XP152A12COMR

XP152A12COMR TUOFENG | Alldatasheet

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www.sztuofeng.com Feb,2018 V1.0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS V(BR)DSS RDS(on)MAX ID -20V 0.300Ω@-4.5V -0.4A 0.500Ω@-2.5V P-Channel20-V D-S MOSFET GeneralFEATURE

• TrenchFETPower MOSFET
• Lead freeproductis acquired
• Surfacemountpackage APPLICATION
• Load SwitchforPortable Devices
• DC/DCConverter SOT-23 MARKING EquivalentCircuit w 1.GATE 2.SOURCE 3.DRAIN *w：week code Maximumratings (Ta=25℃ unless otherwise noted) Parameter S y mbol Value Unit Drain-SourceVoltage VDS -20 V Gate-SourceVoltage VGS ±12 ContinuousDrainCurrent ID -0.4 PulsedDrainCurrent IDM -6.0 A ContinuousSource-DrainDiodeCurrent IS -1.30 MaximumPowerDissipation PD 0.5 W ThermalResistancefromJunctiontoAmbient(t≤5s) R θJA ℃/W JunctionTemperature TJ 150 StorageTemperature Tstg -55 ~+150 250 XP152A12COMR XP152A12COMR 212T

www.sztuofeng.com Feb,2018 V1.0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS MOSFETELECTRICAL CHARACTERISTICS Ta=25℃ unlessotherwisespecified Parameter Symbol TestCondition Min Typ Max Units Static Drain-sourcebreakdownvolta g e V(BR)DSS VGS =0V,ID =-250µA -20 V Gate-sourcethresholdvolta g e VGS(th) VDS =VGS,ID =-250µA -0.5 -0.7 Gate-sourceleakage IGSS VDS =0V,VGS =±10V ±100 nA Zerogatevoltagedraincurrent I DSS VDS =-20V,VGS =0V -1 µA Drain-sourceon-stateresistancea RDS(on) VGS =-4.5V,ID =-0.4A 0.280 0.300 Ω VGS =-2.5V,ID =-0.4A 0.460 0.500 Forwardtransconductancea gfs VDS =-5V,ID =-0.4A 4.0 6.5 S Dynamicb Inputcapacitance Ciss 285 VDS =-10V,VGS =0V,f=1MHz pF Outputcapacitance Coss Reversetransfercapacitance Crss Totalgatecharge Qg VDS =-10V,VGS =-4.5V,ID =-0.4A 5.5 2.9 nC VDS =-10V,VGS =-2.5V,ID =-0.4AGate-sourcecharge Qgs 045 Gate-draincharge Qgd 0.75 Gateresistance Rg f=1MHz 6.0 Ω Turn-ondelaytime td(on) VDD=-10V, 9.8 20 Risetime t r 4.9 60 RL=5Ω,ID =-0.4A, ns Turn-offdela y time td(off) 20.5 50 VGEN=-4.5V,Rg=3Ω Falltime t f 7.0 20 Drain-sourcebodydiodecharacteristics Continuoussource-draindiodecurrent IS TC=25℃ -1.3 A Pulsediodeforwardcurrenta ISM -10 Bod y diodevolta g e V SD IS=-0.4A -0.8 -1.2 V Notes: a.PulseTest:PulseWidth<300µs,DutyCycle≤2%. b.Guaranteedb ydesi gn ,notsub jectto productiontestin g. XP152A12COMR

www.sztuofeng.com Feb,2018 V1.0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS SOT-23PackageOutlineDimensions SOT-23SuggestedPadLayout Symbol DimensionsInMillimeters DimensionsInInches Min Max Min Max A 0.900 1.150 0.035 0.045 0.000 0.100 0.000 0.004 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 2.250 2.550 0.089 0.100 e

0.950 TYP

0.037 TYP

1.800 2.000 0.071 0.079 L

0.550 REF

0.022 REF

0.300 0.500 0.012 0.020 θ 8° 0° XP152A12COMR