TF160P02L TUOFENG | Alldatasheet

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  • Absolute Maximum Ratings （TC =25℃） Parameter Symbol Rating Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current ID@TC=25℃ -6.0 A ID@TC=75℃ -5.0 A ID @TC=100℃ -4.0 A Pulsed Drain Current ① IDM 23 A Total Power Dissipation② PD@TC=25℃ 2.5 W Total Power Dissipation PD@TA=25℃ 0.5 W Operating Junction Temperature T J -55 to 150 ℃ Storage Temperature TSTG -55 to 150 ℃
  • General Description The TF160P02L combines advanced trench MOSFETtechnology with a low resistance package toprovideextremely low RDS(ON).
  • Features Advance high cell density Trench technology Low RDS(ON) to minimize conductive loss Low Gate Charge for fast switching Low Thermal resistance
  • Application MB/VGA Vcore SMPS 2nd Synchronous Rectifier POL application BLDC Motor driver
  • Product Summary VDS=-20V I D=-6.0A RDSON(-4.5V typ)=15.5mΩ RDSON(-2.5V typ)=19.0mΩ Part NO. TF160P02L Marking1 81:TF160P02L; TF:tuofeng Marking2 Y:year code; XX:Week; A:device code; Basic ordering unit (pcs) 3000 TF160P02L Shenzhen Tuofeng Semiconductor Technology Co., Ltd P-CHANNEL ENHANCEMENT MODE POWER MOSFET 1www.sztuofeng.com May 2021 V1.0 DFN2x2-6L 81TF YXXA D G S
  • Thermal resistance Parameter Symbol Min. Typ. Max. Unit Thermal resistance, junction - case② RthJC - - 7 °C/W Thermal resistance, junction - ambient RthJA - - 50 °C/W Soldering temperature, wavesoldering for 8s Tsold - - 265 °C
  • Electronic Characteristics Parameter Symbol Condition Min. Typ Max. Unit Drain-Source Breakdown Voltage BVDSS VGS =0V, ID =-250uA -20 V Gate Threshold Voltage VGS(TH) VGS =V DS, ID =2-50uA -0.45 -0.55 -0.90 V Drain-Source Leakage Current IDSS VDS=-20V, VGS =0V 1.0 uA Gate- Source Leakage Current IGSS VGS=±12V, VDS =0V ±100 nA Static Drain-source On Resistance RDS(ON) VGS=-4.5V, ID=-5.5A 15.5 19.0 mΩ VGS=-2.5V, ID=-4.0A 19.0 23.0 mΩ Forward Transconductance gFS VDS =-10V, ID=-5.5A 10 S Source-drain voltage VSD Is=-5.5A 1.00 V
  • Electronic Characteristics Parameter Symbol Condition Min. Typ Max. Unit Input capacitance Ciss f = 1MHz - 1478 - pF Output capacitance Coss - 127.9 - Reverse transfer capacitance Crss - 136.5 -
  • Gate Charge characteristics(Ta = 25℃) Parameter Symbol Condition Min. Typ Max. Unit Total gate charge Qg VDD =-10V ID = -6A VGS = - 4.5V - 18.7 - nC Gate - Source charge Qgs - 2.64 - Gate - Drain charge Qgd - 4.40 - Note: ① Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% ; ② Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate； Shenzhen Tuofeng Semiconductor Technology Co., Ltd 2www.sztuofeng.com May 2021 V1.0 0.83 TF160P02L P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 3www.sztuofeng.com May 2021 V1.0 TF160P02L P-CHANNEL ENHANCEMENT MODE POWER MOSFET Fig.1 Power Dissipation Derating Curve Fig.2 Typical output Characteristics Fig.3 Threshold Voltage V.S Junction Temperature Fig.4 Resistance V.S Drain Current Fig.5 On-Resistance VS Gate Source Voltage Fig.6 On-Resistance V.S Junction Temperature 0.2 0.4 0.6 0.8 1.2 0 50 100 150 200 Power Dissipation Pd/Pd MAX.% Temperature (。C) 0 0.5 1 1.5 2 Drain Current (A) Drain-Source voltage (V) -0.5 -50 50 150 Vgs(th )d Junction Temperature 0 5 10 15 20 25 ON Resistance Drain Current(A) 4 6 8 10 RDson(mΩ) VGS( -V ) 0.5 1.5 -50 0 50 100 150 Normalized ON-Resistance Temperature VGS=-4.5V VGS=-2.5V

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4www.sztuofeng.com May 2021 V1.0 TF160P02L P-CHANNEL ENHANCEMENT MODE POWER MOSFET Fig.7 Switching Time Measurement Circuit Fig.8 Gate Charge Waveform Fig.9 Switching Time Measurement Circuit Fig.10 Gate Charge Waveform Fig.11 Avalanche Measurement Circuit Fig.12 Avalanche Waveform

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 5www.sztuofeng.com May 2021 V1.0 D E b e L k 0.2 TOP VIEW BOTTOM VIEW A SIDE VIEW Symbol Dimensions in Millimeters Min. Typ. Max. A 0.70 0.75 0.80 0.00 0.02 0.05 0.203Ref. b 0.25 0.30 0.35 D 1.92 2.00 2.07 0.85 0.95 1.05 0.20 0.30 0.40 E 1.92 2.00 2.07 0.70 0.80 0.90 0.70 0.80 0.90 e

0.65 BSC

L 0.30 0.35 0.40 K 0.20 TF160P02L P-CHANNEL ENHANCEMENT MODE POWER MOSFET