TF030N03M TUOFENG | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

  • Package Marking and Ordering Information:
  • Absolute Maximum Ratings（TC =25℃） Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID@TC=25℃ 55 A ID@TC=75℃ 45 A ID@TC=100℃ 35 A Pulsed Drain Current ① IDM 178 A Total Power Dissipation PD@TC=25℃ 30 W Total Power Dissipation PD@TA=25℃ 2.0 W Operating Junction Temperature T J -55 to 150 ℃ Storage Temperature TSTG -55 to 150 ℃ Single Pulse Avalanche Energy EAS 35 mJ
  • General Description The TF030N03M uses advanced trench technology and design to provide excellent RDS(ON) withlowgate charge. It can be used in a wide variety ofapplications.
  • Features Advance device constructure Low RDS(ON) to minimize conduction loss Low Gate Charge for fast switching Low Thermal resistance
  • Application Synchronous Rectification for AC-DC/DC-DC converter Power Tools
  • Product Summary VDS =30V RDS(ON) =3.5mΩ ID =55A Part NO. TF030N03M Marking 030N03M Packing Information Basic ordering unit (pcs) 5000 D G S S GS S D DD D G SS S D DD D TF030N03M Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 1www.sztuofeng.com Feb 2022 V2.0 --- TF 030N03M AYXA
  • Thermal resistance Parameter Symbol Min. Typ. Max. Unit Thermal resistance, junction - case RthJC 6.5 °C/W Thermal resistance, junction - ambient RthJA - - 70 °C/W Soldering temperature, wavesoldering for 8 s Tsold - - 265 °C
  • Electronic Characteristics Parameter Symbol Condition Min. Typ Max. Unit Drain-Source Breakdown Voltage BVDSS VGS =0V,ID =250uA 30 V Gate Threshold Voltage VGS(TH) VGS =V DS, ID =250uA 1.1 2.1 V Drain-Source Leakage Current IDSS VDS=30 VGS =0V 1.0 uA Gate- Source Leakage Current IGSS VGS=± 20V ,VDS =0V ±100 nA Static Drain-source On Resistance RDS(ON) VGS=10V, ID=20A 3.5 5.0 mΩ VGS=4.5V, ID=15A 6.5 mΩ Forward Transconductance gFS VDS =25V, ID=20A 12 Source-drain voltage VSD Is=20A 1.20 V
  • Electronic Characteristics Parameter Symbol Condition Min. Typ Max. Unit Input capacitance Ciss f = 1MHz VDS=15V VGS = 0V - 1847 - pF Output capacitance Coss - 185 - Reverse transfer capacitance Crss - 166 -
  • Gate Charge characteristics(Ta = 25℃) Parameter Symbol Condition Min. Typ Max. Unit Total gate charge Qg VDD = 15V ID = 20A VGS = 10V - 41 - nC Gate - Source charge Qgs - 5.1 - Gate - Drain charge Qgd - 6.4 - Note: ① Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% ; Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 1.5 S - - - - 7.5 TF030N03M 1www.sztuofeng.com Feb 2022 V2.0

Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET Test Circuit 1) E AS test Circuit 2) Gate charge test Circuit 3) Switch Time Test Circuit TF030N03M 1www.sztuofeng.com Feb 2022 V2.0

Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET Min. Max. Min. Max. A 0.650 0.850 0.026 0.033 D 2.900 3.100 0.114 0.122 D1 2.300 2.600 0.091 0.102 E 2.900 3.100 0.114 0.122 E1 3.150 3.450 0.124 0.136 E2 1.535 1.935 0.060 0.076 b 0.200 0.400 0.008 0.016 e 0.550 0.750 0.022 0.030 L 0.300 0.500 0.012 0.020 L1 0.180 0.480 0.007 0.019 H 0.315 0.515 0.012 0.020 θ 9° 13° 9° 13° 0~0.05 0~0.002 Symbol Dimensions In Millimeters Dimensions In Inches 0.152 REF. 0.006 REF. 0~0.100 0~0.004 0~0.100 0~0.004 TF030N03M 1www.sztuofeng.com Feb 2022 V2.0