TF2328 TUOFENG | Alldatasheet

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N-Channel 100-V (D-S) MOSFET /C0080/C0082/C0079/C0068/C0085/C0067/C0084/C0032/C0083/C0085/C0077/C0077/C0065/C0082/C0089 V DS (V) r DS(on) (/C0087) I D (A) 100 0.300 @ V GS = 10 V 1.5 /C0065/C0066/C0083/C0079/C0076/C0085/C0084/C0069/C0032/C0077/C0065/C0088/C0073/C0077/C0085/C0077/C0032/C0082/C0065/C0084/C0073/C0078/C0071/C0083/C0032/C0040/C0084 /C0065 /C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage V DS 100 Gate-Source Voltage V GS /C003420 V /C0095 T A = 25/C0095C 1.5 1.15 Continuous Drain Current J = 150/C0095C) a I D Pulsed Drain Current b I DM A Avalanche Current b I AS Single Avalanche Energy L = 0.1 mH E AS 1.8 mJ Continuous Source Current (Diode Conduction) a I S 0.6 A T A = 25/C0095C 1.25 0.73 Power Dissipation a P D W Operating Junction and Storage Temperature Range T J , T stg –55 to 150 /C0095C /C0084/C0072/C0069/C0082/C0077/C0065/C0076/C0032/C0082/C0069/C0083/C0073/C0083/C0084/C0065/C0078/C0067/C0069/C0032/C0082/C0065/C0084/C0073/C0078/C0071/C0083 Parameter Symbol Typical Maximum Unit t /C0118 5 sec 100 Maximum Junction-to-Ambient a Steady State R thJA 130 170 /C0095C/W Maximum Junction-to-Foot Steady State R thJF C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS SOT-23 MARKING EquivalentCircuit 1.GATE 2.SOURCE 3.DRAIN *w：week code w D82TF GeneralFEATURE APPLICATION

  • Load SwitchforPortable Devices
  • DC/DCConverter
  • TrenchFETPower MOSFET
  • Lead freeproductis acquired
  • Surfacemountpackage TF2328 www.sztuofeng.com Feb,2018 V1.01

/C0083/C0080/C0069/C0067/C0073/C0070/C0073/C0067/C0065/C0084/C0073/C0079/C0078/C0083/C0032/C0040/C0084 /C0065 /C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Limits Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-Source Breakdown Voltage BR)DSS V GS = 0 V, I D = 250uA 100 Gate-Threshold Voltage V GS(th) V DS = V GS , I D = 250 /C0109A 1.3 V Gate-Body Leakage I GSS V DS = 0 V, V GS = /C003420 V /C0034100 nA V DS = 80 V, V GS = 0 V 200 Zero Gate Voltage Drain Current I DSS On-State Drain Current a I D(on) V DS /C0119 15 V, V GS = 10 V A Drain-Source On-Resistance a r DS(on) V GS = 10 V, I D = 1.5 A 0.300 /C0087 Forward Transconductance a g fs V DS = 15 V, I D = 1.5 A S Diode Forward Voltage V SD I S = 1.0 A, V GS = 0 V 0.8 1.2 V Dynamic b Total Gate Charge Q g 3.3 4.0 Gate-Source Charge Q gs V DS = 50 V, V GS = 10 V, I D = 1.5 A 0.47 nC Gate-Drain Charge Q gd 1.45 Switching Turn-On Delay Time t d(on) Rise Time t r V DD = 50 V, R L = 33 /C0087 Turn-Off Delay Time t d(off) V DD = 50 V, R L = 33 /C0087 I D /C0094 0.2 A, V GEN = 10 V, R G = 6 /C0087 ns Fall-Time t f Source-Drain Reverse Recovery Time t rr I F = 1.5 A, di/dt = 100 A//C0109s 100 ns Notes a. Pulse test: PW /C0118300 /C0109s duty cycle /C01182%. b. Guaranteed by design, not subject to production testing. /C0084/C0089/C0080/C0073/C0067/C0065/C0076/C0032/C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083/C0032/C0040/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0078/C0079/C0084/C0069/C0068/C0041 02468 02468 1 0 V GS = 10, 9, 8 V T C = 125/C0095C –55/C0095C 6 V 25/C0095C Output Characteristics Transfer Characteristics V DS – Drain-to-Source Voltage (V) – Drain Current (A)I D V GS – Gate-to-Source Voltage (V) – Drain Current (A)I D 5 V 4 V 7 V 3, 2, 1 V nA 2.5 0.250 TF2328 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS www.sztuofeng.com Feb,2018 V1.02

/C0084/C0089/C0080/C0073/C0067/C0065/C0076/C0032/C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083/C0032/C0040/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0078/C0079/C0084/C0069/C0068/C0041 – On-Resistance (r DS(on) /C0087) 100 150 200 250 0 2 04 06 08 0 1 0 0 0.0 0.5 1.0 1.5 2.0 2.5 –50 –25 0 25 50 75 100 125 150 0123456 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0369 1 2 V DS – Drain-to-Source Voltage (V) C rss C oss C iss V DS = 10 V I D = 1.5 A I D – Drain Current (A) V GS = 10 V I D = 1.5 A V GS = 10 V Gate Charge On-Resistance vs. Drain Current – Gate-to-Source Voltage (V) Q g – Total Gate Charge (nC) C – Capacitance (pF) V GS Capacitance On-Resistance vs. Junction Temperature T J – Junction Temperature (/C0095C) (Normalized) – On-Resistance (r DS(on) /C0087) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 02468 1 0 I D = 1.5 A 0.01 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage – On-Resistance (r DS(on) /C0087) V SD – Source-to-Drain Voltage (V) V GS – Gate-to-Source Voltage (V) – Source Current (A)I S 0.1 T J = 150/C0095C T J = 25/C0095C TF2328 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS www.sztuofeng.com Feb,2018 V1.03

SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS www.sztuofeng.com Feb,2018 V1.04 /C0084/C0089/C0080/C0073/C0067/C0065/C0076/C0032/C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083/C0032/C0040/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0078/C0079/C0084/C0069/C0068/C0041 1 10 60010 100 0.01 100 6000.1 Single Pulse Power Time (sec) Power (W) –1.2 –0.9 –0.6 –0.3 0.0 0.3 0.6 –50 –25 0 25 50 75 100 125 150 I D = 250 /C0109A 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Threshold Voltage Variance (V)V GS(th) T J – Temperature (/C0095C) Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) Normalized Effective Transient Thermal Impedance 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 176/C0095C/W 3. T JM – T A = P DM Z thJA(t) t t t t Notes: 4. Surface Mounted P DM T A = 25/C0095C

www.sztuofeng.com Feb,2018 V1.0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS SOT-23PackageOutlineDimensions SOT-23SuggestedPadLayout Symbol DimensionsInMillimeters DimensionsInInches Min Max Min Max A 0.900 1.150 0.035 0.045 0.000 0.100 0.000 0.004 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 2.250 2.550 0.089 0.100 e

0.950 TYP

0.037 TYP

1.800 2.000 0.071 0.079 L

0.550 REF

0.022 REF

0.300 0.500 0.012 0.020 θ 8° 0° TF2328