TF25115 TUOFENG | Alldatasheet

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Technical content

N-Channel Enhancement Mode Power MOSFET

Description

The TF25115 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. General Features

  • V DS = 25V ,ID = 115A RDS(ON) < 3.0mΩ @ VGS=4.5V RDS(ON) < 4.0mΩ @ VGS=2.5V
  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package Application
  • Battery Switch
  • Load switch
  • Power management Schematic diagram Pin assignment Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 25 V Gate-Source Voltage VGS ±12 V TA =25℃ 115 Continuous Drain Current (TJ =150℃) TA =70℃ ID A Drain Current-Pulsed (Note 1) IDM 180 A Maximum Power Dissipation PD 60 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 2.0 /W℃ SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD PDFN 3333 Plastic-Encapsulate MOSFETS TF25115 TF 25115 CYWP S S S G DDD D Pin 1 PIN1 Top View Bottom View PDFN3333-8L Y :year code W :week code www.sztuofeng.com Jun 2020 V1.0 S D G

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Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS=0V ID=250μA Zero Gate Voltage Drain Current I DSS V DS=25V,VGS=0V - - 1 μA Gate-Body Leakage Current I GSS V GS=±12V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS=VGS,ID=250μ 0.5 VGS=4.5V, ID 2.4 Drain-Source On-State Resistance R DS(ON) VGS=2.5V, ID=20A mΩ Forward Transconductance g FS V DS=5V,ID=20A Dynamic Characteristics (Note4) Input Capacitance C lss Output Capacitance C oss Reverse Transfer Capacitance C rss VDS=15V,VGS=0V, F=1.0MHz Switching Characteristics (Note 4) Turn-on Delay Time t d(on) Turn-on Rise Time t r Turn-Off Delay Time t d(off) Turn-Off Fall Time t f VDD=10V,ID=20A VGS=4.5V,RGEN=3.0Ω Total Gate Charge Q g Gate-Source Charge Q gs Gate-Drain Charge Q gd VDS=10V,ID=20A, VGS=4.5V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS=0V,IS=20A Diode Forward Current (Note 2) I S Reverse Recovery Time trr Reverse Recovery Charge Qrr TJ = 25°C, IF = 20A di/dt = 100A/μs(Note3) Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition：Tj=25℃,VDD=15V,VG=10V,L=0.5mH,Rg=25Ω SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD PDFN 3333 Plastic-Encapsulate MOSFETS =20A 3.0- 3.2 4.0- www.sztuofeng.com Jun 2020 V1.0 A V 0.75 1.2 S- - 20 V- - 1.2 A- - 115 PF- - 3611 PF- - 1865 PF- - 73 nS- - 9 nS- - 35 nS- - 5 nS- - 15 nC- - 5.6 nC- - 6.5 nC- - 28.1 nS- - 24 uC- - 30 TF25115 V- - 25

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SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD PDFN 3333 Plastic-Encapsulate MOSFETS www.sztuofeng.com Jun 2020 V1.0 Figure 1 Output Characteristics Figure 2 Transfer Characteristics Figure 3 On-resistance vs.gate voltage Figure 4 On-resistance vs.drain current Figure 5 Source-to-drain diode forwrd Figure 6 Capacitance vs drain-to-source characteristics Voltage TF25115 0 10 RDS(ON) (mΩ) VGS =4.5V VGS =2.5V 20 30 40

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SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD PDFN 3333 Plastic-Encapsulate MOSFETS www.sztuofeng.com Jun 2020 V1.0 Figure 7 Gate-to-source voltage vs.gate Figure 8 Maximum drain current vs.case charge temperature Figure 9 Maximum drain current vs. ambient temperature TF25115

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SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD PDFN 3333 Plastic-Encapsulate MOSFETS www.sztuofeng.com Jun 2020 V1.0 Resistive switching time test circuit & waveforms Gate charge test circuit & waveforms Peak diode recovery dv/dt circuit & waveforms Unclamped inductive switching test circuit & waveforms TF25115 4.5V 4.5V

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SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD PDFN 3333 Plastic-Encapsulate MOSFETS www.sztuofeng.com Jun 2020 V1.0 TF25115 0.4 0.65 0.721.980.25 0.60 3.55 2.80 ( Only for Reference ) Land Pattern D e M C A E θ b L H MIN NOM MAX MIN NOM MAX MIN NOM MAX MIN NOM MAX SYMBOL MM INCH 0.65BSC 0.026BSC SYMBOL MM INCH