TF25NP03M

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Advance high cell density Trench technology Low RDS(ON) to minimize conductive loss Low Gate Charge for fast switching Dual DIE in one package Application Power Management in Notebook Computer BLDC Motor driver Product Summary TF25NP03M Shenzhen Tuofeng Semiconductor Technology Co., Ltd N + P -CHANNEL ENHANCEMENT MODE POWER MOSFET 1www.sztuofeng.com May 2022 V1.0 V DS 30 -30 V R DS(on)， TYP VGS=±10 V 11 24 mΩ R DS(on)， TYP VGS=±4.5V 15 35 mΩ I D 25 -24 A PDFN3333 Maximum ratings, at TA =25° C, unless otherwise specified Symbol Parameter Rating Unit NMOS PMOS (BR)DSSV Drain-Source breakdown voltage -30 V VGS Gate-Source voltage ±20 ±20 V SI Diode continuous forward current CT =25° C 25 -24 A DI Continuous drain current @VGS=±10V CT =25° C 25 -24 A CT =100°C 16 -15 A DMI Pulse drain current tested ① CT =25° C 75 -72 A IDSM Continuous drain current @VGS=±10V TA=25° C A TA=70°C A EAS Avalanche energy, single pulsed ② 18 24 mJ DP Maximum power dissipation CT =25° C 14 15 W PDSM Maximum power dissipation ③ TA=25° C 2.0 2.0 W STGT , JT Storage and junction temperature range -55 to 150 -55 to 150 °C Thermal Characteristics Symbol Parameter Typical Unit JCR Thermal Resistance, Junction-to-Case 8.2 6.1 ° C/W JAR Thermal Resistance, Junction-to-Ambient 50 ° C/W N-channel P-channel G1 G2 D1 D2 S1 S2 Part NO. TF25NP03M Marking1 25NP03M:TF25NP03M Marking2 TF:tuofeng; AA:device code; Y:year code; X:Week Basic ordering unit (pcs) 5000 TF 25NP03M AYXA

Shenzhen Tuofeng Semiconductor Technology Co., Ltd N + P -CHANNEL ENHANCEMENT MODE POWER MOSFET 2www.sztuofeng.com May 2022 V1.0 N-Channel Electrical Characteristics Symbol Parameter Condition Min Typ Max Unit Static Electrical Characteristics @ TJ = 25° C (unless otherwise stated) (BR)DSSV Drain-Source Breakdown Voltage VGS=0V, ID=250μA 30 -- -- V DSSI Zero Gate Voltage Drain Current(Tj=25℃) VDS=30V,VGS=0V -- -- 1 μA Zero Gate Voltage Drain Current(Tj=125℃) VDS=30V,VGS=0V -- -- 100 μA GSSI Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ± 100 nA GS(TH)V Gate Threshold Voltage VDS=VGS,ID=250μA 1.1 1.5 2.1 V DS(ON)R Drain-Source On-State Resistance ④ VGS=10V, ID=8A -- 11 14 mΩ VGS=4.5V, ID=6A -- 15 19 mΩ Dynamic Electrical Characteristics @ TJ = 25° C (unless otherwise stated) issC Input Capacitance VDS=15V,VGS=0V, f=1MHz -- 630 -- pF ossC Output Capacitance -- 88.7 -- pF rssC Reverse Transfer Capacitance -- 73.5 -- pF gR Gate Resistance f=1MHz -- 3.5 -- Ω gQ Total Gate Charge VDS=15V,ID=8A, VGS=10V -- 15.1 -- nC gsQ Gate Source Charge -- 3.22 -- nC gdQ Gate Drain Charge -- 3.13 -- nC Switching Characteristics d(on)t Turn on Delay Time VDD=15V, ID=8A, RG=3Ω, VGS=10V -- 5 -- ns rt Turn on Rise Time -- 48.6 -- ns d(off)t Turn Off Delay Time - 15.5 -- ns ft Turn Off Fall Time -- 8.97 -- ns Source Drain Diode Characteristics SDV Forward on voltage ISD=8A,VGS=0V -- 0.89 1.2 V rrt Reverse Recovery Time Tj=25℃,Isd=8A, VGS=0V di/dt=100A/μs -- 9.5 -- ns rrQ Reverse Recovery Charge -- 11.8 -- nC NOTE: ① Repetitive rating; pulse width limited by max. junction temperature. ② Limited by TJmax, starting TJ = 25° C, L = 0.5mH, RG = 25Ω, IAS = 6A, VGS =10V. Part not recommended for use above this value ③ The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150° C. ④ Pulse width ≤ 300μs; duty cycle≤ 2%. TF25NP03M

Shenzhen Tuofeng Semiconductor Technology Co., Ltd N + P -CHANNEL ENHANCEMENT MODE POWER MOSFET 3www.sztuofeng.com May 2022 V1.0 P-Channel Electrical Characteristics Symbol Parameter Condition Min Typ Max Unit Static Electrical Characteristics @ TJ = 25° C (unless otherwise stated) (BR)DSSV Drain-Source Breakdown Voltage VGS=0V, ID=-250μA -30 -- -- V DSSI Zero Gate Voltage Drain Current(Tj=25℃) VDS=-30V,VGS=0V -- -- -1 μA Zero Gate Voltage Drain Current(Tj=125℃) VDS=-30V,VGS=0V -- -- -100 μA GSSI Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ± 100 nA GS(TH)V Gate Threshold Voltage VDS=VGS,ID=-250μA -1.2 -1.8 -2.4 V DS(ON)R Drain-Source On-State Resistance ④ VGS=-10V, ID=-8A -- 24 28 mΩ VGS=-4.5V, ID=-6A -- 35 50 mΩ Dynamic Electrical Characteristics @ TJ = 25° C (unless otherwise stated) issC Input Capacitance VDS=-15V,VGS=0V, f=1MHz -- 821.5 -- pF ossC Output Capacitance -- 111.0 -- pF rssC Reverse Transfer Capacitance -- 102.5 -- pF gR Gate Resistance f=1MHz -- 9.5 -- Ω gQ Total Gate Charge VDS=-15V,ID=-8A, VGS=-10V -- 20.9 -- nC gsQ Gate Source Charge -- 3.57 -- nC gdQ Gate Drain Charge -- 3.69 -- nC Switching Characteristics d(on)t Turn on Delay Time VDD=-15V, ID=-8A, RG=3Ω, VGS=-10V -- 6.4 -- ns rt Turn on Rise Time -- 44.5 -- ns d(off)t Turn Off Delay Time - 46.5 -- ns ft Turn Off Fall Time -- 30.8 -- ns Source Drain Diode Characteristics SDV Forward on voltage ISD=-8A,VGS=0V -- -0.88 -1.2 V rrt Reverse Recovery Time Tj=25℃,Isd=-8A, VGS=0V di/dt=-100A/μs -- 12.5 -- ns rrQ Reverse Recovery Charge -- 8.6 -- nC NOTE: ① Repetitive rating; pulse width limited by max. junction temperature. ②Limited by TJmax, starting TJ = 25° C, L = 0.5mH, RG = 25Ω, IAS = -8A, VGS =-10V. Part not recommended for use above this value ③ The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150° C. ④ Pulse width ≤ 300μs; duty cycle≤ 2%. TF25NP03M

Shenzhen Tuofeng Semiconductor Technology Co., Ltd N + P -CHANNEL ENHANCEMENT MODE POWER MOSFET 4www.sztuofeng.com May 2022 V1.0 VDS, Drain -Source Voltage (V) Fig1. Typical Output Characteristics Tj - Junction Temperature (° C) Fig2. VGS(TH) Gate -Source Voltage Vs. Tj Tc, Case Temperature (° C) Fig2. Maximum Drain Current Vs.Case Temperature VGS, Gate -Source Voltage (V) Fig3. Typical Transfer Characteristics Tj - Junction Temperature (° C) Fig4. Normalized On-Resistance Vs. Tj VSD, Source-Drain Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage VDS, Drain -Source Voltage (V) Fig6. Maximum Safe Operating Area ID, Drain-Source Current (A) Normalized On Resistance ISD, Reverse Drain Current (A) ID - Drain Current (A) ID, Drain-Source Current (A) VGS(TH), Gate -Source Voltage (V) N-Channel Typical Characteristics 1.0 1.2 1.4 1.6 1.8 2.0 TF25NP03M

Shenzhen Tuofeng Semiconductor Technology Co., Ltd N + P -CHANNEL ENHANCEMENT MODE POWER MOSFET 5www.sztuofeng.com May 2022 V1.0 VDS , Drain-Source Voltage (V) Fig7. Typical Capacitance Vs.Drain-Source Voltage VSD, Source-Drain Voltage (V) Fig7. Typical Source-Drain Diode Forward Voltage Qg -Total Gate Charge (nC) Fig8. Typical Gate Charge Vs.Gate-Source Voltage Pulse Width (s) Fig 9 .Normalized Maximum Transient Thermal Impedance VGS, Gate-Source Voltage (V) C, Capacitance (pF) ZqJA Normalized Transient Thermal Resistance) Fig10. Unclamped Inductive Test Circuit and waveforms Fig11. Switching Time Test Circuit and waveforms N-Channel Typical Characteristics TF25NP03M

Shenzhen Tuofeng Semiconductor Technology Co., Ltd N + P -CHANNEL ENHANCEMENT MODE POWER MOSFET 6www.sztuofeng.com May 2022 V1.0 -VDS,- Drain -Source Voltage (V) Fig1. Typical Output Characteristics Tj - Junction Temperature (° C) Fig2. -VGS(TH) Gate -Source Voltage Vs. Tj Tc - Case Temperature (° C) Fig2. Maximum Drain Current Vs.Case Temperature -VGS, -Gate -Source Voltage (V) Fig3. Typical Transfer Characteristics Tj - Junction Temperature (° C) Fig4. Normalized On-Resistance Vs. Tj -VSD, -Source-Drain Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage -VDS, -Drain -Source Voltage (V) Fig6. Maximum Safe Operating Area -ID, -Drain-Source Current (A) Normalized On Resistance -ISD, -Reverse Drain Current (A) -ID,- Drain Current (A) -ID, -Drain-Source Current (A) -VGS(TH), Gate -Source Voltage (V) P-Channel Typical Characteristics TF25NP03M

Shenzhen Tuofeng Semiconductor Technology Co., Ltd N + P -CHANNEL ENHANCEMENT MODE POWER MOSFET 7www.sztuofeng.com May 2022 V1.0 -VDS , -Drain-Source Voltage (V) Fig7. Typical Capacitance Vs.Drain-Source Voltage Qg -Total Gate Charge (nC) Fig8. Typical Gate Charge Vs.Gate-Source Voltage Pulse Width (s) Fig9. Normalized Maximum Transient Thermal Impedance -VGS, -Gate-Source Voltage (V) C, Capacitance (pF) ZqJA Normalized Transient Thermal Resistance Fig10. Unclamped Inductive Test Circuit and Waveforms Fig11. Switching Time Test Circuit and waveforms P-Channel Typical Characteristics TF25NP03M

Shenzhen Tuofeng Semiconductor Technology Co., Ltd Dual PDFN3333 Package Outline Data 8www.sztuofeng.com May 2022 V1.0 E b e DE1 c A R D1 E4 0.4 TF25NP03M N + P -CHANNEL ENHANCEMENT MODE POWER MOSFET