TF040N03M TUOFENG | Alldatasheet

Document overview

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Technical content

  • Ordering Information:
  • Absolute Maximum Ratings（TC =25℃）
  • General Description The TF040N03M combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .This device is ideal for load switch and battery protection applications.
  • Features Advance high cell density Trench technology Low RDS(ON) to minimize conductive loss Low Gate Charge for fast switching Low Thermal resistance
  • Application MB/VGA Vcore SMPS 2nd Synchronous Rectifier POL application BLDC Motor driver
  • Product Summary VDS =30V RDSON(10V typ) RDSON(4.5V typ) =7.0mΩ ID=60A =4.3mΩ Part NO. TF040N03M Marking 1 MOQ 5000 TF040N03M Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 1www.sztuofeng.com Feb 2021 V1.0 S GS S D DD D G SS S D DD D D G S TF040N03M TF 040N03M AYXA Marking 2 TF:tuofeng; AA:device code; Y:year code; X:Week Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID@TC=25℃ 60 A ID@TC=75℃ 45 A ID @TC=100℃ 38 A Pulsed Drain Current ① IDM 150 A Total Power Dissipation PD@TC=25℃ 40 W Total Power Dissipation PD@TA=25℃ 2.0 W Operating Junction Temperature T J -55 to 150 ℃ Storage Temperature TSTG -55 to 150 ℃ Note: ① Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% ;

Single Pulse Avalanche Energy EAS 230 mJ Avalanche Current IAS IAR 30 A

  • Thermal resistance Parameter Symbol Min. Typ. Max. Unit Thermal resistance, junction - case RthJC - - 3.2 °C/W Thermal resistance, junction - ambient RthJA - - 57 °C/W Soldering temperature, wave soldering for 8s Tsold - - 265 °C
  • Electronic Characteristics Parameter Symbol Condition Min. Typ Max. Unit Drain-Source Breakdown Voltage BVDSS VGS =0V,ID =250uA 30 V Gate Threshold Voltage VGS(TH) VGS =V DS, ID =250uA 1.0 2.5 V Drain-Source Leakage Current IDSS VDS=30V, VGS =0V 1.0 uA Gate- Source Leakage Current IGSS VGS=± 20V ,VDS =0V ±100 nA Static Drain-source On Resistance RDS(ON) VGS=10V, ID=20A 4.3 5.5 mΩ VGS=4.5V, ID=20A 7.0 9.0 mΩ Forward Transconductance gFS VDS =25V, ID=10A 18 S Source-drain voltage VSD Is=20A 1.20 V
  • Electronic Characteristics Parameter Symbol Condition Min. Typ Max. Unit Input capacitance Ciss Vds=15V,Vgs=0V f = 1MHz - 1784 - pF Output capacitance Coss - 266 - Reverse transfer capacitance Crss - 212 - ⚫Gate Charge characteristics(Ta = 25℃) Parameter Symbol Condition Min. Typ Max. Unit Gate Risistance Rg f = 1MHz 1.5 Ω Total gate charge Qg VDD = 15V ID = 20A VGS = 10V - 38 - nC Gate - Source charge Qgs - 5.8 - Gate - Drain charge Qgd - 7.9 - TF040N03M Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET Turn-ON Delay time tD(on) VGS=10V ,VDS=10V RG =6.0Ω, I=20A 7 ns Turn-ON Rise time tr 6 ns Turn-Off Delay time tD(off) 30 ns Turn-Off Fall time tf 8 ns 2www.sztuofeng.com Feb 2021 V1.0 1.5

Fig.1 Power Dissipation Fig.2 Typical output Characteristics Fig.3 Threshold Voltage V.S Junction Temperature Fig.4 Resistance V.S Drain Current Fig.5 On-Resistance VS Gate Source Voltage Fig.6 On-Resistance V.S Junction Temperature 0.2 0.4 0.6 0.8 1.2 0 50 100 150 200 Power Dissipation Pd/Pd MAX.% Temperature (。C) 0.5 1.5 2.5 -50 50 150 Vgs(th ) Junction Temperature 0 30 Drain Current(A) ON Resistance 2 4 6 8 10 RDson(mΩ) VGS( V ) 0.3 0.6 0.9 1.2 1.5 -50 0 50 100 150 Normalized ON-Resistance Temperature TF040N03M Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 3www.sztuofeng.com Feb 2021 V1.0 100 200 300 0 0.5 1 1.5 2 Drain Current (A) Drain-Source voltage (V) VGS=10V VGS=4.5V

Fig.7 Switching Time Measurement Circuit Fig.8 Gate Charge Waveform Fig.9 Switching Time Measurement Circuit Fig.10 Gate Charge Waveform Fig.11 Avalanche Measurement Circuit Fig.12 Avalanche Waveform TF040N03M Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 4www.sztuofeng.com Feb 2021 V1.0

Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 5www.sztuofeng.com Feb 2021 V1.0 Min. Max. Min. Max. A 0.650 0.850 0.026 0.033 D 2.900 3.100 0.114 0.122 D1 2.300 2.600 0.091 0.102 E 2.900 3.100 0.114 0.122 E1 3.150 3.450 0.124 0.136 E2 1.535 1.935 0.060 0.076 b 0.200 0.400 0.008 0.016 e 0.550 0.750 0.022 0.030 L 0.300 0.500 0.012 0.020 L1 0.180 0.480 0.007 0.019 H 0.315 0.515 0.012 0.020 θ 9° 13° 9° 13° 0~0.05 0~0.002 Symbol Dimensions In Millimeters Dimensions In Inches 0.152 REF. 0.006 REF. 0~0.100 0~0.004 0~0.100 0~0.004