XP151A13AOMR TUOFENG | Alldatasheet
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www.sztuofeng.com Feb,2018 V1.0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS V(BR)DSS RDS(on)MAX ID 20V 0.100Ω@-4.5V 0.5A 0.150Ω@-2.5V N-Channel 20-V D-S MOSFET GeneralFEATURE APPLICATION
- Load SwitchforPortable Devices
- DC/DCConverter SOT-23 MARKING EquivalentCircuit 1.GATE 2.SOURCE 3.DRAIN *w：week code Maximumratings (Ta=25℃ unless otherwise noted) Parameter S y mbol Value Unit Drain-SourceVoltage VDS V Gate-SourceVoltage VGS ±12 ContinuousDrainCurrent ID 0.5 PulsedDrainCurrent*1 IDM 4.0 A ContinuousSource-DrainDiodeCurrent IS 1.0 MaximumPowerDissipation PD 0.5 W ThermalResistancefromJunctiontoAmbient(t≤5s) R θJA 250 ℃/W JunctionTemperature TJ 150 StorageTemperature Tstg -55 ~+150 Note: *1.PulseWidth≤300μs,Duty cycle≤2% w
- TrenchFETPower MOSFET
- Lead freeproductis acquired
- Surfacemountpackage XP151A13AOMR 113T XP151A13AOMR
www.sztuofeng.com Feb,2018 V1.0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS MOSFETELECTRICAL CHARACTERISTICS Ta=25℃ unlessotherwisespecified Parameter Symbol TestCondition Min Typ Max Units Static Drain-sourcebreakdownvolta g e V(BR)DSS VGS =0V,ID =-250µA 20 V Gate-sourcethresholdvolta g e VGS(th) VDS =VGS,ID =-250µA 0.5 0.8 1.0 Gate-sourceleakage IGSS VDS =0V,VGS =±12V ±100 nA Zerogatevoltagedraincurrent I DSS VDS =16V,VGS =0V 1 µA Drain-sourceon-stateresistancea RDS(on) VGS =4.5V,ID =0.5A 0.085 0.100 Ω VGS =2.5V,ID =0.5A 0.135 0.150 Forwardtransconductancea g fs VDS =5V,ID =0.5A 8.0 S Dynamicb Inputcapacitance Ciss 300 VDS =10V,VGS =0V,f=1MHz pF Outputcapacitance Coss 120 Reversetransfercapacitance Crss Totalgatecharge Qg 4 nCVDS =10V,VGS =4.5V,ID =0.5AGate-sourcecharge Gate-drainchar g e Turn-ondelaytime td(on) VDD=10V,ID =0.5A 15.0 Risetime t r 85.0 VGEN=4.5V,R g =6Ω ns Turn-offdelaytime td(off) 45.0 Falltime t f 20.0 Drain-sourcebodydiodecharacteristics Continuoussource-draindiodecurrent IS TC=25℃ 1.0 A Bod y diodevolta g e V SD IS=1.0A 0.7 1.3 V Notes: a.PulseTest:PulseWidth<300µs,DutyCycle≤2%. b.Guaranteedbydesign, notsubjecttoproductiontesting. Qgs Qgd 1.6 XP151A13AOMR
www.sztuofeng.com Feb,2018 V1.0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS SOT-23PackageOutlineDimensions SOT-23SuggestedPadLayout Symbol DimensionsInMillimeters DimensionsInInches Min Max Min Max A 0.900 1.150 0.035 0.045 0.000 0.100 0.000 0.004 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 2.250 2.550 0.089 0.100 e
0.950 TYP
0.037 TYP
1.800 2.000 0.071 0.079 L
0.550 REF
0.022 REF
0.300 0.500 0.012 0.020 θ 8° 0° XP151A13AOMR