TF15N06

TF15N06 TUOFENG | Alldatasheet

Document overview

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Technical content

Description

The TF15N06 TO-252 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features

• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage and current
• Excellent package for good heat dissipation Application
• Power switching application
• Hard switched and high frequency circuits
• Uninterruptible power supply Absolute Maximum Ratings (TA =25℃℃ ℃℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM 25 Maximum Power Dissipation PD 20 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 41.7 /W℃ Electrical Characteristics (TA =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V ID =250µA 65 - V Zero Gate Voltage Drain Current I DSS V DS =50V, VGS A 500 n =0V - - VDSS RDS(ON) @10V (typ) ID 60V 35 Ω 15A m 15 A TF15N06 Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET www.sztuo eng.com Fe ,2018 V1.11 A D G S TO -252 15N06 TFYWCP MARKING EquivalentCircuit Y :year code W :week code G S D

Gate-Body Leakage Current I GSS V GS =±20V,VDS On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS =VGS ,ID =250µ Drain-Source On-State Resistance R DS(ON) Ω Forward Transconductance g FS V DS =5V,ID =5.0A Dynamic Characteristics (Note4) Input Capacitance C lss 1165 - PF Output Capacitance C oss 56 - PF Reverse Transfer Capacitance C rss VDS =25V,VGS =0V, F=1.0MHz Switching Characteristics (Note 4) Turn-on Delay Time t d(on) Turn-on Rise Time t r 5.2 Turn-Off Delay Time t d(off) Turn-Off Fall Time t f VDD =20V,ID =1.0A VGS =10V,RG =6.0Ω Total Gate Charge Q g 11 nC Gate-Source Charge Q gs Gate-Drain Charge Q gd VDS =20V,ID =5A, VGS =10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,IS=3A - - 1.2 V Diode Forward Current (Note 2) I S Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production m A 1 1.45 2.0 V =0V - - ±100 nA - - 10 A VGS=10V, ID=8A 35 50 VGS=4.5V, ID=8A 40 60 Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET www.sztuo eng.com Fe ,2018 V1.12 S 10 - PF - nS 18 - nS 6.0 - nS - 11.7 - nS - - - 2.2 nC - - 4.2 nC - - TF15N06

Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET www.sztuo eng.com Fe ,2018 V1.13 Typical Characteristics Typical Output Characteristics 0246 8 Brekdown Voltage vs Ambient Temperature 100 -100 -50 0 50 100 150 200 Tj, Junction Temperature(°C) BVDSS, Drain-Source Breakdown Voltage(V) ID=250μA, VGS=0V 10V, 9V, 8V, 7V,6V,5V VDS, Drain-Source Voltage(V) ID, Drain Current (A) VGS=4V V =3VGS Static Drain-Source On-State resistance vs Drain Current 100 1000 10000 0.01 0.1 1 10 100 ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=3V VGS=2.5V VGS=10V VGS=4.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 02468 1 IDR, Reverse Drain Current(A) VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 120 160 200 240 280 320 360 400 02468 1 0 Drain-Source On-State Resistance vs Junction Tempearture 100 -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=5V, ID=8A VGS=10V, ID=8A VGS, Gate-Source Voltage(V) RDS(on), Static Drain-Source On- State Resistance(mΩ) ID=8A ID=8A TF15N06

Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET www.sztuo eng.com Fe ,2018 V1.14 Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture 1.2 1.4 1.6 1.8 2.2 2.4 -60 -20 20 60 100 140 Tj, Junction Temperature(°C) VGS(th), Threshold Voltage(V) ID=250μA Capacitance vs Drain-to-Source Voltage 100 1000 10000 0.1 1 10 100 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Forward Transfer Admittance vs Drain Current 0.1 100 0.01 0.1 1 10 100 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) VDS=5V Pulsed Ta=25°C Gate Charge Characteristics 048 1 2 1 Qg, Total Gate Charge(nC) VGS, Gate-Source Voltage(V) ID=10A VDS=20V VDS=50V Maximum Safe Operating Area 0.01 0.1 100 0.1 1 10 100 VDS, Drain-Source Voltage(V) ID, Drain Current (A)TC=25°C, Tj=150°C VGS=10V Single Pulse DC 100ms 10ms 1ms RDSON Limited 100 μs 10μs Maximum Drain Current vs Case Temperature 25 50 75 100 125 150 175 TC, Case Temperature(°C) ID, Maximum Drain Current(A)VGS=10V TF15N06

Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET www.sztuo eng.com Fe ,2018 V1.15 Typical Characteristics(Cont.) Typical Transfer Characteristics 02468 1 0 1 2 VGS, Gate-Source Voltage(V) ID, Drain Current(A) VDS=5V Transient Thermal Response Curves 0.01 0.1 t1, Square Wave Pulse Duration(s) ZθJC(t), Thermal Response Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.ZθJC(t)=6.25°C/W max. 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*ZθJC(t) TF15N06

Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET www.sztuo eng.com Fe ,2018 V1.16

Package Information

UNIT: mm 0.25 GAUGE PLANE L VIEW A SEATING PLANE L4 L3D E e H A SEE VIEW A b c SYMBOL MIN. MAX. 2.39 4.95 5.46 0.46 0.61 0.13 5.33 A c D E MILLIMETERS b 0.50 0.89

2.29 BSC

4.57 6.35 6.73 6.22

0.090 BSC

MIN. MAX. INCHES 0.094 0.020 0.035 0.195 0.215 0.018 0.024 0.210 0.180 0.250 0.265 2.18 0.245 0.086 0.005 0.035 0.070 0.410 H L e 9.40 0.90 0.46 0.89 1.78 10.41 0.370 0.035 0.018 0.040L4 1.02 0.1503.81 0.89 2.03 0.035 0.080 0 8°0° 8°0° 6.00 6.00 0.236 0.236 6.8 MIN. 3 MIN. 6.25 MIN. 6.6 1.5 MIN. 2.286 4.572 TF15N06