UMN1N SXSEMI | Alldatasheet
Document overview
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Technical content
FEATURES
l Multiple Diodes inOneSmallSurfaceMount Package l DiodeCharacteristicsareMatched inthe Package
APPLICATIONS
MARKING: N1 MAXIMUM RATINGS(Ta=25℃ unlessotherwisenoted) Symbol Parameter Value Unit VR Continuous ReverseVoltage 80 V IO Continuous ForwardCurrent 25 mA IFM Peak ForwardCurrent 80 mA IFSM Non-repetitive Peak Forward Surge Current@t= 8.3ms 0.25 A PD Power Dissipation 150 mW RθJA Thermal Resistance FromJunctionToAmbient 833 ℃/W TJ ,Tstg OperationJunction and Storage Temperature Range -55~+150 ℃ ELECTRICAL CHARACTERISTICS(Ta=25℃ unlessotherwisespecified) Parameter Symbol Test conditions Min Typ Max Unit Reversevoltage V(BR) IR=100μA 80 V Reversecurrent IR VR=70V 0.1 μA Forwardvoltage VF IF=5mA 0.9 V Totalcapacitance Ctot VR=6V,f=1MHz 3.5 pF Reverserecoverytime trr IF= IR=5mA,VR=6V, RL=50Ω 4 ns SOT-353 UMN1N 1 www.sxsemi.com 2 3
Ta=100℃ Ta=25℃ FORWARD VOLTAGE VF (V) REVERSE VOLTAGE VR (V) CapacitanceCharacteristics Ta=25℃ f=1MHz 0 4 8 12 16 20 REVERSE VOLTAGE VR (V) P o w e r D e r a t i n g C u r v e 25 50 75 (℃) ForwardCharacteristics AMBIENT TEMPERATURE Ta=100℃ Ta=25℃ 100 T a 10000 1000 200 100 150 150125 100 0.1 SWITCHINGDIODE UMN1N 2 www.sxsemi.com
SOT-353 PackageOutline Dimensions Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.150 0.350 0.006 0.014 c 0.100 0.150 0.004 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.400 0.085 0.094 e 0.650 TYP 0.026 TYP e1 1.200 1.400 0.047 0.055 L 0.525 REF 0.021 REF L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° SOT-353Suggested Pad Layout SWITCHINGDIODE UMN1N 3 www.sxsemi.com