BAS20 SXSEMI | Alldatasheet
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Technical content
MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Limit Unit VRRM Repetitive Peak Reverse Voltage 200 V VRWM Working Peak ReverseVoltage 150 V IO Average RectifiedOutput Current 200 mA IFSM Non-Repetitive Peak Forward Surge Current @t=8.3ms 2.5 A Pd Power Dissipation 250 mW RθJA Thermal Resistance from Junction toAmbient 500 ℃/W TJ,Tstg Operation Junction and StorageTemperature Range -55 ~ +150 ℃ ELECTRICAL CHARACTERISTICS(TA =25。Cunlessotherwisespecified) Parameter Symbol Test Condition Min Typ Max Unit Reverse breakdown voltage V(BR) IR=100μA 200 V Reverse current IR VR=150V 0.1 μA Forward voltage VF IF=100mA 1 V IF=200mA 1.25 V Diodes capacitance CD VR=0V, f=1MHz 5 pF Reveres recovery time trr IF=IR=30mA,Irr=0.1*IR 50 ns FEATURE FastSwitching Speed Surface Mount Package IdeallySuitedforAutomatic Insertion ForGeneral PurposeSwitchingApplications HighConductance MARKING:JR SWITCHING DIODE 1 www.sxsemi.com BAS20
T =100 C FORWARDVOLTAGE VF (V) Capacitance Characteristics H z 0 4 8 12 16 20 REVERSEVOLTAGE VR (V) Pulsed 0 40 80 120 160 200 REVERSEVOLTAGE VR (V) AMBIENTTEMPERATURE Ta (℃) Power Derating Curve 0 25 50 75 100 125 150 Reverse Characteristics 1000 1000 0.01 250 200 300 150 100 100 100 0.6 0.8 0.1 1.6 1.0 1.4 1.2 f=1M T =25 a Pulsed T 25 C SWITCHING DIODE BAS20 2 www.sxsemi.com
SOT-23 package OutIine Dimensions Symbol DimensionsInMillimeters DimensionsInInches Min Max Min Max A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e 0.950TYP 0.037TYP e1 1.800 2.000 0.071 0.079 L 0.550REF 0.022REF L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8° SOT-23 Suggested pad Layout SWITCHING DIODE BAS20 3 www.sxsemi.com