MMSD914 SXSEMI | Alldatasheet
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Technical content
FEATURES
HighVoltage MARKING:5D MAXIMUM RATINGS(Ta=25℃ unlessotherwisenoted) Symbol Parameter Value Unit VRRM Maximum Repetitive ReverseVoltage 100 V IO ForwardCurrent 0.2 A IFSM Non-repetitivePeak ForwardSurgeCurrent @t=8.3ms 2 PD Power Dissipation 400 mW RθJA Thermal ResistancefromJunctiontoAmbient 312 ℃/W Tj ,Tstg Operation Junction and Storage Temperature Range -55~+150 ℃ ELECTRICAL CHARACTERISTICS(Ta=25℃ unlessotherwisespecified) Parameter Symbol Test conditions Min Typ Max Unit Reversevoltage V(BR) IR=100μA 100 V Reversecurrent IR VR=20V 25 nA VR=75V 5 μA Forwardvoltage VF IF=10mA 1 V Totalcapacitance Ctot VR=0V,f=1MHz 4 pF Reverserecoverytime trr IF= IR=10mA, Irr=0.1×IR, RL=100Ω 4 ns SOD-123 MMSD914 1 www.sxsemi.com
F o r w a r d C h a r a c t e r i s t i c s FORWARD VOLTAGE VF (V) 10000 3000 1000 300 100 R e v e r s e C h a r a c t e r i s t i c s 0 20 40 60 80 100 REVERSEVOLTAGE VR (V) C a p a c i t a n c e C h a r a c t e r i s t i c s R E V E R S E V O L T A G E V R V P o w e r D e r a t i n g C u r v e 0 25 50 75 100 125 150 AMBIENTTEMPERATURE Ta (℃) 400 200 300 300 500 100 100 0.3 0.1 1.6 Ta= f=1 25℃ MHz Ta=100℃ Ta =25℃ SMALLSIGNALDIODE MMSD914 2 www.sxsemi.com
SOD-123 PackageOutline Dimensions Symbol DimensionsIn Millimeters DimensionsIn Inches Min Max Min Max A 1.050 1.250 0.041 0.049 A1 0.000 0.100 0.000 0.004 A2 1.050 1.150 0.041 0.045 b 0.450 0.650 0.018 0.026 c 0.080 0.150 0.003 0.006 D 1.500 1.700 0.059 0.067 E 2.600 2.800 0.102 0.110 E1 3.550 3.850 0.140 0.152 L 0.500 REF 0.020 REF L1 0.250 0.450 0.010 0.018 θ 0° 8° 0° 8° SOD-123Suggested Pad Layout SMALLSIGNALDIODE MMSD914 3 www.sxsemi.com