BAS316 SXSEMI | Alldatasheet
Document overview
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Technical content
MARKING:A6 MAXIMUM RATINGS(Ta=25℃ unlessotherwisenoted) Symbol Parameter Value Unit VRRM Peak Repetitive ReverseVoltage 85 V VR DC BlockingVoltage Continuous ForwardCurrent IO 250 mA IFSM Non-repetitive Peak Forward SurgeCurrent@t= 8.3ms Power Dissipation Thermal Resistance from Junction toAmbient Operation Junction and Storage Temperature Range 2.0 A PD 250 mW RθJA 500 ℃/W TJ,Tstg -55~+150 ℃ ELECTRICAL CHARACTERISTICS(Ta=25℃ unlessotherwisespecified) Parameter Symbol Test conditions Min Typ Max Unit Reversevoltage V(BR) IR=100μA 100 V Reversecurrent IR VR=25V 30 nA VR=75V 1 μA Forwardvoltage VF IF=1mA 0.715 VIF=10mA 0.855 IF=50mA 1 IF=150mA 1.25 Totalcapacitance Ctot VR=0V,f=1MHz 1.5 pF Reverserecoverytime trr IF= IR=10mA, Irr=0.1×IR 4 ns
FEATURES
VerySmall Plastic Package HighSwitching Speed
APPLICATIONS
High-SpeedSwitching ine.g.SurfaceMountedCircuits SWITCHINGDIODE BAS316 1 www.sxsemi.com
T =100℃ a =25℃ a 0 20 40 60 80 REVERSE VOLTAGE VR (V) CapacitanceCharacteristics T a =25℃ 1MHz 0 5 10 15 20 REVERSE VOLTAGE VR (V) P o w e r D e r a t i n g C u r v e 25 50 75 AMBIENT TEMPERATURE FORWARD VOLTAGE VF (V) Forward Characteristics 250 100 100 T a (℃) 10000 1000 0.01 250 200 300 150125 100 150 100 0.1 T SWITCHINGDIODE BAS316 2 www.sxsemi.com
1.100 0.000 0.100 0.800 1.000 0.250 0.350 0.080 0.150 1.200 1.400 1.600 1.800 2.500 2.750 0.475REF 0.250 0.400 0° 8° DimensionsInInches Min Max 0.043 0.000 0.004 0.031 0.039 0.010 0.014 0.003 0.006 0.047 0.055 0.063 0.071 0.098 0.108 0.019REF 0.010 0.016 0° 8° Symbol A b c D E L θ SWITCHINGDIODE BAS316 3 www.sxsemi.com