MMDL914 SXSEMI | Alldatasheet
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Technical content
FEATURES
HighVoltage MARKING:5D MAXIMUM RATINGS(Ta=25℃ unlessotherwisenoted) Symbol Parameter Value Unit VRRM Maximum Repetitive ReverseVoltage 100 V IO ForwardCurrent 0.2 A IFSM Non-repetitivePeak ForwardSurgeCurrent @t=8.3ms 2 PD Power Dissipation 200 mW RθJA Thermal ResistancefromJunctiontoAmbient 500 ℃/W TJ,Tstg Operation Junction and Storage Temperature Range -55~+150 ℃ ELECTRICAL CHARACTERISTICS(Ta=25℃ unlessotherwisespecified) Parameter Symbol Test conditions Min Typ Max Unit Reversevoltage V(BR) IR=100μA 100 V Reversecurrent IR VR=20V 25 nA VR=75V 5 μA Forwardvoltage VF IF=10mA 1 V Totalcapacitance Ctot VR=0V,f=1MHz 4 pF Reverserecoverytime trr IF= IR=10mA, Irr=0.1×IR, RL=100Ω 4 ns SOD-323 MMDL914 1 www.sxsemi.com
Ta=100℃ Ta=25℃ 0 20 40 60 80 100 REVERSE VOLTAGE VR (V) C a p a c i t a n c e C h a r a c t e r i s t i c s R E V E R S E V O L T A G E V R V P o w e r D e r a t i n g C u r v e 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta (℃) FORWARD VOLTAGE VF (V) Forward Characteristics 10000 3000 1000 250 200 300 300 100 100 150 100 0.3 0.1 1.6 Ta= f=1 25℃ MHz SMALLSIGNALDIODE MMDL914 2 www.sxsemi.com
1.100 0.000 0.100 0.800 1.000 0.250 0.350 0.080 0.150 1.200 1.400 1.600 1.800 2.500 2.750 0.475REF 0.250 0.400 0° 8° DimensionsInInches Min Max 0.043 0.000 0.004 0.031 0.039 0.010 0.014 0.003 0.006 0.047 0.055 0.063 0.071 0.098 0.108 0.019REF 0.010 0.016 0° 8° Symbol A b c D E L θ SMALLSIGNALDIODE MMDL914 3 www.sxsemi.com