BAS516 SXSEMI | Alldatasheet
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Technical content
FEATURES
l Surface Mount Package IdeallySuitedforAutomatic Insertion MARKING:61 MAXIMUM RATINGS( Ta=25℃ unlessotherwise noted ) Symbol Parameter Value Unit VRM Non-Repetitive Peak ReverseVoltage 100 V VRRM Peak Repetitive ReverseVoltage 75 V VRWM Working Peak ReverseVoltage VR(RMS) RMS ReverseVoltage 53 V IO Average RectifiedOutputCurrent 250 mA IFSM Non-repetitive Peak Forward Surge Current @t=8.3ms 2.0 A PD PowerDissipation 150 mW RΘJA Thermal Resistance from Junction to Ambient 833 ℃/W TJ,Tstg OperationJunction and Storage Temperature Range -55~+150 ℃ ELECTRICAL CHARACTERISTICS(Ta=25℃ unlessotherwisespecified) Parameter Symbol Testconditions Min Typ Max Unit Reversevoltage V(BR) IR=100μA 75 V Reversecurrent IR VR=25V 30 nA VR=75V 1 μA Forwardvoltage VF IF=1mA 0.715 V IF=10mA 0.855 V IF=50mA 1 V IF=150mA 1.25 V Totalcapacitance Ctot VR=0V,f=1MHz 1 pF Reverse recoverytime trr IF= IR =10mA, Irr=0.1*IR,RL=100Ω 4 ns SOD-523 BAS516 1 www.sxsemi.com
2 www.sxsemi.com 0 25 50 75 100 125 150 100 150 200 0.01 0.1 100 02 5 5 0 7 5 100 1000 10000 0 5 10 15 20 0.7 0.8 0.9 1.0 1.1 Forward Characteristics Reverse Characteristics Power Derating Curve POWER DISSIPATION P D (mW) AMBIENT TEMPERATURE T a ( ) T a =100 T a =25 FORWARD CURRENT I F (mA) FORWARD VOLTAGE V F (V) 250 T a =100 T a =25 REVERSE CURRENT I R (nA) REVERSE VOLTAGE V R (V) T a =25 f=1MHz Capacitance Characteristics REVERSE VOLTAGE V R (V) CAPACITANCE BETWEEN TERMINALS C T (pF)
SOD-523 PackageOutline Dimensions symboI DimensionsIn MiIIimeters Dimensions In Inches Min Max Min Max A 0.510 0.770 0.020 0.031 A1 0.500 0.700 0.020 0.028 b 0.250 0.350 0.010 0.014 c 0.080 0.150 0.003 0.006 D 0.750 0.850 0.030 0.033 E 1.100 1.300 0.043 0.051 E1 1.500 1.700 0.059 0.067 E2 0.200 REF 0.008 REF L 0.010 0.070 0.001 0.003 θ 7° REF 7° REF SOD-523Suggested Pad Layout FASTSWITCHING DIODE BAS516 3 www.sxsemi.com