BAS21 SXSEMI | Alldatasheet
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Technical content
MARKING:JS Maximum Ratings @Ta=25℃ Parameter Symbol Limit Unit Repetitive peak reverse voltage VRRM Working peak reverse voltage VRWM 250 V DC blocking voltage VR Forward continuous current IFM 400 mA Average rectified output current IO 200 mA Non-Repetitive PeakForwardSurgeCurrent@t=8.3ms IFSM 2.5 A Repetitive peak forward surge current IFRM 625 mA Powerdissipation PD 225 mW Thermal resistance junction to ambient RθJA 555 ℃/W Operation Junction and Storage Temperature Range TJ,TSTG -55~+150 ℃ ELECTRICAL CHARACTERISTICS(Ta=25℃ unlessotherwisespecified) Parameter Min Max Unit Reverse breakdown voltage 250 V Reverse voltage leakage current 0.1 µA Forward voltage 1000 1250 mV Diode capacitance 5 pF Reveres recovery time 50 ns SOT-23
FEATURES
FastSwitchingSpeed Surface Mount Package IdeallySuitedforAutomatic Insertion ForGeneral PurposeSwitchingApplications HighConductance BAS21 1 www.sxsemi.com
FORWARDVOLTAGE VF (V) Capacitance Characteristics f=1 z 0 4 8 12 16 20 REVERSEVOLTAGE VR (V) 0 40 80 120 160 200 REVERSEVOLTAGE VR (V) AMBIENTTEMPERATURE Ta (℃) Power Derating Curve 0 25 50 75 100 125 150 Reverse Characteristics 1000 1000 0.01 250 200 300 100 150 100 100 0.8 0.6 0.1 1.0 1.6 1.2 1.4 T =25 a T 25 C T =100 C SWITCHING DIODE BAS21 2 www.sxsemi.com
SOT-23 PackageOutline Dimensions Symbol DimensionsInMillimeters DimensionsInInches Min Max Min Max A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e 0.950TYP 0.037TYP e1 1.800 2.000 0.071 0.079 L 0.550REF 0.022REF L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8° SOT-23Suggested Pad Layout SWITCHING DIODE BAS21 3 www.sxsemi.com