CMSD2004S SXSEMI | Alldatasheet

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CMSD2004S type is a silicon switching dual in series diode manufactured by the epitaxial planar process, designed for applications requiring high voltage capability. Power dissipation MARKING : B6D Maximum Ratings @Ta=25℃ Parameter Symbol Limit Unit Non-Repetitive Peak reverse voltage VRM 300 V DC Blocking Voltage VR 240 V Average Rectified Output Current IO 200 mA Continuous Forward Current IF 225 mA Peak Repetitive ForwardCurrent IFRM 625 mA Non-Repetitive PeakForwardSurgeCurrent@t=8.3ms IFSM 2.5 A PowerDissipation PD 250 mW Thermal Resistance From Junction to Ambient RθJA 500 ℃/W Operation Junction and Storage Temperature Range TJ,TSTG -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Reverse breakdown voltage V(BR) IR= 100μA 240 V Reverse voltage leakage current IR VR=240V 0.1 mA Forward voltage VF IF=100mA 1 V Diode capacitance CD VR=0V,f=1MHz 5 pF Reveres recovery time trr IF=IR=30mA,RL=100Ω 50 ns SOT-323 1 www.sxsemi.com CMSD2004S

Forward Characteristics Reverse Characteristics FORWARD VOLTAGE VF (V) CapacitanceCharacteristicsPerDiode =25 a f=1 MHz 0 4 8 12 16 20 REVERSE VOLTAGE VR (V) 1 10 REVERSE VOLTAGE VR (V) PowerDeratingCurve AMBIENT TEMPERATURE 25 50 75 100 T a 250 200 (℃) 1000 0.01 250 200 300 100 150125 100 150 100 100 0.1 0.1 0.1 0.1 T Ta=25℃ Ta=100℃ SWITCHING DIODE CMSD2004S 2 www.sxsemi.com

SOT-323 PackageOutline Dimensions Symbol DimensionsIn Millimeters Dimensions InInches Min Max Min Max A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.200 0.400 0.008 0.016 c 0.080 0.150 0.003 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.450 0.085 0.096 e 0.650TYP 0.026TYP e1 1.200 1.400 0.047 0.055 L 0.525 REF 0.021 REF L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° SOT-323Suggested Pad Layout SWITCHING DIODE CMSD2004S 3 www.sxsemi.com