BAS20W SXSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 3
Technical content
FEATURES
l Surface Mount Package IdeallySuitedforAutomatic Insertion l For General Purpose SwitchingApplications l HighConductance MARKING:KT2 Maximum Ratings@Ta=25℃ Parameter Symbol Limit Unit Peak Repetitive ReverseVoltage DC BlockingVoltage VRRM VR 150 V Average RectifiedOutputCurrent IO 200 mA Non-Repetitive Peak Forward Surge Current @t=8.3ms IFSM 2.5 A PowerDissipation PD 200 mW Thermal ResistancefromJunctiontoAmbient RθJA 625 ℃/W OperationJunction and StorageTemperature Range TJ,TSTG -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Reverse breakdownvoltage V(BR) IR= 100µA 150 V Reverse voltage leakage current IR VR=150V 0.1 µA Forward voltage VF IF=100mA IF=200mA 1.25 V Diode capacitance CD VR=0V, f=1MHz 5 pF Reveres recovery time trr IF=IR=30mA,Irr=0.1×IR 50 ns SOT-323 BAS20W 1 www.sxsemi.com
0.1 1 10 100 FORWARDVOLTAGE VF (V) Capacitance Characteristics Per Diode =25 a f=1 MHz 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Tj (℃) 0 4 8 12 16 20 REVERSE VOLTAGE VR (V) REVERSE VOLTAGE VR (V) Power Derating Curve Forward Characteristics Ta=25℃ Ta=100℃ 200 150 1000 0.01 250 200 100 100 150 100 0.1 0.1 0.1 T SWITCHING DIODE BAS20W 2 www.sxsemi.com
SOT-323 PackageOutline Dimensions Symbol DimensionsIn Millimeters DimensionsIn Inches Min Max Min Max A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.200 0.400 0.008 0.016 c 0.080 0.150 0.003 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.450 0.085 0.096 e 0.650TYP 0.026TYP e1 1.200 1.400 0.047 0.055 L 0.525 REF 0.021 REF L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° SOT-323Suggested Pad Layout SWITCHING DIODE BAS20W 3 www.sxsemi.com