UMD0521B SXSEMI | Alldatasheet
Document overview
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Technical content
VRWM PeakReverseWorkingVoltage IR ReverseLeakageCurrent@VRWM VBR BreakdownVoltage@IT IT TestCurrent IPP MaximumReversePeakPulseCurrent VC ClampingVoltage@IPP PPP PeakPulsePower CJ JunctionCapacitance IF ForwardCurrent VF ForwardVoltage@IF IPP I VCVBRVRWM IT IR IR IT V V RWMVBRVC IPP
Description
The protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. They feature large cross-sectional area junctions for conducting high transient currents, offer desirable electrical characteristics for board level protection, such as fast response time, low operating voltage. It gives designer the flexibility to protect one bi-directional line in applications where arrays are not practical. Feature
Applications
W p e a k p u l s e p o w e r p e r l i n e t P μ s S O D p a c k a g e R e p l a c e m e n t f o r M L V B i d i r e c t i o n a l c o n f i g u r a t i o n s R e s p o n s e t i m e i s t y p i c a l l y n s H i g h E S D p r o t e c t i o n L o w c l a m p i n g v o l t a g e R o H S c o m p l i a n t C e l l u l a r p h o n e s P o r t a b l e d e v i c e s D i g i t a l c a m e r a s P o w e r s u p p l i e s Mechanical Characteristics Leadfinish:100%matteSn(Tin) Mountingposition:Any Qualifiedmaxreflowtemperature:260℃ DevicemeetsMSL1requirements Puretinplating:7~17um Pinflatness:≤3mil Electronics Parameter UMD0521B Transient Voltage Suppressors for ESD Protection UMD0521B SOD-923 1 www.sxsemi.com
Electrical characteristics per line@25℃ (unless otherwisespecified) Parameter Symbol Conditions Min. Typ. Max. Units PeakReverseWorkingVoltage VRWM 5 V BreakdownVoltage VBR It =1mA 5.6 6.7 7.8 V ReverseLeakageCurrent IR VRWM=5VT=25℃ 1.0 μA ClampingVoltage VC IPP=3A 12 V JunctionCapacitance Cj VR=0Vf=1MHz 0.5 pF Absolute maximumrating@25℃ Rating Symbol Value Units PeakPulsePower (tp=8/20μs) Ppp 40 W OperatingTemperature TJ -55to150 ℃ StorageTemperature TSTG -55to150 ℃ Typical Characteristics t T i m e μ s F i g P u l s e W a v e f o r m T L L e a d T e m p e r a t u r e F i g P o w e r D e r a t i n g C u r v e I IPP–PeakPulse Current -%of IPP %OfRated Power tf=8μs tP=20μs( PP/2) Transient Voltage Suppressors for ESD Protection UMD0521B 2 www.sxsemi.com
Pulsewaveform:tp=8/20us 14 1000 100 0 0.25 0.5 0.75 1 IPP-Peakpulse current(A) 1 10 100 PulseDuration(us) 1000 Fig3.Clampingvoltagevs.Peakpulsecurrent Fig4.NonRepetitivePeakPulsePowervs.Pulsetime Solder ReflowRecommendation 300 250 200 150 100 Remark:Pbfreefor260 ;Pbfor245 Preliminary Heating Soldering Cooling(in air) 260℃ (20,-5℃) 245℃ (20,-5℃) 120℃ 100℃ 2to5min morethan1min Lessthan10s VC-ClampingVoltage(V) TemperatureofSoldering PeakPulsePower (W) Transient Voltage Suppressors for ESD Protection UMD0521B 3 www.sxsemi.com
1.20 0.50 0.60 0.70 Product dimension (SOD-923) E D H Unit:mm Suggested PCB Layout
Ordering information
TAPING SOD-923(Pb-Free) 8000 /Tape &Reel C A B Dim Inches Millimeters MIN MAX MIN MAX A 0.030 0.033 0.75 0.85 B 0.022 0.026 0.55 0.65 C 0.037 0.041 0.95 1.05 D 0.014 0.017 0.36 0.43 E 0.006 0.010 0.15 0.25 F 0.002 0.006 0.05 0.15 H 0.003 0.007 0.07 0.17 F Transient Voltage Suppressors for ESD Protection UMD0521B 4 www.sxsemi.com