TFS040N03N TUOFENG | Alldatasheet

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Technical content

Description

The TFS040N03N uses advanced trench technology to provi de excellent R DS(ON) , low gate charge and operation with gate voltages as low as4.5V. This device is suitable for use as a Battery protection or in other switching application. General Feature V DS =30V , I D =48A R DS(ON) Typ =3.9mΩ @ V GS =10V R DS(ON) Typ =5.5mΩ @ V GS =4.5V High Power and current handing cap ability Lead free product is acquired Surface mount package Application Battery switch DC/DC converter S1/D2 Schematic diagram SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD TFS040N03N N -CHANNEL ENHANCEMENT MODE POWER MOSFET DFN5060-8L Page www.sztuofeng.com G1 D1 D1 D1 G2 S2 S2 S2 TF S040N03N AYXA

  • Package Marking and Ordering Information:
  • Absolute Maximum Ratings（TC =25℃） Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID@TC=25℃ 48 A ID@TC=75℃ 34 A ID@TC=100℃ 29 A Pulsed Drain Current ① IDM 120 A Total Power Dissipation PD@TC=25℃ 30 W Total Power Dissipation PD@TA=25℃ 1.9 W Operating Junction Temperature T J -55 to 150 ℃ Storage Temperature TSTG -55 to 150 ℃ Single Pulse Avalanche Energy EAS 75 mJ Part NO. TFS040N03N Marking1 S040N03N: TFS040N03N Marking2 Basic ordering unit (pcs) 5000 TF:tuofeng; Y:year code; X:Week; AA:device code; PIN1 Apr .2022 V1.1
  • Thermal resistance Parameter Symbol Min. Typ. Max. Unit Thermal resistance, junction - case RthJC 4.5 °C/W Thermal resistance, junction - ambient RthJA - - 45 °C/W Soldering temperature, wavesoldering for 8 s Tsold - - 265 °C
  • Electronic Characteristics(Tj=25℃ ,unless otherwise notse) Parameter Symbol Condition Min. Typ Max. Unit Drain-Source Breakdown Voltage BVDSS VGS =0V,ID =250uA 30 V Gate Threshold Voltage VGS(TH) VGS =V DS, ID =250uA 1.1 2.0 V Drain-Source Leakage Current IDSS VDS=30 VGS =0V 1.0 uA Gate- Source Leakage Current IGSS VGS=± 20V ,VDS =0V ±100 nA Static Drain-source On Resistance RDS(ON) VGS=10V, ID=20A 3.9 5.5 mΩ VGS=4.5V, ID=15A 5.5 mΩ Forward Transconductance gFS VDS =25V, ID=20A 12 Source-drain voltage VSD Is=20A 1.20 V
  • Electronic Characteristics Parameter Symbol Condition Min. Typ Max. Unit Input capacitance Ciss f = 1MHz VDS=15V VGS=0V - 2700 - pF Output capacitance Coss - 320 - Reverse transfer capacitance Crss - 240 -
  • Gate Charge characteristics(Ta = 25℃) Parameter Symbol Condition Min. Typ Max. Unit Total gate charge Qg VDD = 15V ID = 20A VGS = 10V - 42.0 - nC Gate - Source charge Qgs - 4.00 - Gate - Drain charge Qgd - 14.0 - Note: ① Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% ; 1.6 S - - - - 7.5 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD N -CHANNEL ENHANCEMENT MODE POWER MOSFET Page www.sztuofeng.com TFS040N03N Apr .2022 V1.1

SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD N -CHANNEL ENHANCEMENT MODE POWER MOSFET Page www.sztuofeng.com DFN5060-8L TFS040N03N Apr .2022 V1.1 D E L k b L e Ne BOTTOMVIEW TOPVIEW A SIDEVIEW