TFD4884

TFD4884 TUOFENG | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 5

Technical content

Features

z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Absolute Maximum Ratings Thermal Data Product Summery Page 1 The TFD4884 is the highest performance trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and gate chargens for most of the synchronous buck converter applications . The TFD4884 meet the RoHS and Green Product requirement,100% EAS guaranteed with full function reliability approved. SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD TFD4884 N-Channel Enhancement Mode Power MOSFET Schematic diagram PDFN3333-8 top view N -CHANNEL ENHANCEMENT MODE POWER MOSFET Dec.2018www.sztuofeng.com

Symbol Parameter Conditions Min. Typ. Max. Unit Drain-Source Breakdown Voltage V GS=0V , ID=250uA 30 --- --- V RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V , ID=9A --- 15 18 mΩ VGS=4.5V , ID= A --- 23 VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.0 1.2 2.1 V IDSS Drain-Source Leakage Current VDS=28V , VGS=0V , TJ=25℃ --- --- 1 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=9A --- 30 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 3.6 Ω Qg Total Gate Charge (4.5V) VDS=15V , VGS=4.5V , ID=9A --- nC Qgs Gate-Source Charge --- 1.5 --- Qgd Gate-Drain Charge --- 2.8 --- Td(on) Turn-On Delay Time VDD=15V , VGEN=10V , RG=6Ω ID=1A,RL=15Ω --- 6 8.8 ns Tr Rise Time --- 8.2 14 Td(off) Turn-Off Delay Time --- 16 24 Tf Fall Time --- 4 8 Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 650 pF Coss Output Capacitance --- 65 Crss Reverse Transfer Capacitance --- 57 Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy 5 VDD=25V , L=0.5mH , IAS=9A 18 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,6 VG=VD=0V , Force Current --- --- 2 A ISM Pulsed Source Current 2,6 --- --- 50 A VSD Diode Forward Voltage 2 VGS=0V , IS=2.3A , TJ =25℃ --- --- 1.1 V trr Reverse Recovery Time IF=9A , dI/dt=100A/µs , TJ=25℃ --- 6 --- nS Qrr Reverse Recovery Charge --- 3.9 --- nC Note : 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper,t<10sec. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.5mH,IAS=9A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Diode Characteristics Guaranteed Avalanche Characteristics Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Page 2 BVDSS --- --- --- --- --- 8.9 Dec.2018 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD TFD4884 N -CHANNEL ENHANCEMENT MODE POWER MOSFET www.sztuofeng.com

RDSON (mΩ) ID= 9 A 00 . 3 0 . 6 0 . 9 IS -Source Current(A) TJ=150℃ TJ=25℃ 0.2 0.6 1.4 1.8 -50 0 50 100 150 Normalized VGS(th) 0.3 0.6 0.9 1.2 1.5 1.8 2.1 -50 0 50 100 150 Normalized On Resistance Typical Characteristics Fig.1 T ypical Output Characteristics VGS (V) Fig.2 On-Resistance vs. G-S Voltage VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics TJ ,Junction Temperature (℃)Fig.5 Normalized VGS(th) vs. TJ TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ Page 3 VDS=15V ID=9A Dec.2018 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD TFD4884 N -CHANNEL ENHANCEMENT MODE POWER MOSFET www.sztuofeng.com

VDS Drain to Source Voltage (V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Normalized Thermal Response (RθJA) 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PDM D = TON/T TJpeak = TC+PDMXRθJC TON T Fig.8 Safe Operating Area t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform Page 4 Dec.2018 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD TFD4884 N -CHANNEL ENHANCEMENT MODE POWER MOSFET www.sztuofeng.com

Page Dec.20185 PDFN3333 H L b θ E A C M e D 2.80 3. 55 0. 60 0. 25 2. 35 0. 35 0.65 0.4 K 0.25 1.29 MIN NOM MAX MIN NOM MAX MIN NOM MAX MIN NOM MAX INCH 0.65BSC 0.026BSC SYMBOL MM INCH SYMBOL MM SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD TFD4884 N -CHANNEL ENHANCEMENT MODE POWER MOSFET Land Pattern ︵ Only for Ref erence ︶ www.sztuofeng.com