TFD085N03M TUOFENG | Alldatasheet

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Description

The TFD085N03M uses advanced trench technology to provi de excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. General Feature VDS =30V , ID =25A RDS(ON) Typ =8.5mΩ @ VGS=10V =10mΩ @ VGS=4.5V RDS(ON) Typ High Power and current handing cap ability Lead free product is acquired Surface mount package Application Battery switch DC/DC converter Schematic diagram SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD TFD085N03M N -CHANNEL ENHANCEMENT MODE POWER MOSFET PDFN3333-8 Page 1 Jul.2021 V1.0www.sztuofeng.com S1 G1 S2 G2 D1 D1 D2 D2 TF D085N03MAYXA

  • Package Marking and Ordering Information:
  • Absolute Maximum Ratings（TC =25℃） Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID@TC=25℃ 25 A ID@TC=75℃ 17 A ID@TC=100℃ 12 A Pulsed Drain Current ① IDM 75 A Total Power Dissipation PD@TC=25℃ 16 W Total Power Dissipation PD@TA=25℃ 0.9 W Operating Junction Temperature T J -55 to 150 ℃ Storage Temperature TSTG -55 to 150 ℃ Single Pulse Avalanche Energy EAS 56 mJ Part NO. TFD085N03M Marking1 D085N03M: TFD085N03M Marking2 Basic ordering unit (pcs) 5000 TF:tuofeng; Y:year code; X:Week; AA:device code;
  • Thermal resistance Parameter Symbol Min. Typ. Max. Unit Thermal resistance, junction - case RthJC 8.0 °C/W Thermal resistance, junction - ambient RthJA - - 55 °C/W Soldering temperature, wavesoldering for 8 s Tsold - - 265 °C
  • Electronic Characteristics Parameter Symbol Condition Min. Typ Max. Unit Drain-Source Breakdown Voltage BVDSS VGS =0V,ID =250uA 30 V Gate Threshold Voltage VGS(TH) VGS =V DS, ID =250uA 1.2 2.5 V Drain-Source Leakage Current IDSS VDS=30 VGS =0V 1.0 uA Gate- Source Leakage Current IGSS VGS=± 20V ,VDS =0V ±100 nA Static Drain-source On Resistance RDS(ON) VGS=10V, ID=15A 8.5 10 mΩ VGS=4.5V, ID=10A 10 mΩ Forward Transconductance gFS VDS =25V, ID=10A 10 Source-drain voltage VSD Is=10A 1.20 V
  • Electronic Characteristics Parameter Symbol Condition Min. Typ Max. Unit Input capacitance Ciss f = 1MHz VDS=15V VGS=0V - 927.2 - pF Output capacitance Coss - 141.1 - Reverse transfer capacitance Crss - 126.9 -
  • Gate Charge characteristics(Ta = 25℃) Parameter Symbol Condition Min. Typ Max. Unit Total gate charge Qg VDD = 24V = 10A = 10V ID VGS - 23.0 - nC Gate - Source charge Qgs - 2.58 - Gate - Drain charge Qgd - 6.20 - Note: ① Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% ; 1.5 S - - - - SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD TFD085N03M N -CHANNEL ENHANCEMENT MODE POWER MOSFET Page 2 Jul.2021 V1.0www.sztuofeng.com

H L b θ E A C M e D 2.80 3. 55 0. 60 0. 25 2. 35 0. 35 0.65 0.4 K 0.25 1.29 MIN NOM MAX MIN NOM MAX MIN NOM MAX MIN NOM MAX θ M * * 0.15 * * 0.006 INCH 0.65BSC 0.026BSC SYMBOL MM INCH SYMBOL MM Land Pattern Only for Ref erence SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD TFD085N03M N -CHANNEL ENHANCEMENT MODE POWER MOSFET Page 6 Jul.2021 V1.0 www.sztuofeng.com PDFN3333-8L