TF9926 TUOFENG | Alldatasheet
Document overview
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Technical content
Page 1 V1 .0 N-Channel Enhancement Mode Power MOSFET
Description
The TF9926 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features
- High power and current handing capability
- Lead free product is acquired
- Surface mount package SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS www.sztuofeng.com TF9926 Symbol VDS VGS IDM TJ, TSTG Symbol Ty p Max 48 62.5 74 110 RθJL 35 40 W Maximum Junction-to-Lead C Steady-State °C/W Thermal Characteristics Parameter Units Maximum Junction-to-Ambient A t ≤ 10s RθJA °C/W Maximum Junction-to-Ambient A Steady-State °C/W ±12Gate-Source Voltage Drain-Source Voltage Continuous Drain Current A Maximum UnitsParameter TA=25°C Absolute Maximum Ratings TA=25°C unless otherwise noted V V 30Pulsed Drain Current B Power Dissipation A TA=25°C Junction and Storage Temperature Range A PD 1.2 -55 to 150 TA=70°C ID 5.0 PRODUCTPSUMMARY VDSS ID 20V PPPP5.0A 3.5A 28P@PVGSP =P4.5V PPPPPP 35P@PVGS =P2.5V P RDS(on)P(mΩ)PMax S SSSO-8 G Pin 1 SOP-8L Equivalent Circuit MARKING TF9926 CYWP o Y :year code W :week code D1 D2
Page 2 V1 .0www.sztuofeng.com Symbol Min Typ Max Units BVDSS 20 V 500 IGSS ±100 nA VGS(th) 0.5 0.65 V ID(ON) 20 A 35 mΩ gFS 22 S VSD 0.7 1.2 V IS 3 A Ciss 722 pF Coss 50 pF Crss 45 pF Rg 9.5 Ω Qg (4.5V) 13 Qg (2.5V) Qgs Qgd tD(on) tr tD(off) 50 tf trr 23.5 ns Qrr 13.4 nC DYNAMIC PARAMETERS Maximum Body-Diode Continuous Current Gate resistance V GS=0V, VDS=0V, f=1MHz VGS=0V, VDS=30V, f=1MHz Input Capacitance Output Capacitance Turn-On Rise Time Turn-Off DelayTime VDD= 15V, VGEN = 4.5V, RL=15 Ω, RGEN=6Ω Turn-Off Fall Time Turn-On DelayTime SWITCHING PARAMETERS Total Gate Charge (2.5V) Gate Source Charge Gate Drain Charge Total Gate Charge (4.50V) VDD= 15V, VGEN = 4.5V, ID = 5A mΩ VGS= 2.5V, ID= 3.5A IS= 3A,VGS=0V VDS= 15V, ID = 5.0A RDS(ON) Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage IDSS A Gate Threshold Voltage V DS=VGS ID= 250µA VDS= 20V, VGS=0V VDS=0V, VGS=±12V Zero Gate Voltage Drain Current Gate-Body leakage current Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF= 5A, dI/dt=100A/µs Drain-Source Breakdown Voltage On state drain current ID= 250µA, VGS=0V VGS= 4.5V, VDS= 5V VGS= 4.5V, ID = 5.0A Reverse Transfer Capacitance IF= 5A, dI/dt=100A/µs A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. n 22 28 1.0 nC 11 nC 3.2 nC 3.5 nC ns 40 ns 24 ns 20 ns SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS TF9926
Page 5 V1 .0 Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e 1.270(BSC) 0.050(BSC) L 0.400 1.270 0.016 0.050 θ 0° 8° 0° 8° www.sztuofeng.com SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS TF9926