TF8N10 TUOFENG | Alldatasheet
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Technical content
Description
The 8N10 SOT-89 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Excellent package for good heat dissipation Application
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible power supply D G S Schematic diagram Absolute Maximum Ratings (TA =25℃℃ ℃℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM 18 Maximum Power Dissipation PD 1.5 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 82 /W℃ Electrical Characteristics (TA =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V ID =250µA 100 110 - V Zero Gate Voltage Drain Current I DSS V DS =80V, VGS A 500 n =0V - - VDSS RDS(ON) @10V (typ) ID 100V 123 Ω 8A m 8 A Marking and pin Assignment SOT-89 TF8N10 Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET www.sztuo eng.com 1 A 8N10 Feb,2019 V1.0
Gate-Body Leakage Current I GSS V GS =±20V,VDS On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS =VGS ,ID =250µ Drain-Source On-State Resistance R DS(ON) Ω Forward Transconductance g FS V DS =5V,ID =5.0A Dynamic Characteristics (Note4) Input Capacitance C lss - 690 - PF Output Capacitance C oss - 120 - PF Reverse Transfer Capacitance C rss VDS =25V,VGS =0V, F=1.0MHz - 90 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 11 - nS Turn-on Rise Time t r - 7.4 - nS Turn-Off Delay Time t d(off) - 35 - nS Turn-Off Fall Time t f VDD =30V,ID =5A,RL=15Ω VGS =10V,RG =2.5Ω - 9.1 - nS Total Gate Charge Q g - 15.5 nC Gate-Source Charge Q gs - 3.2 - nC Gate-Drain Charge Q gd VDS =30V,ID =5A, VGS =10V - 4.7 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,IS=3A - - 1.2 V Diode Forward Current (Note 2) I S Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production m A 1 1.4 2 V =0V - - ±90 nA - - 8 A VGS=10V, ID=5A 123 135 VGS=4.5V, ID=5A 135 145 Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET www.sztuo eng.com 2 S 8 TF8N10 Feb,2019 V1.0
1）） ））EAS test circuit 2）） ））Gate charge test circuit 3）） ））Switch Time Test Circuit Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET www.sztuo eng.com 3 TF8N10 Feb,2019 V1.0
Typical Electrical and Thermal Characteristics (curves) Figure1. Source-Drain Diode Forward Voltage Figure2. Safe operating area Figure3. Output characteristics Figure4. Transfer characteristics Figure5. Static drain-source on resistance Figure6. RDS(ON) vs Junction Temperature Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET www.sztuo eng.com 4 TF8N10 Feb,2019 V1.0
Figure7. BVDSS vs Junction Temperature Figure8. VGS(th) vs Junction Temperature Figure9. Gate charge waveforms Figure10. Capacitance Figure11. Normalized Maximum Transient Thermal Impedance Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET www.sztuo eng.com 5 TF8N10 Feb,2019 V1.0
Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET www.sztuo eng.com 6
Package Information
Feb,2019 V1.0