TF8821 TUOFENG | Alldatasheet

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 1www.sztuofeng.com 2021 V1.2

  • Ordering Information:
  • Absolute Maximum Ratings（TC =25℃）
  • General Description The TF8821 combines advanced trench Mosfet technology with a low resistance package to provide extremely low RDS(ON) .This device is ideal for load switch and battery protection applications.
  • Features Advance high cell density Trench technology Low RDS(ON) to minimize conductive loss Low Gate Charge for fast switching Low Thermal resistance
  • Application Battery Protection Load Switch Power Management
  • Product Summary Part NO. TF8821 Marking 1 MOQ 5000 8821:Part No. Marking 2 Y:year code; X:Week; AA:device code; Parameter Symbol Rating Unit Drain-Source Voltage VDS 19 V Gate-Source Voltage VGS ±12 V Continuous Drain Current ID@TC=25℃ 15 A ID@TC=75℃ 11 A ID @TC=100℃ 9 A Pulsed Drain Current ① IDM 45 A Total Power Dissipation PD@TC=25℃ 12 W Total Power Dissipation PD@TA=25℃ 0.8 W Operating Junction Temperature T J -55 to 150 ℃ Storage Temperature TSTG -55 to 150 ℃ Note: ① Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% ; V(BR)DSS RDS(on) TYP ID 19V 5.0mΩ @ 4.5V 15A @ 2.5V Max 6.1mΩ DFN3x3-8L AYXA 8821 TF TF:tuofeng; NOV.

Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 2www.sztuofeng.com 2021 V1.2 Single Pulse Avalanche Energy EAS 30 mJ Avalanche Current IAS IAR 10 A

  • Thermal resistance Parameter Symbol Min. Typ. Max. Unit Thermal resistance, junction - case RthJC - - 7.0 °C/W Thermal resistance, junction - ambient RthJA - - 56 °C/W Soldering temperature, wave soldering for 8s Tsold - - 265 °C
  • Electronic Characteristics(Tj=25℃,unless otherwise notse) Parameter Symbol Condition Min. Typ Max. Unit Drain-Source Breakdown Voltage BVDSS VGS =0V,ID =250uA 19 V Gate Threshold Voltage VGS(TH) VGS =V DS, ID =250uA 0.45 0.90 V Drain-Source Leakage Current IDSS VDS=19V, VGS =0V 1.0 uA Gate- Source Leakage Current IGSS VGS=±12V ,VDS =0V ±100 nA Static Drain-source On Resistance RDS(ON) VGS=4.5V, ID=8A 5.0 6.5 mΩ VGS=2.5V, ID=6A 6.1 7.5 mΩ Forward Transconductance gFS VDS =10V, ID=8A 15 S Source-drain voltage VSD Is=3A 1.20 V
  • Electronic Characteristics Parameter Symbol Condition Min. Typ Max. Unit Input capacitance Ciss Vds=15V,Vgs=0V f = 1MHz - 878.7 - pF Output capacitance Coss - 133.2 - Reverse transfer capacitance Crss - 110.3 - ⚫Gate Charge characteristics(Ta = 25℃) Parameter Symbol Condition Min. Typ Max. Unit Gate Risistance Rg f = 1MHz 1.2 Ω Total gate charge Qg VDD = 10V ID = 8.0A VGS = 4.5V - 19 - nC Gate - Source charge Qgs - 2.8 - Gate - Drain charge Qgd - 5.9 - Turn-ON Delay time tD(on) VGS=4.5V ,VDS= 10V , ID=8.0A 5.3 ns Turn-ON Rise time tr 14 ns Turn-Off Delay time tD(off) 39 ns Turn-Off Fall time tf 12 ns 0.60 TF8821 NOV.

Fig.1 Power Dissipation Fig.3 Threshold Voltage V.S Junction Temperature Fig.4 Resistance V.S Drain Current Fig.5 On-Resistance VS Drain Current Fig.6 On-Resistance V.S Junction Temperature 0.2 0.4 0.6 0.8 1.2 0 50 100 150 200 Power Dissipation Pd/Pd MAX.% Temperature (。C) 1.0 0.8 0.6 0.4 0.2 -50 50 150 Junction Temperature Vgs(th ) Id-Drain Current Vgs=4.5V RDson(mΩ) 0.3 0.6 0.9 1.2 1.5 -50 0 50 Temperature 100 150 Normalized ON-Resistance Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 3www.sztuofeng.com NOV.2021 V1.2 Fig.2 Typical output Characteristics 100 200 300 0 0.5 1 1.5 2 Drain Current (A) Drain-Source voltage (V) VGS=4.5V VGS=2.5V 0 50 Drain Current(A) 100 ON Resistance Vgs=2.5V 5 10 15 200 TF8821

Fig.7 Switching Time Measurement Circuit Fig.8 Gate Charge Waveform Fig.9 Switching Time Measurement Circuit Fig.10 Gate Charge Waveform Fig.11 Avalanche Measurement Circuit Fig.12 Avalanche Waveform Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 4www.sztuofeng.com NOV.2021 V1.2 TF8821

Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 5www.sztuofeng.com NOV.2021 V1.2 TF8821 DFN3×3 Package Outline Data