TF80N03 TUOFENG | Alldatasheet

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Technical content

Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 1www.sztuofeng.com Feb 2021 V2.0

  • Ordering Information:
  • Absolute Maximum Ratings（TC =25℃）
  • General Description The TF80N03 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .This device is ideal for load switch and battery protection applications.
  • Features Advance high cell density Trench technology Low RDS(ON) to minimize conductive loss Low Gate Charge for fast switching Low Thermal resistance
  • Application MB/VGA Vcore SMPS 2nd Synchronous Rectifier POL application BLDC Motor driver
  • Product Summary VDS =30V RDSON(10V typ) RDSON(4.5V typ) ID=80A =4.2mΩ =7.3mΩ Part NO. TF80N03 Marking 1 MOQ TO-251:50/PCS TO-252:2500/PCS D G S 80N03:TF80N03 Marking 2 TF:tuofeng; Y:year code; X:Week; AA:device code; Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID@TC=25℃ 80 A ID@TC=75℃ 60 A ID @TC=100℃ 48 A Pulsed Drain Current ① IDM 240 A Total Power Dissipation PD@TC=25℃ 55 W Total Power Dissipation PD@TA=25℃ 2.0 W Operating Junction Temperature T J -55 to 150 ℃ Storage Temperature TSTG -55 to 150 ℃ Note: ① Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% ; TO-252 D G S TO-251 G D S 80N03 TFYXXAA 80N03 TFYXXAA DD

Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 2www.sztuofeng.com Feb 2021 V2.0 Single Pulse Avalanche Energy EAS 230 mJ Avalanche Current IAS IAR 30 A

  • Thermal resistance Parameter Symbol Min. Typ. Max. Unit Thermal resistance, junction - case RthJC - - 2.0 °C/W Thermal resistance, junction - ambient RthJA - - 55 °C/W Soldering temperature, wave soldering for 8s Tsold - - 265 °C
  • Electronic Characteristics Parameter Symbol Condition Min. Typ Max. Unit Drain-Source Breakdown Voltage BVDSS VGS =0V,ID =250uA 30 V Gate Threshold Voltage VGS(TH) VGS =V DS, ID =250uA 1.0 2.3 V Drain-Source Leakage Current IDSS VDS=30V, VGS =0V 1.0 uA Gate- Source Leakage Current IGSS VGS=± 20V ,VDS =0V ±100 nA Static Drain-source On Resistance RDS(ON) VGS=10V, ID=30A 4.2 5.5 mΩ VGS=4.5V, ID=20A 7.3 9.5 mΩ Forward Transconductance gFS VDS =15V, ID=20A 15 S Source-drain voltage VSD Is=20A 1.20 V
  • Electronic Characteristics Parameter Symbol Condition Min. Typ Max. Unit Input capacitance Ciss Vds=15V,Vgs=0V f = 1MHz - 2016 - pF Output capacitance Coss - 251 - Reverse transfer capacitance Crss - 230 - ⚫Gate Charge characteristics(Ta = 25℃) Parameter Symbol Condition Min. Typ Max. Unit Gate Risistance Rg f = 1MHz 1.5 Ω Total gate charge Qg VDD = 10V ID = 30A VGS = 10V - 60.5 - nC Gate - Source charge Qgs - 8.1 - Gate - Drain charge Qgd - 7.8 - Turn-ON Delay time tD(on) VGS=10V ,VDS=10V RG =2.7Ω, I=30A 20 ns Turn-ON Rise time tr 15 ns Turn-Off Delay time tD(off) 60 ns Turn-Off Fall time tf 10 ns 1.5 TF80N03

Fig.1 Power Dissipation Fig.3 Threshold Voltage V.S Junction Temperature Fig.4 Resistance V.S Drain Current Fig.5 On-Resistance VS Drain Current Fig.6 On-Resistance V.S Junction Temperature 0.2 0.4 0.6 0.8 1.2 0 50 100 150 200 Power Dissipation Pd/Pd MAX.% Temperature (。C) 1.8 1.6 1.4 1.2 1.0 -50 50 150 Junction Temperature Vgs(th ) Id-Drain Current Vgs=10V RDson(mΩ) 0.3 0.6 0.9 1.2 1.5 -50 0 50 Temperature 100 150 Normalized ON-Resistance Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 3www.sztuofeng.com Feb 2021 V2.0 Fig.2 Typical output Characteristics 100 200 300 0 0.5 1 1.5 2 Drain Current (A) Drain-Source voltage (V) VGS=10V VGS=4.5V 0 40 Drain Current(A) ON Resistance Vgs=4.5V 10 20 30 400 TF80N03

Fig.7 Switching Time Measurement Circuit Fig.8 Gate Charge Waveform Fig.9 Switching Time Measurement Circuit Fig.10 Gate Charge Waveform Fig.11 Avalanche Measurement Circuit Fig.12 Avalanche Waveform Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 4www.sztuofeng.com Feb 2021 V2.0 TF80N03

Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 5www.sztuofeng.com Feb 2021 V2.0

Package Information

Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 2.200 2.400 0.087 0.094 A1 1.050 1.350 0.042 0.054 B 0.700 1.000 0.028 0.040 b 0.500 0.700 0.020 0.028 b1 0.700 0.900 0.028 0.035 c 0.430 0.580 0.017 0.023 c1 0.430 0.580 0.017 0.023 D 6.350 6.650 0.250 0.262 D1 5.200 5.400 0.205 0.213 E 5.400 6.000 0.213 0.237 e 2.300 TYP. 0.091 TYP. e1 4.500 4.700 0.177 0.185 L 4.900 9.400 0.194 0.372 Notes 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exac TO-251 TF80N03

Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 6www.sztuofeng.com Feb 2021 V2.0 UNIT: mm 0.25 GAUGE PLANE L VIEW A SEATING PLANE D E e H A SEE VIEW A b c SYMBOL MIN. MAX. 2.39 4.95 5.46 0.46 0.61 0.13 5.33 A c D E MILLIMETERS b 0.50 0.89

2.29 BSC

4.57 6.35 6.73 6.22

0.090 BSC

MIN. MAX. INCHES 0.094 0.020 0.035 0.195 0.215 0.018 0.024 0.210 0.180 0.250 0.265 2.18 0.245 0.086 0.005 0.035 0.070 0.410 H L e 9.40 0.90 0.46 0.89 1.78 10.41 0.370 0.035 0.018 0.040L4 1.02 0.1503.81 0.89 2.03 0.035 0.080 0 8°0° 8°0° 6.00 6.00 0.236 0.236 6.8 MIN. 3 MIN. 6.25 MIN. 6.6 1.5 MIN. 2.286 4.572 TO-252 TF80N03