TF68H11 TUOFENG | Alldatasheet
Document overview
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Technical content
Features
68V,110A N-Channel MOSFET RDS(on)(typ.)=6.5mΩ@VGS=10V High ruggedness Fast switching 100% avalanche tested Exceptional dv/dt capability
Applications
Switching application Absolute Maximum Ratings Symbol Parameter Value Units VDSS Drain-Source Voltage 68 V VGS Gate-Source Voltage +25 V ID Continuous Drain Current(TC=25℃) 110 A IDM Pulsed Drain Current(Note 1 ) 240 A EAS Single Pulsed Avalanche Energy(Note 2) 256 mJ PD Maximum Power Dissipation ( TC=25 ℃) 65 W Maximum Power Dissipation ( TC=100 ℃) 32 W TJ Operating Junction Temperature Range -55 to +175 TSTG Storage Temperature Range -55 to +175 Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2.Starting TJ=25℃,L=1.0mH,RG=50Ω,ID=37A,VGS=10V TO-220H G D S G G D S TO-263 G D S TO-220 www.sztuofeng.com ,2018 V1.01 Mar N -CHANNEL ENHANCEMENT MODE POWER MOSFET SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD TF68H11
Symbol Parameter Max. Units Rth J-C Thermal Resistance, Junction to case 2.2 W Electrical Characteristics (TC=25 unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Units B VDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 68 V IDSSS Drain-Source Leakage Current VDS=68V, VGS=0V 1 uA IGSS Gate Leakage Current, Forward VGS=25V, VDS=0V 100 n A Gate Leakage Current, Reverse VGS= -25V, VDS=0V -100 n A VGS(th) Gate Threshold Voltage VGS=VDS, ID=250uA 2 3 4 V R DS(on) Collector-Emitter Saturation Voltage VGS=10V, ID=30A 6.5 8 m Ω gfs Forward Transconductance VDS=15V, ID=30A 28 S Qg Total Gate Charge VDD=68V VGS=10V ID=30A nC Q gs Gate-Source Charge 17 nC Q gd Gate-Drain Charge 24 nC t d(on) Turn-on Delay Time VDD=35V VGS=10V ID=25A RG=3.5 - 37 ns t r Turn-on Rise Time - 35 ns t d(off) Turn-off Delay Time - 110 ns t f Turn-off Fall Time - 77 ns Ciss Input Capacitance VDS=30V VGS=0V f = 1MHz - 3250 pF Coss Output Capacitance - 580 pF Crss Reverse Transfer Capacitance - 165 pF R Gint Integrated gate resistor Ω Source-Drain Ratings and Characteristics (TC=25℃ unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage V GS =0V, IS A - 1.2 V I S C ontinuous Diode Forward Current A t r r Rev erse Recovery Time V DD =25V,I S =30A dI F /dt=100A/us - 42 ns Q r r Reverse Recovery Charge - 70 nC www.sztuofeng.com ,2018 V1.02 Mar N -CHANNEL ENHANCEMENT MODE POWER MOSFET SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD TF68H11
www.sztuofeng.com ,2018 V1.03 Mar N -CHANNEL ENHANCEMENT MODE POWER MOSFET SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD TF68H11
www.sztuofeng.com ,2018 V1.04 Mar N -CHANNEL ENHANCEMENT MODE POWER MOSFET SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD TF68H11
www.sztuofeng.com ,2018 V1.05 Mar N -CHANNEL ENHANCEMENT MODE POWER MOSFET SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD TF68H11
Avalanche test circuits and waveforms Gate charge test circuits and waveforms www.sztuofeng.com ,2018 V1.06 Mar N -CHANNEL ENHANCEMENT MODE POWER MOSFET SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD TF68H11
Switching time test circuits and waveforms www.sztuofeng.com ,2018 V1.07 Mar N -CHANNEL ENHANCEMENT MODE POWER MOSFET SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD TF68H11