TF60N02 TUOFENG | Alldatasheet

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Technical content

Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 1www.sztuofeng.com Jun 2021 V1.1

  • Ordering Information:
  • Absolute Maximum Ratings（TC =25℃）
  • General Description The TF60N02 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .This device is ideal for load switch and battery protection applications.
  • Features Advance high cell density Trench technology Low RDS(ON) to minimize conductive loss Low Gate Charge for fast switching Low Thermal resistance
  • Application MB/VGA Vcore SMPS 2nd Synchronous Rectifier POL application BLDC Motor driver
  • Product Summary VDS =20V RDSON(4.5V typ) RDSON(2.5V typ) ID=60A =4.3mΩ =5.6mΩ Part NO. TF60N02 Marking 1 MOQ TO-251:50/PCS TO-252:2500/PCS D G S 60N02 Marking 2 TF:tuofeng; Y:year code; X:Week; AA:device code; Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current ID@TC=25℃ 60 A ID@TC=75℃ 45 A ID @TC=100℃ 36 A Pulsed Drain Current ① IDM 120 A Total Power Dissipation PD@TC=25℃ 50 W Total Power Dissipation PD@TA=25℃ 2.0 W Operating Junction Temperature T J -55 to 150 ℃ Storage Temperature TSTG -55 to 150 ℃ Note: ① Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% ; TO-252 D G S TO-251 G D S 60N02 TFYXXAA 60N02 TFYXXAA DD

Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 2www.sztuofeng.com Jun 2021 V1.1 Single Pulse Avalanche Energy EAS 130 mJ Avalanche Current IAS IAR 20 A

  • Thermal resistance Parameter Symbol Min. Typ. Max. Unit Thermal resistance, junction - case RthJC - - 2.0 °C/W Thermal resistance, junction - ambient RthJA - - 47 °C/W Soldering temperature, wave soldering for 8s Tsold - - 265 °C
  • Electronic Characteristics Parameter Symbol Condition Min. Typ Max. Unit Drain-Source Breakdown Voltage BVDSS VGS =0V,ID =250uA 20 V Gate Threshold Voltage VGS(TH) VGS =V DS, ID =250uA 0.45 0.90 V Drain-Source Leakage Current IDSS VDS=20V, VGS =0V 1.0 uA Gate- Source Leakage Current IGSS VGS=±12V ,VDS =0V ±100 nA Static Drain-source On Resistance RDS(ON) VGS=4.5V, ID=20A 4.3 5.5 mΩ VGS=2.5V, ID=15A 5.6 8.5 mΩ Forward Transconductance gFS VDS =15V, ID=10A 15 S Source-drain voltage VSD Is=20A 1.20 V
  • Electronic Characteristics Parameter Symbol Condition Min. Typ Max. Unit Input capacitance Ciss Vds=10V,Vgs=0V f = 1MHz - 1784 - pF Output capacitance Coss - 266 - Reverse transfer capacitance Crss - 212 - ⚫Gate Charge characteristics(Ta = 25℃) Parameter Symbol Condition Min. Typ Max. Unit Gate Risistance Rg f = 1MHz 1.5 Ω Total gate charge Qg VDD = 10V ID = 20A VGS = 4.5V - 38 - nC Gate - Source charge Qgs - 5.8 - Gate - Drain charge Qgd - 7.9 - Turn-ON Delay time tD(on) VGS=4.5V ,VDS=10V RG =6.0Ω, I=20A 7 ns Turn-ON Rise time tr 6 ns Turn-Off Delay time tD(off) 30 ns Turn-Off Fall time tf 8 ns 0.58 TF60N02

Fig.1 Power Dissipation Fig.3 Threshold Voltage V.S Junction Temperature Fig.4 Resistance V.S Drain Current Fig.5 On-Resistance VS Drain Current Fig.6 On-Resistance V.S Junction Temperature 0.2 0.4 0.6 0.8 1.2 0 50 100 150 200 Power Dissipation Pd/Pd MAX.% Temperature (。C) 1.0 0.8 0.6 0.4 0.2 -50 50 150 Junction Temperature Vgs(th ) Id-Drain Current Vgs=4.5V RDson(mΩ) 0.3 0.6 0.9 1.2 1.5 -50 0 50 Temperature 100 150 Normalized ON-Resistance Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 3www.sztuofeng.com Jun 2021 V1.1 Fig.2 Typical output Characteristics 100 200 300 0 0.5 1 1.5 2 Drain Current (A) Drain-Source voltage (V) VGS=4.5V VGS=2.5V 0 40 Drain Current(A) ON Resistance TF60N02 Vgs=2.5V 10 20 30 400

Fig.7 Switching Time Measurement Circuit Fig.8 Gate Charge Waveform Fig.9 Switching Time Measurement Circuit Fig.10 Gate Charge Waveform Fig.11 Avalanche Measurement Circuit Fig.12 Avalanche Waveform Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 4www.sztuofeng.com Jun 2021 V1.1 TF60N02

Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 5www.sztuofeng.com Jun 2021 V1.1

Package Information

Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 2.200 2.400 0.087 0.094 A1 1.050 1.350 0.042 0.054 B 0.700 1.000 0.028 0.040 b 0.500 0.700 0.020 0.028 b1 0.700 0.900 0.028 0.035 c 0.430 0.580 0.017 0.023 c1 0.430 0.580 0.017 0.023 D 6.350 6.650 0.250 0.262 D1 5.200 5.400 0.205 0.213 E 5.400 6.000 0.213 0.237 e 2.300 TYP. 0.091 TYP. e1 4.500 4.700 0.177 0.185 L 4.900 9.400 0.194 0.372 Notes 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exac TF60N02 TO-251

Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 6www.sztuofeng.com Jun 2021 V1.1 UNIT: mm 0.25 GAUGE PLANE L VIEW A SEATING PLANE L4 L3D E e H A SEE VIEW A b c SYMBOL MIN. MAX. 2.39 4.95 5.46 0.46 0.61 0.13 5.33 A c D E MILLIMETERS b 0.50 0.89

2.29 BSC

4.57 6.35 6.73 6.22

0.090 BSC

MIN. MAX. INCHES 0.094 0.020 0.035 0.195 0.215 0.018 0.024 0.210 0.180 0.250 0.265 2.18 0.245 0.086 0.005 0.035 0.070 0.410 H L e 9.40 0.90 0.46 0.89 1.78 10.41 0.370 0.035 0.018 0.040L4 1.02 0.1503.81 0.89 2.03 0.035 0.080 0 8°0° 8°0° 6.00 6.00 0.236 0.236 6.8 MIN. 3 MIN. 6.25 MIN. 6.6 1.5 MIN. 2.286 4.572 TF60N02 TO-252