TF5N10

TF5N10 TUOFENG | Alldatasheet

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Technical content

Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) 510TF 3000 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 5 A ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 3.2 A IDM Pulsed Drain Current2 15 A PD@TA=25℃ Total Power Dissipation3 3.1 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-ambient(steady state)1 100 ℃/W RθJA Thermal Resistance Junction-ambient(t<10s)1 40 ℃/W

Description

The TF5N10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 100V ID =5A RDS(ON typ) = 90mΩ @ VGS=10V Application Battery protection Load switch Uninterruptible power supply TF5N10 SOT-23 TF5N10 Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET D G S www.sztuofeng.com Aug 2021 V1.1 510TF i

Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 108 --- V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=4A --- 90 125 mΩ VGS=4.5V , ID=2A --- 115 145 mΩ VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 1.7 2.5 V IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=80V , VGS=0V , TJ=85℃ --- --- 50 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.3 4.6 Qg Total Gate Charge (10V) VDS=30V , VGS=10V , ID=4A --- 3.57 --- nC Qgs Gate-Source Charge --- 0.76 --- Qgd Gate-Drain Charge --- 0.71 --- Td(on) Turn-On Delay Time VDD=30V , VGS=10V , RG=3.3 ID=1A --- 11 --- ns Tr Rise Time --- 6 --- Td(off) Turn-Off Delay Time --- 30 --- Tf Fall Time --- 4 --- Ciss Input Capacitance VDS=50V , VGS=0V , f=1MHz --- 182 --- pF Coss Output Capacitance --- 30 --- Crss Reverse Transfer Capacitance --- 3.6 --- IS Continuous Source Current1,4 VG=VD=0V , Force Current --- --- 2 A VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 2www.sztuofeng.com Aug 2021 V1.1 TF5N10

0 0.3 0.6 0.9 1.2 VSD , Source-to-Drain Voltage (V) IS Source Current(A) TJ=150℃ TJ=25℃ 0.2 0.6 1.4 1.8 -50 0 50 100 150 TJ ,Junction Temperature (℃ ) Normalized VGS(th) (V) Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs G-S Voltage Fig.3 Source Drain Forward Characteristics Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs TJ Fig.6 Normalized RDSON vs TJ Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET www.sztuofeng.com Aug 2021 V1.13 TF5N10

0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (RθJA) 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PDM D = TON/T TJpeak = TC+PDMXRθJC TON T Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET www.sztuofeng.com Aug 2021 V1.14 TF5N10

Package Mechanical Data-SOT-23 Symbol Dimensions in Millimeters MIN. MAX. A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e 0.950TYP e1 1.800 2.000 L 0.550REF L1 0.300 0.500 θ 0° 8° Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET www.sztuofeng.com Aug 2021 V1.1 TF5N10