TF4614

TF4614 TUOFENG | Alldatasheet

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Technical content

Page 1 V 2. 0 N and P-Channel Enhancement Mode Power MOSFET

Description

The TF4614 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features

• N-Channel VDS = 40V,ID =8.0A RDS(ON) < 22mΩ @ VGS=10V
• P-Channel VDS = -40V,ID = -7.0A RDS(ON) < 35mΩ @ VGS=-10V
• High power and current handing capability
• Lead free product is acquired
• Surface mount package Schematic diagram Marking and pin assignment SOP-8 top view Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 40 -40 V Gate-Source Voltage VGS ±20 ±20 V TA=25℃ 8.0 -7.0 Continuous Drain Current ID A Pulsed Drain Current (Note 1) IDM 40 -30 A Maximum Power Dissipation TA=25℃ PD 2.0 2.0 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note2) RθJA N-Ch 62.5 /W℃ Thermal Resistance,Junction-to-Ambient (Note2) RθJA P-Ch 62.5 /W℃ N-channel P-channel SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS TF4614 RDS(ON) < 31mΩ @ VGS=4.5V RDS(ON) < 48mΩ @ VGS=-4.5V www.sztuofeng.com TF4614 AYXA

Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 40 - V Zero Gate Voltage Drain Current IDSS VDS=40V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1.0 1.5 2.0 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=8A - 16 22 mΩ Forward Transconductance gFS VDS=5V,ID=8A 15 - - S Dynamic Characteristics (Note4) Input Capacitance Clss - 1137 - PF Output Capacitance Coss - 84.5 - PF Reverse Transfer Capacitance Crss VDS=20V,VGS=0V, F=1.0MHz - 72.5 - PF Switching Characteristics (Note 4) Turn-on Delay Time td(on) - 6.0 - nS Turn-on Rise Time tr - 20.3 - nS Turn-Off Delay Time td(off) - 26.2 - nS Turn-Off Fall Time tf VDD=20V, ID=8.0A VGS=10V,RG=3.0Ω - 12.8 - nS Total Gate Charge Qg - 25.8 - nC Gate-Source Charge Qgs - 3.65 - nC Gate-Drain Charge Qgd VDS=20V,ID=8A, VGS=10V - 4.41 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=8A - 0.75 1.0 V VGS=4.5V, ID=6A - 31 mΩ Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2 . % 4. Guaranteed by design, not subject to production SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS Page 2 V 2. 0 TF4614 www.sztuofeng.com

Square Wave Pluse Duration(sec) Figure 13 Normalized Maximum Transient Thermal Impedance r(t),Normalized Effective Transient Thermal Impedance SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS Page 5 V 2. 0 TF4614 www.sztuofeng.com

Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -40 - V Zero Gate Voltage Drain Current IDSS VDS=-40V,VGS=0V - - -1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -1.1 -1.8 -2.5 V Drain-Source On-State Resistance RDS(ON) VGS=-10V, ID=-7.0A - 30 35 mΩ Forward Transconductance gFS VDS=-5V,ID=-7.0A 15 - - S Dynamic Characteristics (Note4) Input Capacitance Clss - 1277 - PF Output Capacitance Coss - 105.7 - PF Reverse Transfer Capacitance Crss VDS=-20V,VGS=0V, F=1.0MHz - 100.7 - PF Switching Characteristics (Note 4) Turn-on Delay Time td(on) - 7.0 - nS Turn-on Rise Time tr - 18.5 - nS Turn-Off Delay Time td(off) - 71.6 - nS Turn-Off Fall Time tf VDD=-20V, ID=-7.0A VGS=-10V,RG=10Ω - 27.5 - nS Total Gate Charge Qg - 28.2 - nC Gate-Source Charge Qgs - 4.1 - nC Gate-Drain Charge Qgd VDS=-20V,ID=-7.0A VGS=-10V - 5.3 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-7.0A - 0.75 -1.0 V VGS=-4.5V, ID=-4.0A - 48 mΩ Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2 . % 4. Guaranteed by design, not subject to production SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS Page 6 V 2. 0 TF4614 www.sztuofeng.com

Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e 1.270(BSC) 0.050(BSC) L 0.400 1.270 0.016 0.050 θ 0° 8° 0° 8° SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS Page 9 V 2. 0 TF4614 www.sztuofeng.com