TF3622 TUOFENG | Alldatasheet
Document overview
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Technical content
Description
The TF3622 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. General Feature
- V DS =30V,ID =25A RDS(ON) =12mΩ @ VGS=10V RDS(ON) =16mΩ @ VGS=4.5V
- High Power and current handing capability
- Lead free product is acquired
- Surface mount package Application
- Battery switch
- DC/DC converter Schematic diagram Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 25 A Drain Current-Pulsed (Note 1) IDM 75 A Maximum Power Dissipation PD 3.5 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 35 /W℃ Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS=0V ID=250μA 30 - - V Zero Gate Voltage Drain Current I DSS V DS=30V,VGS=0V - - 1 μA SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD TF3622 N -CHANNEL ENHANCEMENT MODE POWER MOSFET PDFN3333-8 top view N-Channel Enhancement Mode Power MOSFET Page Mar.2020 V1.01www.sztuofeng.com Typ Typ
Parameter Symbol Condition Min Typ Max Unit Gate-Body Leakage Current I GSS V GS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS=VGS,ID=250μA 1.0 1.6 2.4 V VGS=10V, ID=15A Ω Drain-Source On-State Resistance R DS(ON) VGS=4.5V, ID Ω Dynamic Characteristics (Note4) Input Capacitance C lss - 564 - PF Output Capacitance C oss - 75 - PF Reverse Transfer Capacitance C rss VDS=15V,VGS=0V, F=1.0MHz - 66 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 9 - nS Turn-on Rise Time t r - 10 - nS Turn-Off Delay Time t d(off) - 15 - nS Turn-Off Fall Time t f VDD=30V,ID=1.5A VGS=10V,RGEN=1Ω - 5 - nS Total Gate Charge Q g - 14.2 - nC Gate-Source Charge Q gs - 1.5 - nC Gate-Drain Charge Q gd VDS=30V,ID=15A, VGS=10V - 3.6 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS=0V,IS=15A Diode Forward Current (Note 2) I S Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD TF3622 N -CHANNEL ENHANCEMENT MODE POWER MOSFET m =10A m V 1.2 Page Mar.2020 V1.02www.sztuofeng.com A25
Page Mar.2020 V1.06 PDFN3333 H L b θ E A C M e D 2.80 3. 55 0. 60 0. 25 2. 35 0. 35 0.65 0.4 K 0.25 1.29 MIN NOM MAX MIN NOM MAX MIN NOM MAX MIN NOM MAX INCH 0.65BSC 0.026BSC SYMBOL MM INCH SYMBOL MM SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD N -CHANNEL ENHANCEMENT MODE POWER MOSFET TF3622 Land Pattern ︵ Only for Ref erence ︶ www.sztuofeng.com