TF3422 TUOFENG | Alldatasheet

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V DS V GS I DM T J , T STG Symbol Typ Max 75 100 115 150 R θJL 48 60Maximum Junction-to-Lead C Steady-State °C/W Parameter Units Maximum Junction-to-Ambient A t ≤ 10s R θJA °C/W Maximum Junction-to-Ambient A Steady-State °C/W Junction and Storage Temperature Range -55 to 150 °C Thermal Characteristics WPower Dissipation T A =25°C P D 1.25 A Pulsed Drain Current B Continuous Drain Current A T A =25°C I D 2.1 Drain-Source Voltage 55 V Gate-Source Voltage ±12 V Absolute Maximum Ratings T A =25°C unless otherwise noted Parameter Maximum Units TF3422 www.sztuofeng.com Feb,2018 V1.0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS V(BR)DSS RDS(on)MAX ID 55V 0.200Ω@2.5V 2.1A N-Channel 30-V D-S MOSFET GeneralFEATURE APPLICATION

  • Load SwitchforPortable Devices
  • DC/DCConverter SOT-23 MARKING EquivalentCircuit 1.GATE 2.SOURCE 3.DRAIN *w：week code w
  • TrenchFETPower MOSFET
  • Lead freeproductis acquired
  • Surfacemountpackage 0.160Ω@4.5V AR9TF TF3422

I GSS ±100 nA V GS(th) 0.6 1.3 2 V I D(ON) 10 A 125 160 157 200 mΩ g FS 11 S V SD 0.78 1 V I S C iss 214 300 pF C oss 31 pF C rss 12.6 pF R g 1.3 3 Ω Q g 2.6 3.3 nC Q gs 0.6 nC Q gd 0.8 nC t D(on) 2.3 ns t r 2.4 ns t D(off) 16.5 ns t f 2n s t rr 20 30 ns Q rr 17 nC Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Turn-Off Fall Time SWITCHING PARAMETERS Total Gate Charge V GS =4.5V, V DS =27.5V, I D =2.1AGate Source Charge Gate Drain Charge Turn-On DelayTime V GS =10V, V DS =27.5V, R L =12Ω, R GEN =3Ω Reverse Transfer Capacitance Turn-On Rise Time Turn-Off DelayTime Gate resistance V GS =0V, V DS =0V, f=1MHz Forward Transconductance V DS =5V, I D =2.1A Diode Forward Voltage I S =1A Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance V GS =0V, V DS =25V, f=1MHzOutput Capacitance R DS(ON) Static Drain-Source On-Resistance V GS =4.5V, I D =2.1A mΩ V GS =2.5V, I D =1.5A Gate Threshold Voltage V DS GS I D =250μA On state drain current V GS =4.5V, V DS =5V V DS =44V, V GS =0V μA Gate-Source leakage current V DS =0V, V GS =±12V I F =2.1A, dI/dt=100A/μs I F =2.1A, dI/dt=100A/μs Electrical Characteristics (T J =25°C unless otherwise noted) Parameter Conditions STATIC PARAMETERS Drain-Source Breakdown Voltage I D =10mA, V GS =0V I DSS Zero Gate Voltage Drain Current A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 μs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOA curve provides a single pulse rating. Rev0: Oct 2005 TF3422 www.sztuofeng.com Feb,2018 V1.0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS

www.sztuofeng.com Feb,2018 V1.0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS SOT-23PackageOutlineDimensions SOT-23SuggestedPadLayout Symbol DimensionsInMillimeters DimensionsInInches Min Max Min Max A 0.900 1.150 0.035 0.045 0.000 0.100 0.000 0.004 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 2.250 2.550 0.089 0.100 e

0.950 TYP

0.037 TYP

1.800 2.000 0.071 0.079 L

0.550 REF

0.022 REF

0.300 0.500 0.012 0.020 θ 8° 0° TF3422