TF3420

TF3420 TUOFENG | Alldatasheet

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www.sztuofeng.com Feb,2018 V1.0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS 3 02 N-Channel 20-V D-S MOSFET GeneralFEATURE APPLICATION

• Load SwitchforPortable Devices
• DC/DCConverter SOT-23 MARKING EquivalentCircuit 1.GATE 2.SOURCE 3.DRAIN *w：week code Maximumratings (Ta=25℃ unless otherwise noted) Parameter S y mbol Value Unit Drain-SourceVoltage VDS V Gate-SourceVoltage VGS ±12 ContinuousDrainCurrent ID 6.0 PulsedDrainCurrent*1 IDM 20 A ContinuousSource-DrainDiodeCurrent IS 1 MaximumPowerDissipation PD 1.25 W ThermalResistancefromJunctiontoAmbient(t≤10s) R θJA 100 ℃/W JunctionTemperature TJ 150 StorageTemperature Tstg -55 ~+150 Note: *1.PulseWidth≤300μs,Duty cycle≤2% w
• TrenchFETPower MOSFET
• Lead freeproductis acquired
• Surfacemountpackage TF 3 02TF AN3TF V(BR)DSS RDS(on)MAX ID 20V 0.020Ω@4.5V 0.028Ω@2.5V

www.sztuofeng.com Feb,2018 V1.0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS MOSFETELECTRICAL CHARACTERISTICS Ta=25℃ unlessotherwisespecified Parameter Symbol TestCondition Min Typ Max Units Static Drain-sourcebreakdownvoltage V(BR)DSS VGS =0V,ID = 250µA 20 V Gate-sourcethresholdvoltage VGS(th) VDS =VGS,ID = 250µA 0.5 0.6 1.0 Gate-sourceleakage IGSS VDS =0V,VGS =±12V ±100 nA Zerogatevoltagedraincurrent IDSS VDS =16V,VGS =0V 100 A Drain-sourceon-stateresistancea RDS(on) VGS =4.5V,ID =6A 0. 160 0.020 Ω VGS =2.5V,ID =5A 0.025 0.028 Forwardtransconductancea gfs VDS =5V,ID =6A 25 - S Dynamicb Inputcapacitance Ciss 742 VDS =15V,VGS =0V,f=1MHz pFOutputcapacitance Coss 66 Reversetransfercapacitance Crss 78 Totalgatecharge Qg 9 nCVDS =10V,VGS =4.5V,ID =6AGate-sourcecharge Gate-draincharge Turn-ondelaytime td(on) VDD=10V,ID =1A 12.0 Risetime tr 23.0 VGEN=4.5V,Rg=6Ω ns Turn-offdelaytime td(off) 14.0 Falltime tf 9.0 Drain-sourcebodydiodecharacteristics Continuoussource-draindiodecurrent IS TC=25℃ 1.25 A Bodydiodevoltage VSD IS=1.0A 0.7 1.0 V Notes: a.PulseTest:PulseWidth<300µs,DutyCycle≤2%. b.Guaranteedbydesign, notsubjecttoproductiontesting. Qgs Qgd 2.6 n 3 02TF 4

www.sztuofeng.com Feb,2018 V1.0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS Typical Characteristics Typical Output Characteristics 0123 4 V DS , Drain-Source Voltage(V) I D , Drain Current(A) 10V, 9V,8V,7V,6V, 5V, 4V, 3V V GS =1.5V V GS =2V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) BV DSS , Normalized Drain-Source Breakdown Voltage I D =250μA, V GS =0V Static Drain-Source On-State resistance vs Drain Current 100 1000 0.01 0.1 1 10 I D , Drain Current(A) R DS(on) , Static Drain-Source On-State Resistance(mΩ) V GS =10V 1.8V 4.5V 2.5V V GS =1.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 02468 1 I DR , Reverse Drain Current(A) V SD , Source-Drain Voltage(V) Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 120 140 160 180 200 02468 1 0 Tj=25°C Tj=150°C V GS =0V Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 1.6 1.8 -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) R DS(on) , Normalized Static Drain- Source On-State Resistance V GS =4.5V, I D =6A V GS =2.5V, I D =5.0A V GS , Gate-Source Voltage(V) R DS(on) , Static Drain-Source On- State Resistance(mΩ) I D =6A I D =5.0A 3 02TF

www.sztuofeng.com Feb,2018 V1.0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS 3 02TF Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0.1 1 10 100 V DS , Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 -60 -40 -20 0 20 40 60 80 100 120 140 160 Tj, Junction Temperature(°C) V GS(th) , Normalized Threshold Voltage I D =250μA Forward Transfer Admittance vs Drain Current 0.01 0.1 100 0.001 0.01 0.1 1 10 100 I D , Drain Current(A) G FS , Forward Transfer Admittance(S) Pulsed Ta=25°C V DS =5V Gate Charge Characteristics 0 4 81 21 62 0 Qg, Total Gate Charge(nC) V GS , Gate-Source Voltage(V) V DS =10V I D =6A Maximum Safe Operating Area 0.01 0.1 100 0.01 0.1 1 10 100 V DS , Drain-Source Voltage(V) I D , Drain Current(A) DC 10ms 100ms 1ms T A =25°C, Tj=150°C,V GS =4.5 V R θ JA =90°C/W, Single Pulse 100μs Maximum Drain Current vs JunctionTemperature 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) I D , Maximum Drain Current(A) T A =25°C, V GS =4.5V

www.sztuofeng.com Feb,2018 V1.0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS 3 02TF Typical Characteristics(Cont.) Power Derating Curve 0.2 0.4 0.6 0.8 1.2 1.4 1.6 0 50 100 150 200 T A , Ambient Temperature(℃) P D , Power Dissipation(W) Mounted on FR-4 board with 1 in pad area Single Pulse Power Rating, Junction to Ambient (Note on page 1) 0.001 0.01 0.1 1 10 100 Pulse Width(s) Power (W) T J(MAX) =150°C T A =25°C R θJA =90°C/W Transient Thermal Response Curves 0.001 0.01 0.1 t , Square Wave Pulse Duration(s) Normalized Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.R θJA (t)=r(t)*R θJA 2.Duty Factor, D=t 3.T JM C DM θJC (t) 4.R θJA =90°C/W

www.sztuofeng.com Feb,2018 V1.0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS SOT-23PackageOutlineDimensions SOT-23SuggestedPadLayout Symbol DimensionsInMillimeters DimensionsInInches Min Max Min Max A 0.900 1.150 0.035 0.045 0.000 0.100 0.000 0.004 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 2.250 2.550 0.089 0.100 e

0.950 TYP

0.037 TYP

1.800 2.000 0.071 0.079 L

0.550 REF

0.022 REF

0.300 0.500 0.012 0.020 θ 8° 0° 3 02TF