TF3410 TUOFENG | Alldatasheet

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www.sztuofeng.com Feb,2018 V1.0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS 3 0 V(BR)DSS RDS(on)MAX ID 30V 0.033Ω@4.5V 5.8A 0.042Ω@2.5V N-Channel 30-V D-S MOSFET GeneralFEATURE APPLICATION

  • Load SwitchforPortable Devices
  • DC/DCConverter SOT-23 MARKING EquivalentCircuit 1.GATE 2.SOURCE 3.DRAIN *w：week code Maximumratings (Ta=25℃ unless otherwise noted) Parameter S y mbol Value Unit Drain-SourceVoltage VDS V Gate-SourceVoltage VGS ±12 ContinuousDrainCurrent ID 5.8 PulsedDrainCurrent*1 IDM 30 A ContinuousSource-DrainDiodeCurrent IS 1 MaximumPowerDissipation PD 1.4 W ThermalResistancefromJunctiontoAmbient(t≤10s) R θJA ℃/W JunctionTemperature TJ StorageTemperature Tstg -55 ~+150 Note: *1.PulseWidth≤300μs,Duty cycle≤2% w
  • TrenchFETPower MOSFET
  • Lead freeproductis acquired
  • Surfacemountpackage TF 3 0TF 0.028Ω@10V AA1TF -55 ~+150

www.sztuofeng.com Feb,2018 V1.0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS MOSFETELECTRICAL CHARACTERISTICS Ta=25℃ unlessotherwisespecified Parameter Symbol TestCondition Min Typ Max Units Static Drain-sourcebreakdownvolta g e V(BR)DSS VGS =0V,ID = 250µA 30 V Gate-sourcethresholdvolta g e VGS(th) VDS =VGS,ID = 250µA 0.5 0.8 1.0 Gate-sourceleakage IGSS VDS =0V,VGS =±12V ±100 nA Zerogatevoltagedraincurrent I DSS VDS =24V,VGS =0V 100 A Drain-sourceon-stateresistancea RDS(on) VGS =4.5V,ID =5A 0. 260 0.033 Ω VGS =2.5V,ID =4A 0.035 0.042 Forwardtransconductancea g fs VDS =5V,ID =5A S Dynamicb Inputcapacitance Ciss 825 VDS =15V,VGS =0V,f=1MHz pF Outputcapacitance Coss 100 Reversetransfercapacitance Crss Totalgatecharge Qg 1 nCVDS =10V,VGS =4.5V ,ID =5.8AGate-sourcecharge Gate-drainchar g e Turn-ondelaytime td(on) VDD=15V,RL=2.7 3.3 Risetime t r 4.8. VGS=10V,R gen =3Ω ns Turn-offdelaytime td(off) 26.0 Falltime t f 4.0 Drain-sourcebodydiodecharacteristics Continuoussource-draindiodecurrent IS TC=25℃ 2.5 A Bod y diodevolta g e V SD IS=1.0A 0.7 1.0 V Notes: a.PulseTest:PulseWidth<300µs,DutyCycle≤2%. b.Guaranteedbydesign, notsubjecttoproductiontesting. Qgs Qgd 3.1 n VGS =10V,ID =5.8A 0.023 0.028 3 0TF Ω

www.sztuofeng.com Feb,2018 V1.0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS SOT-23PackageOutlineDimensions SOT-23SuggestedPadLayout Symbol DimensionsInMillimeters DimensionsInInches Min Max Min Max A 0.900 1.150 0.035 0.045 0.000 0.100 0.000 0.004 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 2.250 2.550 0.089 0.100 e

0.950 TYP

0.037 TYP

1.800 2.000 0.071 0.079 L

0.550 REF

0.022 REF

0.300 0.500 0.012 0.020 θ 8° 0° 3 0TF