TF3401 TUOFENG | Alldatasheet

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www.sztuofeng.com ,2018 V1.0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS V(BR)DSS RDS(on)MAX ID -30V 0.060Ω@-10V -4.0A0.070Ω@-4.5V P-Channel30-V D-S MOSFET GeneralFEATURE

  • TrenchFETPower MOSFET
  • Lead freeproductis acquired
  • Surfacemountpackage APPLICATION
  • Load SwitchforPortable Devices
  • DC/DCConverter SOT-23 MARKING EquivalentCircuit A11TF w 1.GATE 2.SOURCE 3.DRAIN *w：week code Maximumratings (Ta=25℃ unless otherwise noted) Parameter S y mbol Value Unit Drain-SourceVoltage VDS -30 V Gate-SourceVolta g e VGS ±12 ContinuousDrainCurrent ID -4.0 PulsedDrainCurrent IDM -25 A MaximumPowerDissipation PD 1.2 W ThermalResistancefromJunctiontoAmbient(t≤5s) R θJA 104 ℃/W JunctionTemperature TJ 150 Stora g eTemperature Tstg -55 ~+150 Mar TF3 401 TF3 401 0.100Ω@-2.5V

www.sztuofeng.com ,2018 V1.0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS MOSFETELECTRICAL CHARACTERISTICS Ta=25℃ unlessotherwisespecified a.PulseTest:PulseWidth< 300µs,DutyCycle≤2%. b.Theseparametershavenowaytoverify. Parameter S y mbol TestCondition Min T y p Max Units Staticcharacteristics Drain-sourcebreakdownvoltage BVDSS VGS =0V,ID =-250µA -30 V Zerogatevoltagedraincurrent IDSS VDS =-24V,VGS =0V -1 µA Gate-sourceleakagecurrent I GSS VGS =±12V,VDS =0V ±100 nA Drain-sourceon-resistance(notea) R DS(on) VGS =-10V,ID =-4.0A 55 60 mΩ VGS =-4.5V,ID =-3.5A 65 70 mΩ Forwardtranconductance(notea) gFS VDS =-5V,ID =-4.0A 7 S Gatethresholdvoltage VGS(th) VDS =VGS,ID =-250µA -0.6 -1 -1.2 V Diodeforwardvolta g e notea VSD IS=-1A,VGS=0V -1.2 V D y namiccharacteristics noteb Inputcapacitance Ciss 950 pF VDS =-15V, VGS =0V,f=1MHzOutputcapacitance Coss 115 pF Reversetransfercapacitance Crss pF Switchin g Characteristics noteb Turn-ondelaytime td(on) 7.0 ns Turn-onrisetime tr VGS=-10V,VDS=-15V, 3.0 ns ,RGEN=6ΩTurn-offdela y time td(off) 30 ns Turn-offfalltime t f 12 ns Notes: Mar TF3 401 VGS =-2.5V,ID =-1.2A 95 100 mΩ ID =-4.0A

www.sztuofeng.com ,2018 V1.0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS SOT-23PackageOutlineDimensions SOT-23SuggestedPadLayout Symbol DimensionsInMillimeters DimensionsInInches Min Max Min Max A 0.900 1.150 0.035 0.045 0.000 0.100 0.000 0.004 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 2.250 2.550 0.089 0.100 e

0.950 TYP

0.037 TYP

1.800 2.000 0.071 0.079 L

0.550 REF

0.022 REF

0.300 0.500 0.012 0.020 θ 8° 0° Mar TF3 401