TF3400 TUOFENG | Alldatasheet
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VDS (V) = 30V ID = 4.8 A (VGS = 10V) RDS(ON) < mΩ (VGS = 10V) RDS(ON) < mΩ (VGS = 4.5V) RDS(ON) < 42mΩ (VGS = 2.5V) SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD Plastic-EncapsulateMOSFETS 3 00TF 4 www.sztuofeng.com Feb,2018 V1.11 V(BR)DSS RDS(on)MAX ID 30V 0.033Ω@4.5V 5.8A 0.045Ω@2.5V 0.028Ω@10V N-Channel 30-V(D-S)MOSFET SOT-23 MARKING EquivalentCircuit 1.GATE 2.SOURCE 3.DRAIN *w：week code w A01TF /SOT-23-3L GeneralFEATURE APPLICATION
- Load SwitchforPortable Devices
- DC/DCConverter
- TrenchFETPower MOSFET
- Lead freeproductis acquired
- Surfacemountpackage SOT-23 /SOT-23-3L
VGS(th) 0.6 ID(ON) 30 A mΩ mΩ gFS 10 15 S VSD 0.71 1.2 V IS 2.5 A Ciss 823 1030 pF Coss 99 pF Crss 77 pF Rg 1.2 3.6 Ω Qg 9.7 12 nC Qgs 1.6 nC Qgd 3.1 nC tD(on) 3.3 5 ns tr 4.8 7 ns tD(off) 26.3 40 ns tf 4.1 6 ns trr 16 20 ns Qrr 8.9 12 nC Gate resistance V GS=0V, VDS=0V, f=1MHz Turn-Off Fall Time Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS IF=5A, dI/dt=100A/µs VGS=0V, VDS=15V, f=1MHz SWITCHING PARAMETERS Total Gate Charge VGS=4.5V, VDS=15V, ID=5.8AGate Source Charge Gate Drain Charge Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=15V, RL=2.7Ω, RGEN=3Ω mΩ VGS=4.5V, ID=5.0A IS=1A,VGS=0V VDS=5V, ID=5.8A RDS(ON) Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage IDSS µA Gate Threshold Voltage V DS=VGS ID=250µA VDS=25V, VGS=0V VDS=0V, VGS=±12V Zero Gate Voltage Drain Current Gate-Body leakage current Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/µs Drain-Source Breakdown Voltage On state drain current ID=250µA, VGS=0V VGS=2.5V, ID=4.0A VGS=4.5V, VDS=5V VGS=10V, ID=5.8A Reverse Transfer Capacitance A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev 4 : June 2005 4535 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD 3 00TF 4 www.sztuofeng.com Feb,2018 V1. 12 1.0 V Plastic-EncapsulateMOSFETSSOT-23 /SOT-23-3L 0.8
www.sztuofeng.com Feb,2018 V1. 1 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23PackageOutlineDimensions SOT-23SuggestedPadLayout Symbol DimensionsInMillimeters DimensionsInInches Min Max Min Max A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e 0.950 TYP 0.037 TYP e1 1.800 2.000 0.071 0.079 L 0.550 REF 0.022 REF L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8° 3 00TF 4 Plastic-EncapsulateMOSFETSSOT-23 /SOT-23-3L
www.sztuofeng.com Mar ,2018 V1. 1 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23-3L PackageOutlineDimensions TF3400 SOT-23-3LSuggestedPadLayout Min. Max . Min. Max. A 1.050 1.250 0.041 0.049 A1 0.000 0.100 0.000 0.004 A2 1.050 1.150 0.041 0.045 b 0.300 0.500 0.012 0.020 c 0.100 0.200 0.004 0.008 D 2.820 3.020 0.111 0.119 E1 1.500 1.700 0.059 0.067 E 2.650 2.950 0.104 0.116 e e1 1.800 2.000 0.071 0.079 L 0.300 0.600 0.012 0.024 /g5370 °8 °0 °8 ° Symbol Dimensions In Millimeters Dimensions In Inches 0.950(BSC) 0.037(BSC) Plastic-EncapsulateMOSFETSSOT-23 /SOT-23-3L