TF32324

TF32324 TUOFENG | Alldatasheet

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 N+P Channel  Enhancement mode  Very low on-resistance  Fast Switching  Pb-free lead plating; RoHS compliant Absolute Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter Rating Unit NMOS PMOS V GS Gate-Source Voltage ±20 ±20 V V(BR)DSS Drain-Source Breakdown Voltage 30 -30 V TSTG TJ Storage and operating temperature range -55 to 175 °C IS Diode Continuous Forward Current TC =25°C Mounted on Large Heat Sink IDM Pulse Drain Current Tested② TC =25°C ID Continuous Drain Current TC =25°C A TC =100°C PD Power dissipation for Dual Operation TC =25°C R JC R JA Drain-Source Avalanche Ratings EAS Avalanche Energy, Single Pulsed mJ V DS 30 -30 V R DS(on),TYP VGS=10 V mΩ R DS(on),TYP VGS=4.5V mΩ I D PDFN5X6 Top View www.sztuofeng.com Dec,2020 V1.01 TF32324 12 14.5 16 18 16 -18 A SHENZHEN TUOFENGSEMICONDUCTOR TECHNOLOGYCO.,LTD N+P Channel Enhancement Mode Power MOSFET 18 W Thermal Resistance Junction-Ambient 30 °C/W 25 32 16 -18 A 16 -18 -14 Thermal Resistance-Junction to Case 4.5 °C/W Part ID Package Type Marking Tape and reel information TF32324 PDFN5x6 TF32324 5000pcs/Reel 50 -60 A

Symbol Parameter Condition Min Typ Max Unit Static Electrical Characteristics @ Tj= 25°C (unless otherwise stated) V(BR)DSS Drain-Source Breakdown Voltage V GS=0V ID=250μA 30 -- -- V IDSS Zero Gate Voltage Drain Current V DS=30V,VGS=0V -- -- 1 μA Zero Gate Voltage Drain Current( Tj =125℃) VDS=30V,VGS=0V -- -- 100 μA IGSS Gate-Body Leakage Current V GS=±20V,VDS=0V -- -- ±100 nA VGS(TH) Gate Threshold Voltage V DS=VGS,ID=250μA RDS(ON) Drain-Source On-State Resistance② mΩ mΩ Dynamic Electrical Characteristics @ Tj = 25°C (unless otherwise stated) Ciss Input Capacitance f=1MHz Coss Crss Qg Total Gate Charge VDS=15V,ID=10A, VGS=10V Qgs Qgd Switching Characteristics td(on) Turn on Delay Time VDD=15V, ID=3.5A, RG=3.3Ω, VGS=10V -- -- nS tr Turn on Rise Time -- -- nS td(off) Turn Off Delay Time - -- nS tf Turn Off Fall Time -- -- nS Source Drain Diode Characteristics@ Tj= 25°C (unless otherwise stated) VSD trr Reverse Recovery Time VGS=0V Qrr www.sztuofeng.com Dec,2020 V1.0 TF32324 SHENZHEN TUOFENGSEMICONDUCTOR TECHNOLOGYCO.,LTD N+P Channel Enhancement Mode Power MOSFET N Channel Electronic Characteristics 16 18 12 14VGS=10V, ID=12A -- VGS=4.5V, ID=10A -- 1.0 1.5 2.0 V di/dt=-100A/μs -- 625 -- pF Reverse Transfer Capacitance -- 72.5 -- pF Output Capacitance -- 88.3 -- pF VDS=15V,VGS=0V, -- 15 -- nC Gate Source Charge -- 3.3 -- nC Gate Drain Charge -- 2.1 -- nC -- 11 -- nS Reverse Recovery Charge -- 9 -- nC Forward on voltage I SD=12A,VGS=0V -- 0.9 1.2 V Tj=25℃,Isd=12A,

Symbol Parameter Condition Min Typ Max Unit Static Electrical Characteristics @ Tj= 25°C (unless otherwise stated) V(BR)DSS Drain-Source Breakdown Voltage V GS=0V ID=-250μA -30 -- -- V IDSS Zero Gate Voltage Drain Current V DS=-30V,VGS=0V -- -- -1 μA Zero Gate Voltage Drain Current( Tj =125℃) VDS=-30V,VGS=0V -- -- -100 μA IGSS Gate-Body Leakage Current V GS=±20V,VDS=0V -- -- ±100 nA VGS(TH) Gate Threshold Voltage V DS=VGS,ID=-250μA RDS(ON) Drain-Source On-State Resistance② mΩ mΩ Dynamic Electrical Characteristics @ Tj= 25°C (unless otherwise stated) Ciss Input Capacitance f=1MHz -- -- pF Coss Output Capacitance -- -- pF Crss Reverse Transfer Capacitance -- -- pF Qg Total Gate Charge VDS=-15V,ID=-5A, VGS=-10V -- -- nC Qgs Gate Source Charge -- -- nC Qgd Gate Drain Charge -- -- nC Switching Characteristics td(on) Turn on Delay Time VDD=-15V, RG=3.3Ω, VGS=-10V -- -- ns tr -- ns td(off) Turn Off Delay Time - -- ns tf Turn Off Fall Time -- -- ns Source Drain Diode Characteristics@ Tj= 25°C (unless otherwise stated) VSD -1.2 V trr Reverse Recovery Time VGS=0V Qrr Notes: www.sztuofeng.com Dec,2020 V1.0 TF32324 SHENZHEN TUOFENGSEMICONDUCTOR TECHNOLOGYCO.,LTD N+P Channel Enhancement Mode Power MOSFET P Channel Electronic Characteristics -1.2 -1.7 -2.2 V VGS=-10V, ID=-15A -- 14.5 16 VGS=-4.5V, ID=-10A -- 18 20 VDS=-15V,VGS=0V, 1716 227 195 6.2 5.9 Forward on voltage I SD=-15A,VGS=0V -- -0.92 di/dt=-100A/μs Tj=25℃,Isd=-15A, -- 35 -- nS Reverse Recovery Charge -- 23 -- nC Turn on Rise Time -- ID=-15A, ①Repetitive rating; pulse width limited by max. junction temperature. ② Pulse width ≤ 300μs; duty cycle≤ 2% ③Limited by TJmax, starting TJ = 25°C, L = 0.5mH,RG = 25Ω, IAS =13A, VGS =10V. Part not recommended for use above this value ④Limited by TJmax, starting TJ = 25°C, L = 0.5mH,RG = 25Ω, IAS =-15A, VGS =-10V. Part not recommended for use above this value 3

www.sztuofeng.com Dec,2020 V1.0 TF32324 SHENZHEN TUOFENGSEMICONDUCTOR TECHNOLOGYCO.,LTD N+P Channel Enhancement Mode Power MOSFET N Channel characteristics curve Fig.1 Power Dissipation Fig.2 Typical output Characteristics Fig.3 Threshold Voltage V.S Junction Temperature Fig.4 Resistance V.S Drain Current Fig.5 On-Resistance VS Gate Source Voltage Fig.6 On-Resistance V.S Junction Temperature 0.2 0.4 0.6 0.8 1.2 0 50 100 150 200 Power Dissipation Pd/Pd MAX.% Temperature (。C) 100 150 200 0 0.5 1 1.5 2 Drain Current (A) Drain-Source voltage (V) 0.5 1.5 2.5 -50 50 150 Vgs(th ) Junction Temperature ON Resistance Drain Current(-A) 3 5 7 9 VGS( V ) 0.4 0.8 1.2 1.6 -50 0 50 100 150 Normalized ON-Resistance Temperature VGS=10V VGS=4.5V 10 15 20 25 RDson(mΩ)

www.sztuofeng.com Dec,2020 V1.0 TF32324 SHENZHEN TUOFENGSEMICONDUCTOR TECHNOLOGYCO.,LTD N+P Channel Enhancement Mode Power MOSFET 0 0.5 1 1.5 2 Drain Current (A) Drain-Source voltage (V) P Channel characteristics curve Fig.1 Power Dissipation Derating Curve Fig.2 Typical output Characteristics Fig.3 Threshold Voltage V.S Junction Temperature Fig.4 Resistance V.S Drain Current Fig.5 On-Resistance VS Gate Source Voltage Fig.6 On-Resistance V.S Junction Temperature 0.2 0.4 0.6 0.8 1.2 0 50 100 150 200 Power Dissipation Pd/Pd MAX.% Temperature (。C) -2.5 -1.5 -0.5 -50 50 150 Vgs(th )d Junction Temperature 4 6 8 10 RDson(mΩ) VGS( -V ) 0.5 1.5 -50 0 50 100 150 Normalized ON-Resistance Temperature VGS=-10V VGS=-4.5V ON Resistance Drain Current(A) 15 205

www.sztuofeng.com Dec,2020 V1.0 TF32324 SHENZHEN TUOFENGSEMICONDUCTOR TECHNOLOGYCO.,LTD N+P Channel Enhancement Mode Power MOSFET Test Circuit Fig.1 Switching Time Measurement Circuit Fig.2 Gate Charge Waveform Fig.3 Switching Time Measurement Circuit Fig.4 Gate Charge Waveform Fig.5 Avalanche Measurement Circuit Fig.6 Avalanche Waveform

PDFN5*6 Package Outline Data Unit: mm www.sztuofeng.com Dec,2020 V1.0 TF32324 SHENZHEN TUOFENGSEMICONDUCTOR TECHNOLOGYCO.,LTD N+P Channel Enhancement Mode Power MOSFET