TF30P02 TUOFENG | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

  • Ordering Information:
  • Absolute Maximum Ratings（TC =25℃） Parameter Symbol Rating Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current ID@TC=25℃ -30 A ID@TC=75℃ -21 A ID @TC=100℃ -18 A Pulsed Drain Current ① IDM -65 A Total Power Dissipation② PD 15 W Total Power Dissipation(TA=25℃) PD@TA=25℃ 1.0 W Operating Junction Temperature T J -55 to 150 ℃ Storage Temperature TSTG -55 to 150 ℃ Single Pulse Avalanche Energy@L=0.1mH EAS 45 mJ Avalanche Current@L=0.1mH IAS -30 A
  • General Description The TF30P02 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .
  • Features Advance high cell density Trench technology Low RDS(ON) to minimize conductive loss Low Gate Charge for fast switching Low Thermal resistance
  • Application Load Switches DC/DC BLDC Motor driver
  • Product Summary Part NO. TF30P02 Marking1 Marking2 TF:tuofeng; Y:year code; XX:Week; AA:device code; Basic ordering unit (pcs) 2500 TF30P02 Shenzhen Tuofeng Semiconductor Technology Co., Ltd P -CHANNEL ENHANCEMENT MODE POWER MOSFET 1www.sztuofeng.com Feb 2022 V1.0 VDS =-20V ID=-30A R R DSON(-4.5V typ) DSON(-2.5V typ) =12.0mΩ =16.0mΩ D G S TO-252 D G S TO-251 G D S 30P02 TFYXXAA 30P02 TFYXXAA DD 30N02:TF30P02
  • Thermal resistance Parameter Symbol Min. Typ. Max. Unit Thermal resistance, junction - case② RthJC - - 4.5 °C/W Thermal resistance, junction - ambient RthJA - - 62.5 °C/W Soldering temperature, wave soldering for 10s Tsold - - 265 °C
  • Electronic Characteristics Parameter Symbol Condition Min. Typ Max. Unit Drain-Source Breakdown Voltage BVDSS VGS =0V,ID =-250uA -20 V Gate Threshold Voltage VGS(TH) VGS =V DS, ID =-250uA -0.45 -0.70 -1.00 V Drain-Source Leakage Current IDSS VDS=-20V, VGS =0V -1.0 uA Gate- Source Leakage Current IGSS VGS=±12V ,VDS =0V ±100 nA Static Drain-source On Resistance RDS(ON) VGS=-4.5V, ID=-15A 12.0 15.0 mΩ VGS=-2.5V, ID=-10A 16.0 20.0 mΩ Forward Transconductance gFS VDS =-10V, ID=-10A 10 s Source-drain voltage VSD Is=-10A 0.88 1.28 V
  • Electronic Characteristics Parameter Symbol Condition Min. Typ Max. Unit Input capacitance Ciss VGS=0V, VDS=-10V f = 1MHz - 1545 - pF Output capacitance Coss - 168.7 - Reverse transfer capacitance Crss - 148.1 -
  • Gate Charge characteristics(Ta = 25℃) Parameter Symbol Condition Min. Typ Max. Unit Total gate charge Qg VDD =-10V ID = -10A VGS = -4.5V - 24.5 - nC Gate - Source charge Qgs - 3.69 - Gate - Drain charge Qgd - 4.58 - Note: ① Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% ; ② Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate； Shenzhen Tuofeng Semiconductor Technology Co., Ltd P -CHANNEL ENHANCEMENT MODE POWER MOSFET 2www.sztuofeng.com Feb 2022 V1.0 TF30P02

Fig.1 Gate-Charge Characteristics Fig.2 Capacitance Characteristics Fig.2 Power Dissipation Fig.3 Typical output Characteristics Fig.4 Threshold Voltage V.S Junction Temperature Fig.5 Resistance V.S Drain Current 0.5 1.5 2.5 3.5 4.5 0 5 10 15 20 25 4000 3000 2000 1000 200 100 0 5 10 15 0.2 0.4 0.6 0.8 1.2 0 50 100 150 200 Power Dissipation Pd/Pd MAX.% Temperature (。C) 100 150 200 0 0.5 1 1.5 2 Drain Current (A) Drain-Source voltage (V) -0.5 -50 50 150 Vgs(th )d Junction Temperature 25 0 5 10 Drain Current(A) 15 20 ON Resistance VGS=-4.5V VGS=-2.5V -VGS Ciss Coss Crss Shenzhen Tuofeng Semiconductor Technology Co., Ltd P -CHANNEL ENHANCEMENT MODE POWER MOSFET 3www.sztuofeng.com Feb 2022 V1.0 TF30P02

Fig.8 Switching Time Measurement Circuit Fig.9 Gate Charge Waveform Fig.10 Switching Time Measurement Circuit Fig.11 Gate Charge Waveform 1 2 3 4 5 RDson(mΩ) VGS( -V ) 0.4 0.8 1.2 1.6 -50 0 50 100 150 Normalized ON-Resistance Temperature Shenzhen Tuofeng Semiconductor Technology Co., Ltd P -CHANNEL ENHANCEMENT MODE POWER MOSFET 4www.sztuofeng.com Feb 2022 V1.0 Fig.6 On-Resistance VS Gate Source Voltage Fig.7 On-Resistance V.S Junction Temperature TF30P02

Shenzhen Tuofeng Semiconductor Technology Co., Ltd P -CHANNEL ENHANCEMENT MODE POWER MOSFET 5www.sztuofeng.com Feb 2022 V1.0

Package Information

UNIT: mm 0.25 GAUGE PLANE L VIEW A SEATING PLANE L4 L3D E e H A SEE VIEW A b c SYMBOL MIN. MAX. 2.39 4.95 5.46 0.46 0.61 0.13 5.33 A c D E MILLIMETERS b 0.50 0.89

2.29 BSC

4.57 6.35 6.73 6.22

0.090 BSC

MIN. MAX. INCHES 0.094 0.020 0.035 0.195 0.215 0.018 0.024 0.210 0.180 0.250 0.265 2.18 0.245 0.086 0.005 0.035 0.070 0.410 H L e 9.40 0.90 0.46 0.89 1.78 10.41 0.370 0.035 0.018 0.040L4 1.02 0.1503.81 0.89 2.03 0.035 0.080 0 8°0° 8°0° 6.00 6.00 0.236 0.236 6.8 MIN. 3 MIN. 6.25 MIN. 6.6 1.5 MIN. 2.286 4.572 TO-252 TF30P02