TF30115 TUOFENG | Alldatasheet

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Technical content

N-Channel Enhancement Mode Power MOSFET

Description

The TF30115 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. General Features

  • V DS = 30V ,ID = 115A RDS(ON) < 6.0mΩ @ VGS=4.5V RDS(ON) < 4.0mΩ @ VGS=10V
  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package Application
  • Battery Switch
  • Load switch
  • Power management S Schematic diagram Pin assignment Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V TA =25℃ 115 Continuous Drain Current (TJ =150℃) TA =70℃ ID A Drain Current-Pulsed (Note 1) IDM 180 A Maximum Power Dissipation PD 60 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 2.0 /W℃ SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD PDFN 5x6 Plastic-Encapsulate MOSFETS TF30115 TF 30115 CYWP S S S G DDD D Pin 1 PIN1 Top View Bottom View PDFN5X6-8L Y :year code W :week code www.sztuofeng.com Jun 2020 V1.0 D G

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Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS=0V ID=250μA 30 - - V Zero Gate Voltage Drain Current I DSS V DS=30V,VGS=0V - - 1 μA Gate-Body Leakage Current I GSS V GS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS=VGS,ID=250μ 1.0 VGS=10V, ID 2.8 Drain-Source On-State Resistance R DS(ON) VGS=5V, ID=20A mΩ Forward Transconductance g FS V DS=5V,ID=20A Dynamic Characteristics (Note4) Input Capacitance C lss Output Capacitance C oss Reverse Transfer Capacitance C rss VDS=15V,VGS=0V, F=1.0MHz Switching Characteristics (Note 4) Turn-on Delay Time t d(on) Turn-on Rise Time t r Turn-Off Delay Time t d(off) Turn-Off Fall Time t f VDD=10V,ID=20A VGS=10V,RGEN=3.0Ω Total Gate Charge Q g Gate-Source Charge Q gs Gate-Drain Charge Q gd VDS=10V,ID=20A, VGS=10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS=0V,IS=20A Diode Forward Current (Note 2) I S Reverse Recovery Time trr Reverse Recovery Charge Qrr TJ = 25°C, IF = 20A di/dt = 100A/μs(Note3) Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition：Tj=25℃,VDD=15V,VG=10V,L=0.5mH,Rg=25Ω SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD PDFN 5x6 Plastic-Encapsulate MOSFETS =20A 4.0- 4.7 6.0- www.sztuofeng.com Jun 2020 V1.0 A V 1.7 2.0 S- - 20 V- - 1.2 A- - 115 PF- - 2225 PF- - 986 PF- - 100 nS- - 9 nS- - 35 nS- - 5 nS- - 15 nC- - 6.0 nC- - 5.5 nC- - 29.5 nS- - 24 uC- - 30 TF30115

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SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD PDFN 5x6 Plastic-Encapsulate MOSFETS www.sztuofeng.com Jun 2020 V1.0 Figure 1 Output Characteristics Figure 2 Transfer Characteristics Figure 3 On-resistance vs.gate voltage Figure 4 On-resistance vs.drain current Figure 5 Source-to-drain diode forwrd Figure 6 Capacitance vs drain-to-source characteristics Voltage TF30115 0 10 RDS(ON) (mΩ) VGS =10V VGS =4.5V 20 30 40

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SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD PDFN 5x6 Plastic-Encapsulate MOSFETS www.sztuofeng.com Jun 2020 V1.0 Figure 7 Gate-to-source voltage vs.gate Figure 8 Maximum drain current vs.case charge temperature Figure 9 Maximum drain current vs. ambient temperature TF30115

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SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD PDFN 5x6 Plastic-Encapsulate MOSFETS www.sztuofeng.com Jun 2020 V1.0 Resistive switching time test circuit & waveforms Gate charge test circuit & waveforms Peak diode recovery dv/dt circuit & waveforms Unclamped inductive switching test circuit & waveforms TF30115

6 Page

Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 0.900 1.000 0.035 0.039 A3 0.254REF. 0.010REF. D 4.944 5.096 0.195 0.201 E 5.974 6.126 0.235 0.241 D1 3.910 4.110 0.154 0.162 E1 3.375 3.575 0.133 0.141 D2 4.824 4.976 0.190 0.196 E2 5.674 5.826 0.223 0.229 k 1.190 1.390 0.047 0.055 b 0.350 0.450 0.014 0.018 e 1.270TYP. 0.050TYP. L 0.559 0.711 0.022 0.028 L1 0.424 0.576 0.017 0.023 H 0.574 0.726 0.023 0.029 θ 10° 12° 10° 12° SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD PDFN 5x6 Plastic-Encapsulate MOSFETS www.sztuofeng.com Jun 2020 V1.0 TF30115