TF2323 TUOFENG | Alldatasheet

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www.sztuofeng.com Feb,2018 V1.0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS P-Channel15-V D-S MOSFET GeneralFEATURE

  • TrenchFETPower MOSFET
  • Lead freeproductis acquired
  • Surfacemountpackage APPLICATION
  • Load SwitchforPortable Devices
  • DC/DCConverter SOT-23 MARKING EquivalentCircuit w 1.GATE 2.SOURCE 3.DRAIN *w：week code Maximumratings (Ta=25℃ unless otherwise noted) Parameter S y mbol Value Unit Drain-SourceVoltage VDS -15 V Gate-SourceVoltage VGS ±10 ContinuousDrainCurrent ID -4.7 PulsedDrainCurrent IDM -20 A ContinuousSource-DrainDiodeCurrent IS -1.4 MaximumPowerDissipation PD 1 W ThermalResistancefromJunctiontoAmbient(t≤5s) R θJA 74 ℃/W JunctionTemperature TJ 150 StorageTemperature Tstg -55 ~+150 TF2323 TF2323 V(BR)DSS RDS(on)MAX ID -15V -4.7A 0.035Ω@-4.5V 0.048Ω@-2.5V 0.060Ω@-1.8V D32TF

www.sztuofeng.com Feb,2018 V1.0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS MOSFETELECTRICAL CHARACTERISTICS Ta=25℃ unlessotherwisespecified Parameter Symbol TestCondition Min Typ Max Units Static Drain-sourcebreakdownvolta g e V(BR)DSS VGS =0V,ID =-250µA -15 V Gate-sourcethresholdvolta g e VGS(th) VDS =VGS,ID =-250µA -0.4 -0.7 Gate-sourceleakage IGSS VDS =0V,VGS =±8V ±100 nA Zerogatevoltagedraincurrent I DSS VDS =-12V,VGS =0V -100 nA Drain-sourceon-stateresistancea RDS(on) VGS =-4.5V,ID =-4.7A 0.033 0.035 Ω VGS =-2.5V,ID =-4.1A 0.045 0.048 VGS =-1.8V,ID =-2.0A 0.055 0.060 Forwardtransconductancea g fs VDS =-5V,ID =-2.0A 5.0 S Dynamicb Inputcapacitance Ciss 740 pF Outputcapacitance Coss 290 Reversetransfercapacitance Crss 190 Totalgatecharge Qg 7.8 nCGate-sourcecharge Qgs 1.2 Gate-drainchar g e Qgd 1.6 Gateresistance Rg f=1MHz 1.9 19 Ω Turn-ondela y time td(on) 12.0 Risetime t r 35.0 ns Turn-offdelaytime td(off) 30.0 Falltime t f 10.0 Drain-sourcebodydiodecharacteristics Continuoussource-draindiodecurrent IS TC=25℃ -1.6 A Bodydiodevoltage V SD IS=-1.6A -0.8 -1.2 V Notes: a.PulseTest:PulseWidth<300µs,DutyCycle≤2%. b.Guaranteedbydesign, notsubjecttoproductiontesting. V DS =-4V,V GS =0V, F=1.0MHz V DD =-4V,I D =-3.3A , R L =-1.2Ω,V GEN =-4.5V,R g =1Ω V DS =-4V,I D =-4.7A,V GS =-4.5V TF2323

www.sztuofeng.com Feb,2018 V1.0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS SOT-23PackageOutlineDimensions SOT-23SuggestedPadLayout Symbol DimensionsInMillimeters DimensionsInInches Min Max Min Max A 0.900 1.150 0.035 0.045 0.000 0.100 0.000 0.004 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 2.250 2.550 0.089 0.100 e

0.950 TYP

0.037 TYP

1.800 2.000 0.071 0.079 L

0.550 REF

0.022 REF

0.300 0.500 0.012 0.020 θ 8° 0° TF2323