TF2300 TUOFENG | Alldatasheet

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Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage V DS 20 V Gate-Source Voltage V GS 10 V Drain-Current -Continuous * T J=125 ID 6.0 A -Pul s ed IDM 20 A Power Dissipation * P D 1.25 W Thermal Resistance,Junction- to-Ambient R thJA 100 /W Operating Junction and Storage Temperature Range Tj.Tstg -55 to 150 * Surface Mounted on FR 4 Board ,t10 sec. SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS TF2300 N-Channel 20-V(D-S)MOSFET GeneralFEATURE APPLICATION

  • Load SwitchforPortable Devices
  • DC/DCConverter SOT-23 MARKING EquivalentCircuit 1.GATE 2.SOURCE 3.DRAIN *w：week code w
  • TrenchFETPower MOSFET
  • Lead freeproductis acquired
  • Surfacemountpackage C009T TF2300 www.sztuofeng.com Feb,2018 V1.01 V(BR)DSS RDS(on)MAX 0.022Ω@4.5V ID 20V 6A 0.030Ω@2.5V

Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain-Source Breakdown Voltage V DSS VGS=0V,ID=250uA 20 V Zero Gate Voltage Drain Current IDSS V DS =16V,V GS =0V 1 uA Gate-Body Leakage I GSS VGS= 10V,VDS=0V 100 nA Gate Threshold V oltage * V GS(th) V GS =VDS ,ID=250uA 0.5 0.65 1.0 V V GS =4.5V,ID=5.0A 22 25 m V GS =2.5V,ID=4.0A 30 32 m On-State Drain Current * ID(ON) V DS =5V,VGS =4.5V 5 A Forward Transconductance * g FS V DS =15V,ID= 5A 30 S Input Capacitance C ISS 888 pF Output Capacitance C OSS 144 pF Reverse Transfer Capacitance C RSS 115 pF Turn-On Delay Time t D(on) 31.8 ns Rise Time t r 14.5 ns Turn-Off Delay Time t D(off) 50.3 ns Fall Time t f 31.9 ns Total Gate Charge Q g 16.8 nC Gate-S ource Charge Q gs 2.5 nC Gate-Drain Charge Q gd 5.4 nC Drain-Source Diode Forward Current * I S 1.25 A Diode Forward V oltage V SD V GS =0V,IS =1.25A 0.825 1.3 V * Pulse Test:Pulse Width 300 ,Duty Cycle 2% VDS = 10V, ID =3 . 5 A , VGS =4 . 5 V RDS(ON)Drain- Source on-state Resistance * VDD=10V,ID=1A,VGS=4.5V,RL=10 ,RGEN=6 VDS = 15V, VGS = 0V,f =1.0MHZ SMD Type ICSMD Type MOSFET SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS TF2300 www.sztuofeng.com Feb,2018 V1.02

I Drain Current (A) Transfer Characteristics T J =-55°C T J =25°C T J =125°C V GS - Gate-to-Source Voltage (V) -50 -25 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 Threshold Voltage vs. Junction Temperature Tj - Junction Temperature (°C) V GS(th)- Threshold Voltage (V) (Normalized) I DS =250uA I D - Drain Current (A) V GS =1.5V Output Characteristics I D -Drain Current (A) V GS =3,4.5,6,7,8V V GS =2V V DS - Drain-to-Source Voltage (V) V GS =1V SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS TF2300 www.sztuofeng.com Feb,2018 V1.03 On-Resistance vs. Drain Current

0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0 5 10 15 20 125 250 375 500 625 750 Typical Characteristics (Cont.) -50 -25 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 R DS(ON) -On-Resistance (Ω) (Normalized) On-Resistance vs. Junction Temperature V GS =10V I D =5A T J - Junction Temperature (°C) V DS - Drain-to-Source Voltage (V) Capacitance Capacitance (pF) Ciss Coss Crss V GS - Gate-to-Source Voltage (V) R DS(ON) -On-Resistance (Ω) I D =5A On-Resistance vs. Gate-to-Source Voltage Gate Charge Q G - Gate Charge (nC) V GS -Gate-Source Voltage (V) Frequency=1MHz 0 2 4 6 8 10 12 14 16 18 V DS =10V I D =5A www.sztuofeng.com Feb,2018 V1.04 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS TF2300

1E-4 1E-3 0.01 0.1 1 10 100 0.01 0.1 Typical Characteristics (Cont.) Power (W) Single Pulse Power Time (sec) Square Wave Pulse Duration (sec) Source-Drain Diode Forward Voltage I S -Source Current (A) T J =150°C T J =25°C V SD -Source-to-Drain Voltage (V) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedence, Junction to Ambient 1.Duty Cycle, D=t1/t2 2.Per Unit Base=R thJA =100°C/W 3.T JM A DM Z thJA Duty Cycle=0.5 D=0.2 D=0.1 D=0.05 D=0.02 SINGLE PULSE 0.01 0.1 1 10 100 D=0.01 www.sztuofeng.com Feb,2018 V1.05 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS TF2300

www.sztuofeng.com Feb,2018 V1.0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS SOT-23PackageOutlineDimensions SOT-23SuggestedPadLayout Symbol DimensionsInMillimeters DimensionsInInches Min Max Min Max A 0.900 1.150 0.035 0.045 0.000 0.100 0.000 0.004 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 2.250 2.550 0.089 0.100 e

0.950 TYP

0.037 TYP

1.800 2.000 0.071 0.079 L

0.550 REF

0.022 REF

0.300 0.500 0.012 0.020 θ 8° 0° TF2300