TF207N TUOFENG | Alldatasheet
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www.sztuofeng.com SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD N-Channel 20-V D-S MOSFET SOT-23-3L 1.GATE 2.SOURCE 3.DRAIN w TF207N 207N SOT-23-3LPlastic-EncapsulateMOSFETS TF207N Y Sep 2019 V1.0 ABSOLUTE MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage V DS Gate-Source Voltage V GS ±12 V Continuous Drain Current I D A Pulsed Drain Current (note 1) I DM 25 A Thermal Resistance from Junction to Ambient (note 2) R θJA 100 ℃/W Junction Temperature T J 150 ℃ Storage Temperature T STG -55~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) T L 260 ℃ V V(BR)DSS RDS(on) ID 20V 0.013Ω @ 4.5V 6.0A 0.015Ω @ 2.5V MARKING EquivalentCircuit FEATURE z TrenchFET Power MOSFET z Excellent R DS(on) z Low Gate Charge z High Power and Current Handi ng Capability z Surface Mount Package APPLICATION z Load Switch z Power Management Max Y :year code W :week code
www.sztuofeng.com SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD MOSFETELECTRICAL CHARACTERISTICS SOT-23-3LPlastic-EncapsulateMOSFETS TF207N Sep 2019 V1.0 Ta=25℃ unlessotherwisespecified Parameter Symbol Test Condition Min Typ Max Unit STATIC CHARACTERICTISCS Drain-source breakdown voltage V (BR)DSS V GS = 0V, I D =250µA 20 V Zero gate voltage drain current I DSS V DS =18V,V GS = 0V Gate-body leakage current I GSS V GS =±12V, V DS = 0V ±100 nA Gate threshold voltage (note 3) V GS(th) V DS GS , I D =250µA 0.5 V Drain-source on-resistance (note 3) R DS(on) V GS =4.5V, I D =6A m Ω V GS =2.5V, I D =5A 18 m Ω Forward tranconductance (note 3) g FS V DS =5V, I D =6A 10 S Diode forward voltage (note 3) V SD I S =2.00A, V GS = 0V 1.0 V DYNAMIC CHARACTERICTISCS (note4) Input Capacitance C iss V DS =10V,V GS =0V,f =1MHz 615 pF Output Capacitance C oss 150 pF Reverse Transfer Capacitance C rss 120 pF SWITCHING CHARACTERICTISCS (note 4) Turn-on delay time t d(on) 7.2 ns Turn-on rise time t r 13 ns Turn-off delay time t d(off) 29 ns Turn-off fall time t f 11 ns Total Gate Charge Q g V DS =10V,V GS =4.5V,I D =6A 12 nC Gate-Source Charge Q gs 1.2 nC Gate-Drain Charge Q gd 3.0 nC Notes : 1.Repetitive rating：Pluse width limited by maximum junction temperature 2.Surface Mounted on FR4 board，t≤10 sec. 3. Pulse test : Pulse width≤300μs, duty cycle≤2%. 4. Guaranteed by design, not subject to production. 1.0 13 14 V GS =5V, V DS =10V, R L =1.4Ω, R GEN =3Ω 100 nA
www.sztuofeng.com SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23-3LPackageOutlineDimensions SOT-23-3LSuggestedPadLayout SOT-23-3LPlastic-EncapsulateMOSFETS Min. Max . Min. Max. A 1.050 1.250 0.041 0.049 A1 0.000 0.100 0.000 0.004 A2 1.050 1.150 0.041 0.045 b 0.300 0.500 0.012 0.020 c 0.100 0.200 0.004 0.008 D 2.820 3.020 0.111 0.119 E1 1.500 1.700 0.059 0.067 E 2.650 2.950 0.104 0.116 e e1 1.800 2.000 0.071 0.079 L 0.300 0.600 0.012 0.024 /g5370 °8 °0 °8 ° Symbol Dimensions In Millimeters Dimensions In Inches 0.950(BSC) 0.037(BSC) TF207N Sep 2019 V1.0