TF2026 TUOFENG | Alldatasheet

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www.sztuofeng.com Feb,2018 V1.0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS V(BR)DSS RDS(on)MAX ID -16V 0.060Ω@-4.5V -3.2A 0.080Ω@-2.5V P-Channel16-V D-S MOSFET GeneralFEATURE

  • TrenchFETPower MOSFET
  • Lead freeproductis acquired
  • Surfacemountpackage APPLICATION
  • Load SwitchforPortable Devices
  • DC/DCConverter SOT-23 MARKING EquivalentCircuit w 1.GATE 2.SOURCE 3.DRAIN *w：week code Maximumratings (Ta=25℃ unless otherwise noted) Parameter S y mbol Value Unit Drain-SourceVoltage VDS -16 V Gate-SourceVoltage VGS ±12 ContinuousDrainCurrent ID -3.2 PulsedDrainCurrent IDM -15 A ContinuousSource-DrainDiodeCurrent IS -1.4 MaximumPowerDissipation PD 1 W ThermalResistancefromJunctiontoAmbient(t≤5s) R θJA 125 ℃/W JunctionTemperature TJ 150 StorageTemperature Tstg -55 ~+150 TF2026 TF2026 264TF

www.sztuofeng.com Feb,2018 V1.0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS MOSFETELECTRICAL CHARACTERISTICS Ta=25℃ unlessotherwisespecified Parameter Symbol TestCondition Min Typ Max Units Static Drain-sourcebreakdownvolta g e V(BR)DSS VGS =0V,ID =-250µA -16 V Gate-sourcethresholdvolta g e VGS(th) VDS =VGS,ID =-250µA -0.5 -0.7 Gate-sourceleakage IGSS VDS =0V,VGS =±10V ±100 nA Zerogatevoltagedraincurrent I DSS VDS =-15V,VGS =0V -1 µA Drain-sourceon-stateresistancea RDS(on) VGS =-4.5V,ID =-3.2A 0.045 0.060 Ω VGS =-2.5V,ID =-2.0A 0.070 0.080 Forwardtransconductancea gfs VDS =-5V,ID =-2.0A 5.0 S Dynamicb Inputcapacitance Ciss 405 VDS =-10V,VGS =0V,f=1MHz pF Outputcapacitance Coss 112 Reversetransfercapacitance Crss Totalgatecharge Qg 9.0 nCVDS =-10V,VGS =-4.5V,ID =-2.5AGate-sourcecharge Qgs 1.0 Gate-draincharge Qgd 2.5 Gateresistance Rg f=1MHz 7.0 Ω Turn-ondelaytime td(on) VDD=-10V, 11.0 Risetime t r 35.0 RL=2.9Ω, ns Turn-offdela y time td(off) 30.0 VGEN=-4.5V,Rg=10Ω Falltime t f 10.0 Drain-sourcebodydiodecharacteristics Continuoussource-draindiodecurrent IS TC=25℃ -1.4 A Pulsediodeforwardcurrenta ISM -10 Bod y diodevolta g e V SD IS=-3.0A -0.8 -1.2 V Notes: a.PulseTest:PulseWidth<300µs,DutyCycle≤2%. b.Guaranteedbydesign, notsubjecttoproductiontesting. TF2026

www.sztuofeng.com Feb,2018 V1.0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS SOT-23PackageOutlineDimensions SOT-23SuggestedPadLayout Symbol DimensionsInMillimeters DimensionsInInches Min Max Min Max A 0.900 1.150 0.035 0.045 0.000 0.100 0.000 0.004 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 2.250 2.550 0.089 0.100 e

0.950 TYP

0.037 TYP

1.800 2.000 0.071 0.079 L

0.550 REF

0.022 REF

0.300 0.500 0.012 0.020 θ 8° 0° TF2026