TF2015 TUOFENG | Alldatasheet

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www.sztuofeng.com SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS TF2015 TF2015P-Channel20-V D-S MOSFET GeneralFEATURE

  • TrenchFETPower MOSFET
  • Lead freeproductis acquired
  • Surfacemountpackage APPLICATION
  • Load SwitchforPortable Devices
  • DC/DCConverter SOT-23 MARKING EquivalentCircuit 338T w 1.GATE 2.SOURCE 3.DRAIN *w：week code Maximumratings (Ta=25℃ unless otherwise noted) Parameter S y mbol Value Unit Drain-SourceVoltage VDS -20 V Gate-SourceVolta g e VGS ±8 ContinuousDrainCurrent ID -2.7 PulsedDrainCurrent IDM -13 A MaximumPowerDissipation PD 0.9 W ThermalResistancefromJunctiontoAmbient(t≤5s) R θJA 138 ℃/W JunctionTemperature TJ 150 Stora g eTemperature Tstg -55 ~+150 ,2018 V1.0 Apr V(BR)DSS RDS(on)MAX ID -20V 0.100Ω@-4.5V -2.7A 0.145Ω@-2.5V

www.sztuofeng.com ,2018 V1.0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS TF2015 MOSFETELECTRICAL CHARACTERISTICS Ta=25℃ unlessotherwisespecified a.PulseTest:PulseWidth< 300µs,DutyCycle≤2%. b.Theseparametershavenowaytoverify. Parameter S y mbol TestCondition Min T y p Max Units Staticcharacteristics Drain-sourcebreakdownvoltage BVDSS VGS =0V,ID =-250µA -16 V Zerogatevoltagedraincurrent IDSS VDS =-15V,VGS =0V -1 µA Gate-sourceleakagecurrent I GSS VGS =±12V,VDS =0V ±100 nA VGS =-4.5V,ID =-2.7A 90 100 mΩ Drain-sourceon-resistance notea R DS(on) VGS =-2.5V,ID =-2.2A 130 145 mΩ Forwardtranconductance notea g FS VDS =-5V,ID =-1.0A 6.0 S Gatethresholdvoltage VGS(th) VDS =VGS,ID =-250µA -0.4 -0.7 -1 V Diodeforwardvoltage(notea) VSD IS=-2A,VGS=0V 1.2 V Dynamiccharacteristics(noteb) Inputcapacitance Ciss 325 pF VDS =-6V,VGS =-0V,f=1MHzOutputcapacitance Coss pF Reversetransfercapacitance Crss pF SwitchingCharacteristics(noteb) Turn-ondela y time td(on) 9.0 ns Turn-onrisetime tr VGS=-6V,VDS=-4.5V, 5.0 ns RL=5Ω,RGEN=3ΩTurn-offdelaytime td(off) 28.2 ns Turn-offfalltime t f 13.5 ns TotalGateCharge Qg 3.2 nC Gate-SourceCharge Qgs VDS =-6V,VGS =-0V,ID =-2.0A 0.6 nC Gate-DrainCharge Qgd 0.9 nC Notes: Apr

www.sztuofeng.com ,2018 V1.0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS TF2015 SOT-23PackageOutlineDimensions SOT-23SuggestedPadLayout Symbol DimensionsInMillimeters DimensionsInInches Min Max Min Max A 0.900 1.150 0.035 0.045 0.000 0.100 0.000 0.004 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 2.250 2.550 0.089 0.100 e

0.950 TYP

0.037 TYP

1.800 2.000 0.071 0.079 L

0.550 REF

0.022 REF

0.300 0.500 0.012 0.020 θ 8° 0° Apr