TF130N04S TUOFENG | Alldatasheet

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Technical content

  • Package Marking and Ordering Information:
  • Absolute Maximum Ratings（TC =25℃） Parameter Symbol Rating Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID@TC=25℃ 10 A ID@TC=75℃ 8.0 A ID@TC=100℃ 6.0 A Pulsed Drain Current ① IDM 30 A Total Power Dissipation PD@TC=25℃ 3.6 W Total Power Dissipation PD@TA=25℃ 1.5 W Operating Junction Temperature T J -55 to 150 ℃ Storage Temperature TSTG -55 to 150 ℃ Single Pulse Avalanche Energy EAS 40 mJ
  • General Description The TF130N04S combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications .
  • Features Advance high cell density Trench technology Low RDS(ON) to minimize conductive loss Low Gate Charge for fast switching Dual DIE in one package
  • Application Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems
  • Product Summary VDS =40V RDS(ON) =13mΩ ID =10A Part NO. TF130N04S Marking 130N04S Packing Information Basic ordering unit (pcs) 4000 TF130N04S Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 1www.sztuofeng.com Feb 2021 V1.0 --- SOP-8L G S S S D D D D PIN1
  • Thermal resistance Parameter Symbol Min. Typ. Max. Unit Thermal resistance, junction - case RthJC 2.5 °C/W Thermal resistance, junction - ambient RthJA - - 75 °C/W Soldering temperature, wavesoldering for 8 s Tsold - - 265 °C
  • Electronic Characteristics Parameter Symbol Condition Min. Typ Max. Unit Drain-Source Breakdown Voltage BVDSS VGS =0V,ID =250uA 40 V Gate Threshold Voltage VGS(TH) VGS =V DS, ID =250uA 1.2 2.5 V Drain-Source Leakage Current IDSS VDS=40 VGS =0V 1.0 uA Gate- Source Leakage Current IGSS VGS=± 20V ,VDS =0V ±100 nA Static Drain-source On Resistance RDS(ON) VGS=10V, ID=10A 13 18 mΩ VGS=4.5V, ID=6A 14 mΩ Forward Transconductance gFS VDS =25V, ID=10A 8 Source-drain voltage VSD Is=10A 1.20 V
  • Electronic Characteristics Parameter Symbol Condition Min. Typ Max. Unit Input capacitance Ciss f = 1MHz VDS=20V VGS=0V - 1137 - pF Output capacitance Coss - 84 - Reverse transfer capacitance Crss - 72 -
  • Gate Charge characteristics(Ta = 25℃) Parameter Symbol Condition Min. Typ Max. Unit Total gate charge Qg VDD = 20V ID = 8A VGS = 10V - 25 - nC Gate - Source charge Qgs - 3.6 - Gate - Drain charge Qgd - 4.4 - Note: ① Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% ; Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 2www.sztuofeng.com Feb 2021 V1.0 1.5 S - - - - TF130N04S

Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 3www.sztuofeng.com Feb 2021 V1.0 Test Circuit 1) E AS test Circuit 2) Gate charge test Circuit 3) Switch Time Test Circuit TF130N04S

Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 6www.sztuofeng.com Feb 2021 V1.0 Unit: mm SYMBOL min TYP max SYMBOL min max A 4.80 5.25 C 1.30 1.75 A1 0.37 0.49 C1 0.55 0.75 A2 1.27 C2 0.55 0.65 A3 0.41 C3 0.05 0.20 B1 3.80 4.10 D 1.05 B2 5.00 D1 0.40 0.62 SOP-8L TF130N04S