TF1216 TUOFENG | Alldatasheet

Document overview

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Technical content

RDS(ON TYP) 12mΩ @ VGS=-4.5V RDS(ON TYP) 16mΩ @ VGS=-2.5V

  • High power and current handing capability
  • Lead free product is acquired
  • Surface Mount Package

Description

  • Motor drive
  • Load switch
  • Power management Schematic diagram Marking and pin assignment DFN 2x2 top view Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -12 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous ID -16 A Drain Current-Pulsed IDM -50 A Maximum Power Dissipation PD 3.1 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient RθJA 16 /W℃ Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS=0V ID=-250μA -12 Zero Gate Voltage Drain Current I DSS V DS=-12V,VGS=0V - - -1 μA SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD www.sztuofeng.com 1 Oct 2020 V1.0 Y :year code W :week code TF1216 The TF1216 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
  • V DS = -12V,ID = -16A P-Channel Enhancement Mode Power MOSFET P-Channel Enhancement Mode Power MOSFET 1216 V - - note1 IGSS V DS =0V, VGS= μA ±12V - - ±100Gate to Body Leakage Current YWW D

www.sztuofeng.com 2 Electrical Characteristics (TJ=25℃ unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Units On Characteristics VGS(th) Gate Threshold Voltage V DS=VGS, ID= -250μA -0.4 -0.7 -1.0 V RDS(on) Static Drain-Source on-Resistance note2 mΩ Dynamic Characteristics Ciss Input Capacitance VDS= -6V, VGS=0V, f=1.0MHz - 2700 - pF Coss Output Capacitance - 680 - pF Crss Reverse Transfer Capacitance - 590 - pF Qg Total Gate Charge VGS= -4.5V - 35 - nC 5 - nC Qgd Gate-Drain(“Miller”) Charge - 10 - nC Switching Characteristics td(on) Turn-on Delay Time VGS= -4.5V, RGEN=2.5Ω - 11 - ns tr Turn-on Rise Time - 35 - ns td(off) Turn-off Delay Time - 30 - ns tf Turn-off Fall Time - 10 - ns Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain to Source Diode Forward Current - - -16 A VSD Drain to Source Diode Forward Voltage VGS=0V, IS= -16A - -0.8 -1.2 V Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD Oct 2020 V1.0 TF1216 P-Channel Enhancement Mode Power MOSFET ISM Maximum Pulsed Drain to Source Diode Forward Current - - -50 A Qgs Gate-Source Charge - VDS= -6V, ID= -6.7A, VDD = -6V, ID= -6.7A,

www.sztuofeng.com Test Circuit SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD Oct 2020 V1.0 TF1216 P-Channel Enhancement Mode Power MOSFET

www.sztuofeng.com Notes 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD Oct 2020 V1.0 TF1216 P-Channel Enhancement Mode Power MOSFET