TF110P03N TUOFENG | Alldatasheet

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  • Absolute Maximum Ratings （TC =25℃） Parameter Symbol Rating Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID@TC=25℃ -42 A ID@TC=75℃ -30 A ID @TC=100℃ -25 A Pulsed Drain Current ① IDM -96 A Total Power Dissipation② PD@TC=25℃ 35 W Total Power Dissipation PD@TA=25℃ 1.5 W Operating Junction Temperature T J -55 to 150 ℃ Storage Temperature TSTG -55 to 150 ℃
  • General Description The TF110P03N combines advanced trench MOSFETtechnology with a low resistance package toprovideextremely low RDS(ON).
  • Features Advance high cell density Trench technology Low RDS(ON) to minimize conductive loss Low Gate Charge for fast switching Low Thermal resistance
  • Application Load Switch PWM Appilication BLDC Motordriver
  • Product Summary VDS =-30V I D=-42A RDSON(-10V typ) =11mΩ RDSON(-4.5V typ) =14mΩ Part NO. TF110P03N Marking1 TF110P03N Marking2 TF:tuofeng; Y:year code; XX:Week; AA:device code; Basic ordering unit (pcs) 5000 TF110P03N Shenzhen Tuofeng Semiconductor Technology Co., Ltd P -CHANNEL ENHANCEMENT MODE POWER MOSFET 1www.sztuofeng.com Sep 2021 V1.0 D G S TF 110P03N AYXXA S GS S D DD D G SS S D DD D

Note: ① Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% ; ② Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate；

  • Thermal resistance Parameter Symbol Min. Typ. Max. Unit Thermal resistance, junction - case② RthJC - - 7.5 °C/W Thermal resistance, junction - ambient RthJA - - 65 °C/W Soldering temperature, wavesoldering for 8s Tsold - - 265 °C
  • Electronic Characteristics(Tj=25℃ ,unless otherwise notse) Parameter Symbol Condition Min. Typ Max. Unit Drain-Source Breakdown Voltage BVDSS VGS =0V, ID =-250uA -30 V Gate Threshold Voltage VGS(TH) VGS =V DS, ID =-250uA -1.0 -1.5 -2.0 V Drain-Source Leakage Current IDSS VDS=-28V, VGS =0V -1.0 uA Gate- Source Leakage Current IGSS VGS=±20V, VDS =0V ±100 nA Static Drain-source On Resistance RDS(ON) VGS=-4.5V, ID=-16A 11 15 mΩ VGS=-2.5V, ID=-10A 14 20 mΩ Forward Transconductance gFS VDS =-10V, ID=-10A 12 S Source-drain voltage VSD Is=-10A 1.00 V
  • Electronic Characteristics Parameter Symbol Condition Min. Typ Max. Unit Input capacitance Ciss f = 1MHz VDD = -15V VGS = 0V - 1716 - pF Output capacitance Coss - 226.9 - Reverse transfer capacitance Crss - 196.6 -
  • Gate Charge characteristics(Ta = 25℃) Parameter Symbol Condition Min. Typ Max. Unit Total gate charge Qg VDD = -15V ID = -15A VGS = -10V - 36.9 - nC Gate - Source charge Qgs - 6.17 - Gate - Drain charge Qgd - 5.97 - Shenzhen Tuofeng Semiconductor Technology Co., Ltd P -CHANNEL ENHANCEMENT MODE POWER MOSFET 2www.sztuofeng.com Sep 2021 V1.0 0.85 Body Diode Reverse Recovery Time Trr IF=15A, di/dt=100A/µ s 17 nS Body Diode Reverse Recovery Charge Qrr IF=15A, di/dt=100A/µ s 45 nC TF110P03N

Fig.1 Gate-Charge Characteristics Fig.2 Capacitance Characteristics Fig.3 Power Dissipation Derating Curve Fig.4 Typical output Characteristics Fig.5 Threshold Voltage V.S Junction Temperature Fig.6 Resistance V.S Drain Current 0 5 10 15 0.2 0.4 0.6 0.8 1.2 0 50 100 150 200 Power Dissipation Pd/Pd MAX.% Temperature (。C) 100 0 0.5 1 1.5 2 Drain Current (A) Drain-Source voltage (V) -1.0 -2.0 -50 50 150 Junction Temperature Vgs(th ) 0 25 Drain Current(A) ON Resistance VGS=-4.5V VGS=-10V VDS=-15V ID=-15A 4000 3000 2000 1000 900 700 500 300 100 0 10 20 30 Ciss Coss Crss Shenzhen Tuofeng Semiconductor Technology Co., Ltd P -CHANNEL ENHANCEMENT MODE POWER MOSFET 3www.sztuofeng.com Sep 2021 V1.0 TF110P03N

Fig.7 On-Resistance VS Gate Source Voltage Fig.8 On-Resistance V.S Junction Temperature Fig.9 Switching Time Measurement Circuit Fig.10 Gate Charge Waveform Fig.11 Avalanche Measurement Circuit Fig.12 Avalanche Waveform 2 4 6 VGS( V ) 8 10 RDson(mΩ) 0.5 1.5 -50 0 50 100 150 Normalized ON-Resistance Temperature Shenzhen Tuofeng Semiconductor Technology Co., Ltd P -CHANNEL ENHANCEMENT MODE POWER MOSFET 4www.sztuofeng.com Sep 2021 V1.0 TF110P03N

Shenzhen Tuofeng Semiconductor Technology Co., Ltd P -CHANNEL ENHANCEMENT MODE POWER MOSFET 5www.sztuofeng.com Sep 2021 V1.0 TF110P03N Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 0.900 1.000 0.035 0.039 A3 0.254REF. 0.010REF. D 4.944 5.096 0.195 0.201 E 5.974 6.126 0.235 0.241 D1 3.910 4.110 0.154 0.162 E1 3.375 3.575 0.133 0.141 D2 4.824 4.976 0.190 0.196 E2 5.674 5.826 0.223 0.229 k 1.190 1.390 0.047 0.055 b 0.350 0.450 0.014 0.018 e 1.270TYP. 0.050TYP. L 0.559 0.711 0.022 0.028 L1 0.424 0.576 0.017 0.023 H 0.574 0.726 0.023 0.029 θ 10° 12° 10° 12°