TF110P03M TUOFENG | Alldatasheet

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  • Absolute Maximum Ratings （TC =25℃） Parameter Symbol Rating Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID@TC=25℃ -32 A ID@TC=75℃ -23 A ID @TC=100℃ -19 A Pulsed Drain Current ① IDM -96 A Total Power Dissipation② PD@TC=25℃ 35 W Total Power Dissipation PD@TA=25℃ 1.5 W Operating Junction Temperature T J -55 to 150 ℃ Storage Temperature TSTG -55 to 150 ℃
  • General Description The TF110P03M combines advanced trench MOSFETtechnology with a low resistance package toprovideextremely low RDS(ON).
  • Features Advance high cell density Trench technology Low RDS(ON) to minimize conductive loss Low Gate Charge for fast switching Low Thermal resistance
  • Application Load Switch PWM Appilication BLDC Motordriver
  • Product Summary VDS =-30V I D=-32A RDSON(-10V typ) =11mΩ RDSON(-4.5V typ) =14mΩ Part NO. TF110P03M Marking1 TF110P03M Marking2 TF:tuofeng; Y:year code; XX:Week; AA:device code; Basic ordering unit (pcs) 5000 TF110P03M Shenzhen Tuofeng Semiconductor Technology Co., Ltd P -CHANNEL ENHANCEMENT MODE POWER MOSFET 1www.sztuofeng.com May 2021 V1.0 D G S TF 110P03M AYXXA S GS S D DD D G SS S D DD D

Note: ① Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% ; ② Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate；

  • Thermal resistance Parameter Symbol Min. Typ. Max. Unit Thermal resistance, junction - case② RthJC - - 7.5 °C/W Thermal resistance, junction - ambient RthJA - - 65 °C/W Soldering temperature, wavesoldering for 8s Tsold - - 265 °C
  • Electronic Characteristics(Tj=25℃ ,unless otherwise notse) Parameter Symbol Condition Min. Typ Max. Unit Drain-Source Breakdown Voltage BVDSS VGS =0V, ID =-250uA -30 V Gate Threshold Voltage VGS(TH) VGS =V DS, ID =-250uA -1.0 -1.5 -2.0 V Drain-Source Leakage Current IDSS VDS=-28V, VGS =0V -1.0 uA Gate- Source Leakage Current IGSS VGS=±20V, VDS =0V ±100 nA Static Drain-source On Resistance RDS(ON) VGS=-10V, ID=-16A 11 15 mΩ VGS=-4.5V, ID=-10A 14 20 mΩ Forward Transconductance gFS VDS =-10V, ID=-10A 12 S Source-drain voltage VSD Is=-10A 1.00 V
  • Electronic Characteristics Parameter Symbol Condition Min. Typ Max. Unit Input capacitance Ciss f = 1MHz VDD = -15V VGS = 0V - 1716 - pF Output capacitance Coss - 226.9 - Reverse transfer capacitance Crss - 196.6 -
  • Gate Charge characteristics(Ta = 25℃) Parameter Symbol Condition Min. Typ Max. Unit Total gate charge Qg VDD = -15V ID = -15A VGS = -10V - 36.9 - nC Gate - Source charge Qgs - 6.17 - Gate - Drain charge Qgd - 5.97 - Shenzhen Tuofeng Semiconductor Technology Co., Ltd P -CHANNEL ENHANCEMENT MODE POWER MOSFET 2www.sztuofeng.com May 2021 V1.0 0.85 Body Diode Reverse Recovery Time Trr IF=15A, di/dt=100A/µ s 17 nS Body Diode Reverse Recovery Charge Qrr IF=15A, di/dt=100A/µ s 45 nC TF110P03M

Fig.1 Gate-Charge Characteristics Fig.2 Capacitance Characteristics Fig.3 Power Dissipation Derating Curve Fig.4 Typical output Characteristics Fig.5 Threshold Voltage V.S Junction Temperature Fig.6 Resistance V.S Drain Current 0 5 10 15 0.2 0.4 0.6 0.8 1.2 0 50 100 150 200 Power Dissipation Pd/Pd MAX.% Temperature (。C) 100 0 0.5 1 1.5 2 Drain Current (A) Drain-Source voltage (V) -1.0 -2.0 -50 50 150 Junction Temperature Vgs(th ) 0 25 Drain Current(A) ON Resistance VGS=-4.5V VGS=-10V VDS=-15V ID=-15A 4000 3000 2000 1000 900 700 500 300 100 0 10 20 30 Ciss Coss Crss Shenzhen Tuofeng Semiconductor Technology Co., Ltd P -CHANNEL ENHANCEMENT MODE POWER MOSFET 3www.sztuofeng.com May 2021 V1.0 TF110P03M

Fig.7 On-Resistance VS Gate Source Voltage Fig.8 On-Resistance V.S Junction Temperature Fig.9 Switching Time Measurement Circuit Fig.10 Gate Charge Waveform Fig.11 Avalanche Measurement Circuit Fig.12 Avalanche Waveform 2 4 6 VGS( V ) 8 10 RDson(mΩ) 0.5 1.5 -50 0 50 100 150 Normalized ON-Resistance Temperature Shenzhen Tuofeng Semiconductor Technology Co., Ltd P -CHANNEL ENHANCEMENT MODE POWER MOSFET 4www.sztuofeng.com May 2021 V1.0 TF110P03M

Shenzhen Tuofeng Semiconductor Technology Co., Ltd P -CHANNEL ENHANCEMENT MODE POWER MOSFET 5www.sztuofeng.com May 2021 V1.0 Min. Max. Min. Max. A 0.650 0.850 0.026 0.033 D 2.900 3.100 0.114 0.122 D1 2.300 2.600 0.091 0.102 E 2.900 3.100 0.114 0.122 E1 3.150 3.450 0.124 0.136 E2 1.535 1.935 0.060 0.076 b 0.200 0.400 0.008 0.016 e 0.550 0.750 0.022 0.030 L 0.300 0.500 0.012 0.020 L1 0.180 0.480 0.007 0.019 H 0.315 0.515 0.012 0.020 θ 9° 13° 9° 13° 0~0.05 0~0.002 Symbol Dimensions In Millimeters Dimensions In Inches 0.152 REF. 0.006 REF. 0~0.100 0~0.004 0~0.100 0~0.004 TF110P03M