TF100N03 TUOFENG | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

Features

 30V , 100A RDSON (typ)= 2.9mΩ @ VGS =10V RDSON (typ)= 4.3mΩ @ VGS =4.5V  Advanced Trench Technology  Provide Excellent R DS(ON) and Low Gate Charge  Lead free product is acquired Application  Load Switch  PWM Application  Power management 100% UIS TESTED! 100% ΔVds TESTED! TO-252(DPAK) top view Marking and pin Assignment Schematic Diagram - 1 - TF100N03 Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET www.sztuofeng.com Package Marking and Ordering Information Device Marking Device OUTLINE Device Package Reel Size Reel (PCS) Per Carton (PCS) TF100N03 TAPING TO-252-4R 13inch 2500 25000 100N03 Feb 2022 V1.0 100N03 YXXAA

Electrical Characteristics (TJ=25℃ unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage V GS=0V, ID=250μA 30 - - V IDSS Zero Gate Voltage Drain Current V DS =30V, VGS = 0V, - - 1.0 μA IGSS Gate to Body Leakage Current V DS =0V, VGS = ±20V - - ±100 nA On Characteristics VGS(th) Gate Threshold Voltage V DS= VGS, ID=250μA 1.0 1.5 2.5 V RDS(on) Static Drain-Source on-Resistance note3 VGS =10V, ID =30A - 2.9 4 mΩ VGS =4.5V, ID =20A - 4.3 6.5 Dynamic Characteristics Ciss Input Capacitance VDS =15V, VGS =0V, f = 1.0MHz - 2680 - pF Coss Output Capacitance - 393 - pF Crss Reverse Transfer Capacitance - 330 - pF Qg Total Gate Charge VDS =15V, ID =30A, VGS =10V - 30 - nC Qgs Gate-Source Charge - 7.2 - nC Qgd Gate-Drain(“Miller”) Charge - 10.4 - nC Switching Characteristics td(on) Turn-on Delay Time VDS=15V, ID=30A, RGEN=3Ω, VGS =10V - 23 - ns tr Turn-on Rise Time - 28 - ns td(off) Turn-off Delay Time - 74 - ns tf Turn-off Fall Time - 36 - ns Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain to Source Diode Forward Current - - 100 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 400 A VSD Drain to Source Diode Forward Voltage VGS = 0V, IS=30A - - 1.2 V trr Body Diode Reverse Recovery Time IF=20A,dI/dt=100A/μs - 28 - ns Qrr Body Diode Reverse Recovery Charge - 21 - nC Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. EAS condition: TJ=25℃, VDD=20V, VG=10V, RG=25Ω, L=0.5Mh, IAS=22A 3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5% - 1 - TF100N03 Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET www.sztuofeng.com Feb 2022 V1.0

Figure1: Output Characteristics VDS(V) 0 1 2 3 4 5 6 100 VGS(V) Figure 2: Typical Transfer Characteristics ID (A) ID (A) 0 10 20 30 40 50 60 Figure 3: On-resistance vs. Drain Current RDS(ON) (mΩ) ID(A) 0 5 10 15 20 25 30 Figure 5: Gate Charge Characteristics Figure 4 : Body Diode Characteristics IS(A) VSD(V) 0 5 10 15 20 25 30 C(pF) VDS(V) Figure 6: Capacitance Characteristics Qg(nC) VGS(V) 100

1000 Coss

150℃ 125℃ Ciss VGS=2.5V 3.5V 100 1000 25℃ 25℃ 10V 10000 4.5V VGS=4.5V VGS=10V VDS=15V ID=30A - 1 - TF100N03 Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET www.sztuofeng.com Feb 2022 V1.0

Package Mechanical Data-TO-252 Dimensions Millimeters InchesRef. A B C D E G H L 2.10 0.66 0.40 2.50 0.10 0.86 0.60 0.083 0.026 0.016 0.098 0.004 0.034 0.024 6.40 9.50 10.70 0.374 0.421 0.053 0.065 5.90 6.30 0° 6° 0.232 0.248 6.80 0.252 0.268 4.47 4.67 0.176 0.184 1.09 1.21 0.043 0.048 1.35 1.65 0° 6° B2 5.18 5.48 0.202 0.216 C2 0.44 0.58 0.017 0.023 5.30REF 4.63 0.182 0.209REF E H B G L DETAIL A DETAIL A A C D TO-252 Reel Spectification-TO-252 W EF D0 P0 P2 T A A A A B B B B Dimensions Millimeters InchesRef. W E F T 15.90 1.65 7.40 1.40 16.10 1.85 7.60 1.60 0.626 0.065 0.291 0.055 0.634 0.073 0.299 0.063 1.40 1.60 7.90 10.45 10.60 0.411 0.417 0.24 0.27 0.009 0.011 0.055 0.063 3.90 4.10 6.90 0.271 10P0 0.154 0.161 8.10 0.311 0.319 1.90 2.10 0.075 0.083 0.10 0.004 40.00 1.575 2.78 0.109 Φ329 Φ13 16.00 1.75 7.50 1.50 1.50 4.00 8.00 2.00 10.50 0.630 0.069 0.295 0.059 0.059 0.157 0.315 0.079 0.413 6.85 7.00 2.68 2.88 0.270 0.276 0.105 0.113 39.80 40.20 1.567 1.583 - 1 - TF100N03 Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET www.sztuofeng.com Feb 2022 V1.0