TF030N02N TUOFENG | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

  • Ordering Information:
  • Absolute Maximum Ratings (Tj=25℃ ,unless otherwise notse) Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current ID@TC=25℃ 70 A ID@TC=75℃ 49 A ID @TC=100℃ 42 A Pulsed Drain Current ① IDM 210 A Total Power Dissipation② PD@TC=25℃ 35 W Total Power Dissipation PD@TA=25℃ 1.5 W Operating Junction Temperature T J -55 to 150 ℃ Storage Temperature TSTG -55 to 150 ℃
  • General Description The TF030N02N combines advanced trench MOSFET technology with a low resistance package toprovideextremely low RDS(ON).
  • Features Advance high cell density Trench technology Low RDS(ON) to minimize conductive loss Low Gate Charge for fast switching Low Thermal resistance
  • Application MB/VGA Vcore SMPS 2nd Synchronous Rectifier POL application BLDC Motor driver
  • Product Summary VDS =20V I D=70A RDSON(4.5V typ)=3.0mΩ RDSON(2.5V typ)=3.9mΩ Part NO. TF030N02N Marking1 030N02N:TF030N02N Marking2 TF:tuofeng; Y:year code; X:Week; AA:device code; Basic ordering unit (pcs) 5000 TF030N02N Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 1www.sztuofeng.com Sep 2021 V1.0 D G S S GS S D DD D G SS S D DD D TF 030N02N AYXA
  • Thermal resistance Parameter Symbol Min. Typ. Max. Unit Thermal resistance, junction - case② RthJC - - 2.6 °C/W Thermal resistance, junction - ambient RthJA - - 53 °C/W Soldering temperature, wavesoldering for 8s Tsold - - 265 °C
  • Electronic Characteristics(Tj=25℃ ,unless otherwise notse) Parameter Symbol Condition Min. Typ Max. Unit Drain-Source Breakdown Voltage BVDSS VGS =0V, ID =250uA 20 V Gate Threshold Voltage VGS(TH) VGS =V DS, ID =250uA 0.5 0.7 1.2 V Drain-Source Leakage Current IDSS VDS=20V, VGS =0V 1.0 uA Gate- Source Leakage Current IGSS VGS=±12V, VDS =0V ±100 nA Static Drain-source On Resistance RDS(ON) VGS=4.5V, ID=20A 3.0 4.0 mΩ VGS=2.5V, ID=15A 3.9 5.0 mΩ Forward Transconductance gFS VDS =10V, ID=20A 10 S Source-drain voltage VSD Is=20A 1.00 V
  • Electronic Characteristics Parameter Symbol Condition Min. Typ Max. Unit Input capacitance Ciss VDD =10V f = 1MHz VGS = 0V - 3735 - pF Output capacitance Coss - 369.1 - Reverse transfer capacitance Crss - 295.6 -
  • Gate Charge characteristics(Tj=25℃ ,unless otherwise notse) Parameter Symbol Condition Min. Typ Max. Unit Total gate charge Qg VDD =10V ID = 15A VGS = 4.5V - 34.5 - nC Gate - Source charge Qgs - 5.76 - Gate - Drain charge Qgd - 6.66 - Note: ① Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% ; ② Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate； Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 2www.sztuofeng.com Sep 2021 V1.0 0.80 TF030N02N

Fig.1 Gate-Charge Characteristics Fig.2 Capacitance Characteristics Fig.3 Power Dissipation Derating Curve Fig.4 Typical output Characteristics Fig.5 Threshold Voltage V.S Junction Temperature Fig.6 Resistance V.S Drain Current 0 5 10 15 0.2 0.4 0.6 0.8 1.2 0 50 100 150 200 Power Dissipation Pd/Pd MAX.% Temperature (。C) 0 0.5 1 1.5 2 Drain Current (A) Drain-Source voltage (V) 0.5 -50 50 150 Vgs(th ) Junction Temperature 0 5 Drain Current(A) ON Resistance VGS=2.5V VGS=4.5V VDS=10V ID=20A 6000 5000 4000 3000 2000 500 400 300 200 0 10 20 30 Ciss Coss Crss Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 3www.sztuofeng.com Sep 2021 V1.0 TF030N02N

Fig.7 On-Resistance VS Gate Source Voltage Fig.8 On-Resistance V.S Junction Temperature Fig.9 Switching Time Measurement Circuit Fig.10 Gate Charge Waveform Fig.11 Avalanche Measurement Circuit Fig.12 Avalanche Waveform 2 3 4 VGS( V ) 5 6 RDson(mΩ) 0.5 1.5 -50 0 50 100 150 Normalized ON-Resistance Temperature Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 4www.sztuofeng.com Sep 2021 V1.0 TF030N02N

Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 5www.sztuofeng.com Sep 2021 V1.0 Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 0.900 1.000 0.035 0.039 A3 0.254REF. 0.010REF. D 4.944 5.096 0.195 0.201 E 5.974 6.126 0.235 0.241 D1 3.910 4.110 0.154 0.162 E1 3.375 3.575 0.133 0.141 D2 4.824 4.976 0.190 0.196 E2 5.674 5.826 0.223 0.229 k 1.190 1.390 0.047 0.055 b 0.350 0.450 0.014 0.018 e 1.270TYP. 0.050TYP. L 0.559 0.711 0.022 0.028 L1 0.424 0.576 0.017 0.023 H 0.574 0.726 0.023 0.029 θ 10° 12° 10° 12° TF030N02N